Breaking the speed limits of phase-change memory |
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Authors: | Loke D Lee T H Wang W J Shi L P Zhao R Yeo Y C Chong T C Elliott S R |
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Institution: | Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore. |
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Abstract: | Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates. |
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