紫外-氯化锂复合诱变选育泰妙菌素高产菌株

对泰妙菌素生产菌TMⅡ09-003经紫外线（UV）照射180 s后,将菌悬液均匀地涂布于加有0.8%的氯化锂平板上,在避光条件下于温度26℃～27℃、相对湿度60%～65%的环境下培养13～14 d后,挑取单菌落,进行初筛、复筛,用HPLC法测定含量。结果表明,UV照射180 s后,氯化锂加量为0.8%剂量对菌株的致死率为88.6%。对该剂量处理获得的诱变菌株进行了筛选,最终获得4支高产菌株,分别为TMⅡ09-236、TMⅡ09-253、TMⅡ09-441和TMⅡ09-447。

UV-LiCI Complex Mutation for Breeding Superior Strain of Tiamulin

Irradiated by ultraviolet（UV） for 180 s,bacterial suspension of Streptomyces strain TMⅡ 09-003 was uniformly coated on the plates containing 0.8% of lithium chloride.Cultured for 13 to 14 days in dark conditions at the temperature of 26℃～27℃ and relative humidity of 60%～65%,single colonies were picked,primary and secondary assays were made.Content was determined by HPLC method.The results showed that after UV irradiation for 180 s and the 0.8% dose of lithium chloride the lethality rate of strain was 88.6%.The mutant strains were screened and ultimately four high-producing strains were obtained such as TM Ⅱ 09-236,TM Ⅱ 09-253,TM Ⅱ 09-441 and TM Ⅱ 09-447.