不同重力取向对金刚石薄膜生长的影响

本文采用热丝ＣＶＤ方法在不同方向的Ｓｉ衬底上生长金刚石薄膜。研究了金刚石薄膜的生长特性以及不同重力取向对金刚石薄膜成核密度、生长速度和晶体品质的影响。通过激光喇曼光谱、原子力显微镜（ＡＦＭ）、扫描电镜（ＳＥＭ）等测试得出：不同重力取向生长的金刚石薄膜成核密度和生长速度表现出明显的差别。     

衬底温度对合成金刚石薄膜的影响

本文利用热丝化学气相沉积方法对不同温度下生长的金刚石薄膜样品进行了表征分析。通过扫描电镜照片分析,从成核理论方面得出了金刚石薄膜生长的最优化温度。     

衬底温度对合成金刚石薄膜的影响

本文利用热丝化学气相沉积方法对不同温度下生长的金刚石薄膜样品进行了表征分析。通过扫描电镜照片分析,从成核理论方面得出了金刚石薄膜生长的最优化温度。     

汽相生长金刚石微粒及金刚石薄膜分析

用化学汽相沉积法已长出金刚石微粒及金刚石薄膜,并对它进行了扫描电镜观查,X-射线衍射分析,喇曼光谱分析,硬度测试,证明它确是金刚石并具有金刚石的性能.     

沉淀法合成纳米CeO2及其性能

以Ce(NO3)3·6H2O为铈源,(NH-4)2CO3·H2O为沉淀剂,并加入少量PEG4000作为分散剂,采用液相沉淀法制备前驱体Ce2(CO3)3·H2O,前驱体经热处理合成了纳米CeO2.通过XRD,DTA/TG,TEM,BET及杂质含量分析,并根据XRD线宽法,按Scherrer公式计算平均晶粒尺寸,结合相对密度的测定研究了在不同热处理温度下纳米CeO2性能的变化.结果表明前驱体经300℃焙烧1 h已完全形成CeO2,属于立方晶系,空间群为Fm3m,原生晶粒粒径为5 nm左右,颗粒粒径为20 nm左右,比表面积达140.61 m2/g,孔径分布为5～15 nm,孔径峰值为9.3 nm,纯度≥99.97%;随焙烧温度提高,将引起CeO2晶粒尺寸和相对密度显著增大,比表面积减少.     

利用MOCVD在Si衬底上制备立方相Mg0.25Zn0.75O薄膜及日盲探测器

采用金属有机化学气相沉积（MOCVD）方法在Si衬底上实现了立方结构的Mg0.25Zn0.75O薄膜生长.在此基础上,实现了Mg0.25Zn0.75 O/n-Si异质结型日盲紫外探测器.该探测器在-5V偏压下,器件暗电流为0.02 mA.在0V偏压下的峰值响应位于大约280 nm处,响应度为1.2 mA/W.     

钯镍合金纳米粒子包覆碳纤维氢敏感材料的制备及性能

采用Symbolm0.5 V的沉积电位在碳纤维基底上沉积出尺寸可控的含镍8.5% Pd -Ni合金纳米粒子,可用于传感氢气.钯镍合金纳米粒子的尺寸对传感器的性能有影响,180 nm的钯镍合金纳米粒子的氢敏感性能好,在0~6%的氢环境中,其响应电流随浓度的增大而增加,在氢气体积分数为6%的氢气中,灵敏度可达38.35%.     

钛盐水解制备纳米TiO2粉末的研究

以Ti(SO4)2水溶液为前驱体,NH3·H2O为沉淀剂,十二烷基苯磺酸钠(DBS)为表面活性剂,采用常温水解沉淀法制备出了纳米TiO2粉体.用XRD测试粉体的晶相组成;用TEM分析粉末的晶体形貌.研究了溶液的pH值、表面活性剂、煅烧温度等对纳米TiO2颗粒尺寸的影响.结果表明:当溶液pH值为2.0～4.0,分散剂质量分数为1.5%时,水解得到的TiO2晶粒尺寸在10～20nm之间.研究烧结过程中晶粒的变化时发现:在煅烧过程中由于DBS的包覆有效地抑制了晶粒的长大.     

