首页 | 本学科首页   官方微博 | 高级检索  
     


Ultrastructural changes of corpus luteum after ovarian stimulation at implantation period
Authors:Beigi Boroujeni Mandana  Beigi Boroujeni Nasim  Salehnia Mojdeh  Marandi Elahe  Beigi Boroujeni Masoud
Affiliation:Dept. of Anatomical Sciences, School of Medicine, Lorestan University of Medical Sciences, Khorramabad, Iran. mandbe2000@yahoo.com
Abstract:Background: To achieve multiple oocytes for in vitro fertilization, ovulation induction is induced by gonadotropins; however, it has several effects on oocytes and embryo quality and endometrium receptivity. The aim of this study was to assess ultrastructural changes of corpus luteum after ovarian induction using human menopausal gonadotropin (HMG) and human chorionic gonadotropin (HCG) during luteal phase at implantation period. Methods: Female NMRI mice (6-8 weeks) were divided into control and stimulated groups. In the control group, the mice were rendered pseudopregnant and in the ovarian induction group, the mice were rendered pseudopregnant after the ovarian induction. The samples were obtained from the ovary in each group at the same time during luteal phase at implantation period. Ultrastructural changes were assessed using electron microscopy study. Results: Our results displayed some identifiable changes in ultrastructure of corpus luteum in ovarian induction group. These changes included enhancement of the apoptosis and intercellular space, whereas the angiogenesis was decreased. The findings indicated a decline in organelle density in the cytoplasm of ovarian induction, such as mitochondria, endoplasmic reticulum and polyribosome. Furthermore, chromatin condensation of nuclei was observed in some cells. Conclusion: The ovarian induction using HMG and HCG resulted in some ultrastructural changes on the corpus luteum at implantation period, which could affect on the pregnancy rate.Key Words: Corpus luteum, Luteal phase, Ultrastructure, Ovarian induction
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号