首页 | 本学科首页   官方微博 | 高级检索  
     

乙烯利浸种对甘蔗根系多胺含量和叶片水势的影响
引用本文:王威豪,叶燕萍,李杨瑞. 乙烯利浸种对甘蔗根系多胺含量和叶片水势的影响[J]. 干旱地区农业研究, 2008, 26(1): 200-204
作者姓名:王威豪  叶燕萍  李杨瑞
作者单位:广西大学农学院,广西,南宁,530005;广西农业科学院,广西,南宁,530007;广西大学农学院,广西,南宁,530005
基金项目:广西大学博士启动基金项目(X071040)
摘    要:采用3种浓度乙烯利溶液(0、100、200 mg/L)分别对甘蔗新台糖22号(ROC22)、桂糖17号(GT17)和新台糖10号(ROC10)在下种前进行10 min浸种处理,测定根系中的多胺含量、多胺氧化酶活性、叶片水势及土壤含水量的变化。结果发现,在水分胁迫条件下蔗根精胺(Spm)、亚精胺(Spd)、腐胺(Put)大量积累,100、200 mg/L乙烯利浸种处理的ROC22和ROC10蔗根有较高的多胺含量(Spm、Spd、Put),而GT17则有较低的值,并且都有较低的多胺氧化酶活性;同时100、200 mg/L乙烯利浸种处理减缓水分胁迫时蔗叶组织水势的下降程度,尤以200mg/L乙烯利处理效果最好。试验表明乙烯利浸种可提高甘蔗品种的抗旱性。

关 键 词:水分胁迫  乙烯利  甘蔗  多胺  水势
文章编号:1000-7601(2008)01-0200-05
收稿时间:2007-03-14
修稿时间:2007-03-14

Effects of soaking seed in ethephon solution on solyamine content in sugarcane roots and water potential in sugarcane leaves
WANG Weihao,YE Yangping,LI Yangrui. Effects of soaking seed in ethephon solution on solyamine content in sugarcane roots and water potential in sugarcane leaves[J]. Agricultural Research in the Arid Areas, 2008, 26(1): 200-204
Authors:WANG Weihao  YE Yangping  LI Yangrui
Abstract:The seed canes of three sugarcane varieties i.e.ROC22,GT17 and ROC10 were soaked in ethephon solutions with three concentrations of 0,100,200 mg/L,respectively,for 10 min before planting.Much more Spm,Spd and Put were accumulated in the roots of sugarcane under water stress.For both 100 mg/L and 200 mg/L ethephon treatments,much higher contents of Spm,Spd and Put were found in the roots of ROC22 and ROC10 than that of GT17.Besides,lower activity of PAO was found in the roots for all the ethephon treatments.The 100 mg/L and 200 mg/L ethephon treatments could also improve the drop of water potential in the leaves.The best effect was found in the 200 mg/L ethephon treatment.The results suggested that the ethephon treatment could increase the drought resistance of sugarcane.
Keywords:water stress  ethephon  sugarcane  polyamine  water potential
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《干旱地区农业研究》浏览原始摘要信息
点击此处可从《干旱地区农业研究》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号