纳米SiO2/聚丙烯复合材料研究

通过熔融共混法制备了纳米二氧化硅(SiO2)/聚丙烯(PP)复合材料,利用热重分析研究了纳米二氧化硅对聚丙烯的热稳定性影响,并采用示差扫描量热法研究了PP及其复合材料的非等温结晶动力学.结果表明,纳米SiO2提高了聚丙烯的热稳定性,起到异相成核的作用,使PP的结晶峰温升高、活化能增大.     

纳米SiO_2/聚丙烯复合材料研究

通过熔融共混法制备了纳米二氧化硅(SiO2)/聚丙烯(PP)复合材料,利用热重分析研究了纳米二氧化硅对聚丙烯的热稳定性影响,并采用示差扫描量热法研究了PP及其复合材料的非等温结晶动力学.结果表明,纳米SiO2提高了聚丙烯的热稳定性,起到异相成核的作用,使PP的结晶峰温升高、活化能增大.     

DLC涂层硬质合金微钻的制备及其切削性能

在硬质合金微型刀具加工高硅铝合金等难加工材料时,通过采用改进的热丝CVD装置开展了DLC涂层硬质合金微钻制备工艺优化,得到了最优沉积工艺,并配合高速加工高硅铝合金(Si15%)材料微小孔钻削性能对比试验,分析了刀具的磨损机理.结果表明:两步预处理方法适合复杂形状硬质合金衬底的预处理方法.钻削高硅铝合金时,DLC涂层具有低摩擦系数和高耐磨损特性,同等切削条件下,涂层微钻的切削寿命比未涂层硬质合金微钻提高了10倍.     

Laser method for synthesis and processing of continuous diamond films on nondiamond substrates

A laser method based upon carbon ion implantation and pulsed laser melting of copper has been used to produce continuous diamond thin film. Carbon ions were implanted with ion energies in the range of 60 to 120 keV, and doses of 1.0 x 10(18) to 2.0 x 10(18) ions cm(-2). The ion-implanted specimens were treated with nanosecond excimer laser pulses with the following parameters: energy density, 3.0 to 5.0 J cm(-2); wavelength, 0.308 microm; pulse width, 45 nanoseconds. The specimens were characterized with scanning electron microscopy (SEM), x-ray diffraction, Rutherford backscattering/ion channeling, Auger, and Raman spectroscopy. The macroscopic Raman spectra contained a strong peak at 1332 cm(-1) with full width at half maximum of 5 cm(-1), which is very close to the quality of the spectra obtained from single-crystal diamond. The selected area electron diffraction patterns and imaging confirmed the films to be defect-free single crystal over large areas of up to several square micrometers with no grain boundaries. Low voltage SEM imaging of surface features indicated the film to be continuous with presence of growth steps.     

农村电网自动稳压技术的研究

经技术改造,农网电压质量有所提高,但波动范围仍然超出国家规定允许值,制约农村经济的发展.文章研究一种基于固态继电器的采用对农网配变电压器调压绕组正反串联,实现稳定农村电网电压目的的无触点有载调压分接开关的接线及其控制方式.理论分析与模拟实验表明,这种稳压技术具有调压范围大,元件实际承受电压低,结构简单的优点,适用于农村电网     

The mechanism of diamond nucleation from energetic species

A model for diamond nucleation by energetic species (for example, bias-enhanced nucleation) is proposed. It involves spontaneous bulk nucleation of a diamond embryo cluster in a dense, amorphous carbon hydrogenated matrix; stabilization of the cluster by favorable boundary conditions of nucleation sites and hydrogen termination; and ion bombardment-induced growth through a preferential displacement mechanism. The model is substantiated by density functional tight-binding molecular dynamics simulations and an experimental study of the structure of bias-enhanced and ion beam-nucleated films. The model is also applicable to the nucleation of other materials by energetic species, such as cubic boron nitride.     

