首页 | 本学科首页   官方微博 | 高级检索  
     

K+对低温胁迫下紫椴叶片生理指标的影响
引用本文:王恩姮,陈祥伟,杨金英. K+对低温胁迫下紫椴叶片生理指标的影响[J]. 东北林业大学学报, 2007, 35(3): 1-2
作者姓名:王恩姮  陈祥伟  杨金英
作者单位:1. 东北林业大学,哈尔滨,150040
2. 沈阳炮兵学院
基金项目:黑龙江省重大攻关课题(GA02B601)资助
摘    要:采用质量分数分别为50%、100%、150%、200%和250%的K 溶液处理2年生紫椴幼苗,在(-10±1)℃低温条件下分别处理2、4、6、8、10h,测定和分析其质膜相对透性、丙二醛(MDA)、可溶性糖及游离脯氨酸含量的变化,旨在探讨提高紫椴抗寒性的钾的最佳浓度范围。研究结果表明:不同质量分数的K 处理对紫椴幼苗叶片的MDA和游离脯氨酸的含量无规律性影响,但对相对电导率和可溶性糖含量产生了明显的调节作用,提高了紫椴幼苗对低温胁迫的抗性。可以认为,质量分数为250%的K 对紫椴抵抗低温胁迫的效果最佳。

关 键 词:紫椴  低温  胁迫  K   生理指标
修稿时间:2006-09-23

Effect of K + Concentration on Physiological Indexes of Tilia amurens under Low Temperature Stress
Wang Enheng,Chen Xiangwei,Yang Jinying. Effect of K + Concentration on Physiological Indexes of Tilia amurens under Low Temperature Stress[J]. Journal of Northeast Forestry University, 2007, 35(3): 1-2
Authors:Wang Enheng  Chen Xiangwei  Yang Jinying
Affiliation:1.Forestry College of Northeast Forestry University, Harbin 150040, P. R. China; Shenyang Artillery College
Abstract:2-year-old Tilia amurens seedlings were treated with different concentrations of kalium ion (50%, 100%, 150%, 200%, 250%) aiming to approach the optimal concentration range for improving the cold resistance of seedlings. The changes of different physiological indexes of T. amurens seedlings, such as the relative osmosis of protoplasm membrane, contents of MAD, soluble sugar and dissociative proline, were detected under low temperature conditions (around -10 degree C) after 2,4,6,8 and 10 hours of treatment, respectively. Results show that the contents of MDA and dissociative proline exhibit irregular changes, while the relative osmosis of protoplasm membrane and the content of soluble sugar present significant variations under different K treatments, which demonstrates that the resistance of T. amurens seedlings to low temperature stress is improved. The seedlings treated with K at a concentration of 250% have high cold-resistances.
Keywords:Tilia amurens  Low temperature stress  K   Physiological indexes
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号