Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure |
| |
Authors: | Kubota Yoichi Watanabe Kenji Tsuda Osamu Taniguchi Takashi |
| |
Affiliation: | National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan. kubota.yoichi@nims.go.jp |
| |
Abstract: | Materials emitting light in the deep ultraviolet region around 200 nanometers are essential in a wide-range of applications, such as information storage technology, environmental protection, and medical treatment. Hexagonal boron nitride (hBN), which was recently found to be a promising deep ultraviolet light emitter, has traditionally been synthesized under high pressure and at high temperature. We successfully synthesized high-purity hBN crystals at atmospheric pressure by using a nickel-molybdenum solvent. The obtained hBN crystals emitted intense 215-nanometer luminescence at room temperature. This study demonstrates an easier way to grow high-quality hBN crystals, through their liquid-phase deposition on a substrate at atmospheric pressure. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|