Tunable quasi-two-dimensional electron gases in oxide heterostructures |
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Authors: | Thiel S Hammerl G Schmehl A Schneider C W Mannhart J |
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Institution: | Experimental Physics VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany. |
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Abstract: | We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high-electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state. |
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