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Wafer-scale graphene integrated circuit
Authors:Lin Yu-Ming  Valdes-Garcia Alberto  Han Shu-Jen  Farmer Damon B  Meric Inanc  Sun Yanning  Wu Yanqing  Dimitrakopoulos Christos  Grill Alfred  Avouris Phaedon  Jenkins Keith A
Affiliation:IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com
Abstract:A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
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