A Silicon Solution for Gallium Arsenide IC's: Epitaxial growth of crystalline gallium arsenide layers on silicon wafers could combine the best properties of both semiconductors in future high-speed microelectronic chips期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

A Silicon Solution for Gallium Arsenide IC's: Epitaxial growth of crystalline gallium arsenide layers on silicon wafers could combine the best properties of both semiconductors in future high-speed microelectronic chips

Authors:	Robinson A L

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