| Abstract: | The systematic error of resistance strain sensor is caused by strain transmission error that differs with different parameters of the sensitive gate structure in the measurement process. The paper establishes a measure model that is made up with a cantilever beam(the measured matrix),the binder and some strain wires, then studies the influence of different sensitive gate structure parameters on the measurement result using finite element method(FEM)and the effectiveness of FEM is validated by a comparison with experimental results at the end. The results of the FEM analysis show that in the matrix strain passing the gate length and the gate spacing have intermediate optimal values,and that the smaller the grid diameter is,the smaller the strain transmission error becomes. Besides,the relative errors corresponding to different structural parameters are also given based on the FEM analysis,which provide effective reference for the selection of structural parameters and the appropriate error compensation in the process of measurement. |
