| 浅谈减少击穿现象 |
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| 引用本文： | 王洪媛,李雪莲,陈新欣,李志华. 浅谈减少击穿现象[J]. 湖南农机, 2012, 39(3): 250+252 |
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| 作者姓名： | 王洪媛 李雪莲 陈新欣 李志华 |
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| 作者单位： | 天津市引滦工程尔王庄管理处,天津,301802 |
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| 摘 要： | 现实中工程师设计降压转换器时经常忽视“击穿”的问题,文章结合实际经验分析总结,对“击穿”现象提出了几点改造意见,经过实践效果很好,总结在此予以交流共享.
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| 关 键 词： | 击穿 MOSFET 驱动器芯片 |
Talking about reducing the breakdown phenomenon |
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| WANG Hong-yuan , LI Xue-lian , CHEN Xin-xin , LI Zhi-hua. Talking about reducing the breakdown phenomenon[J]. Hunnan Agricultural Machinery, 2012, 39(3): 250+252 |
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| Authors: | WANG Hong-yuan LI Xue-lian CHEN Xin-xin LI Zhi-hua |
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| Affiliation: | (Luan River Project Erwangzhuang Management Office,Tianjin 301802,China) |
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| Abstract: | The reality of the engineer to design the step-down converter is often overlooked "breakdown" of the problem,we analyzed and summarized,combined with practical experience and some transformation of the views of the " breakdown" phenomenon,after practice,the effect of good,to be summarized in this exchange and sharing. |
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| Keywords: | breakdown the MOSFET driver chip |
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