Microstructural optimization of a zeolite membrane for organic vapor separation

A seeded growth method for the fabrication of high-permeance, high-separation-factor zeolite (siliceous ZSM-5, [Si96O192]-MFI) membranes is reported. The method consists of growing the crystals of an oriented seed layer to a well-intergrown film by avoiding events that lead to a loss of preferred orientation, such as twin overgrowths and random nucleation. Organic polycations are used as zeolite crystal shape modifiers to enhance relative growth rates along the desirable out-of-plane direction. The polycrystalline films are thin (approximately 1 micrometer) with single grains extending along the film thickness and with large in-plane grain size (approximately 1 micrometer). The preferred orientation is such that straight channels with an open diameter of approximately 5.5 angstroms run down the membrane thickness. Comparison with previously reported membranes shows that these microstructurally optimized films have superior performance for the separation of organic mixtures with components that have small differences in size and shape, such as xylene isomers.     

A nucleation site and mechanism leading to epitaxial growth of diamond films

A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor deposition (CVD) is identified in high-resolution transmission electron microscopic images. Other sites in the same sample leading to polycrystalline growth, but deleterious to epitaxial CVD growth, are also described. A mechanism for the heteroepitaxial growth of diamond is suggested, in which etching of the nondiamond carbon binder exposes and removes nonadherent nanodiamond nuclei, leaving intact only those directly nucleated on the silicon substrate. This work enhances our understanding of diamond nucleation and heteroepitaxial growth and its potential applications.     

Three-dimensional hydrogen microscopy in diamond

A microprobe of protons with an energy of 17 million electron volts is used to quantitatively image three-dimensional hydrogen distributions at a lateral resolution better than 1 micrometer with high sensitivity. Hydrogen images of a <110>-textured undoped polycrystalline diamond film show that most of the hydrogen is located at grain boundaries. The average amount of hydrogen atoms along the grain boundaries is (8.1 +/- 1.5) x 10(14) per square centimeter, corresponding to about a third of a monolayer. The hydrogen content within the grain is below the experimental sensitivity of 1.4 x 10(16) atoms per cubic centimeter (0.08 atomic parts per million). The data prove a low hydrogen content within chemical vapor deposition-grown diamond and the importance of hydrogen at grain boundaries, for example, with respect to electronic properties of polycrystalline diamond.     

Polycrystalline CVD Diamond Films with High Electrical Mobility

Advances in the deposition process have led to dramatic improvements in the electronic properties of polycrystalline diamond films produced by chemical vapor deposition (CVD). It is now possible to produce CVD diamond with properties approaching those of IIa natural diamonds. The combined electron-hole mobility, as measured by transient photoconductivity at low carrier density, is 4000 square centimeters per volt per second at an electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds. Carrier lifetimes measured under the same conditions are 150 picoseconds for the CVD diamond and 300 picoseconds for single-crystal diamond. The collection distance at a field of 10 kilovolts per centimeter is 15 micrometers for the CVD diamond as compared to 30 micrometers for natural diamonds. The electrical qualities appear to correlate with the width of the diamond Raman peak. Also, although the collection distance at the highest fields in the films nearly equals the average grain size, there is no evidence of deleterious grain boundary effects.     

Grain nucleation and growth during phase transformations

The mechanical properties of polycrystalline materials are largely determined by the kinetics of the phase transformations during the production process. Progress in x-ray diffraction instrumentation at synchrotron sources has created an opportunity to study the transformation kinetics at the level of individual grains. Our measurements show that the activation energy for grain nucleation is at least two orders of magnitude smaller than that predicted by thermodynamic models. The observed growth curves of the newly formed grains confirm the parabolic growth model but also show three fundamentally different types of growth. Insight into the grain nucleation and growth mechanisms during phase transformations contributes to the development of materials with optimal mechanical properties.     

Epitaxial growth of diamond films on si(111) at room temperature by mass-selected low-energy c+ beams

Diamond films ( approximately 0.7 micrometer thick) have been epitaxially grown on Si(111) substrates at room temperature with mass-selected 120-electronvolt C(+) ions. The diamond reflections observed in x-ray diffraction are well localized at their predicted positions, indicating that (i) the diamond(111) and (220) planes are parallel to the Si(111) and (220), respectively; (ii) the diamond rotational spread around its (111) normal is approximately 1.7 degrees ; and (iii) the mosaic block size is approximately 150 A. The film growth is discussed in terms of subplantation-a shallow subsurface implantation model. This discovery is an important step toward diamond semiconductor devices.