高压4H-SiC 肖特基二极管的模拟及研制

结终端技术能提高4H-SiC肖特基势垒二极管器件的耐压性能.利用仿真软件ISE-TCAD10.0对具有结终端扩展JTE保护的4H-SiC SBD器件进行了仿真研究，并依据仿真优化好的参数试制了器件.实验测试结果表明，模拟优化结果与实验测试器件的结果一致性较好，实测此器件的反向电压值达2 000 V，接近理想击穿耐压88%，漏电流数值为0.1 mA/cm.

Simulation and Fabrication of High-voltage 4H-SiC Schottky Barrier Diode with Junction Termination Extension

Junction termination technique is quite necessary in the improvement of the breakdown voltage of a high-voltage 4H-SiC Schottky barrier diode (SBD).The 4H-SiC SBD with junction termination extension (JTE) was simulated with a two-dimensional device simulator ISE-TCAD10.0, and the 4H-SiC SBD with JTE was fabricated according to the simulation optimal parameters. Through experiment verification, a good consistency between simulation and experiment was observed. The ideal breakdown voltage was 2 000 V, which achieved more than 88 percent of the ideal parallel plane junction breakdown voltage, and the leakage current density was as low as 0.1 mA/cm.