Studies on pH and Nitrate Checkers Made of Semiconductor Devices for Acid Rain Monitoring |
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Authors: | Shin-Ichi Wakida Masataka Yamane Sahori Takeda Zyun Siroma Yutaka Tsujimura Jianhua Liu |
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Affiliation: | 1. Osaka National Research Institute, AIST, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan 2. Beijing University of Aeronautics and Astronautics, Beijing, 100083, P. R. China
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Abstract: | Ion-selective field-effect transistors (ISFETs), which are integrated devices for ion-selective electrodes using solid-state microelectronics technology, have attracted much attention for convenient monitoring of acid rain, since conventional analytical procedures are time-consuming. In this paper, some recent results of studies on pH and nitrate checkers made of ISFETs using new sensing materials and their application to samples of acid rain are described. A new pH-sensitive film, TiN was deposited onto the gate of ISFET device using RF plasma-enhanced CVD method. The plasma was generated in a mixture of TiCl4, N2 and H2 gases. The prepared pH-ISFETs showed a linear response and the almost theoretical slope sensitivity of 59 mV per pH change with a rapid response of less than 10 seconds. We have obtained fairly good agreement with the pH values using conventional pH glass electrode. A prototype nitrate-checker was prepared with casting newly designed nitrate-sensing materials, plasticizers and PVC based tetrahydrofuran solution onto the ISFET device. We have obtained good agreement with the values using conventional ion-chromatography at mg L?1 level. |
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