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Analysis of the Damage Electric Field Strengths for Several Ultraviolet Thin Film Materials
作者姓名:HU Jiang-chuan  WANG Wan-lu  MA Ping  CHEN Song-ling
摘    要:The laser induce damage threshold electric field instensity strengths of different materials used in the ultraviolet region, have been calculated by the model of multiphoton absorption ionization, avalanche model and a combination of the two. Avalanche model can not be used in the ultraviolet region, the result of the combination model can be used as reference. The authors analyze the relations between the laser induce damage electric field strengths to optical thin film and laser frequency, pulse duration. The relations between materials band gap and damage threshold electric field strengths is analyzed.

关 键 词:optical  thin  films    damage  threshold  electric  field  instensity    ultraviolet
收稿时间:2005/4/16 0:00:00
修稿时间:2005/4/16 0:00:00

Analysis of the Damage Electric Field Strengths for Several Ultraviolet Thin Film Materials
HU Jiang-chuan,WANG Wan-lu,MA Ping,CHEN Song-ling.Analysis of the Damage Electric Field Strengths for Several Ultraviolet Thin Film Materials[J].Storage & Process,2005(8):89-91116.
Authors:HU Jiang-chuan  WANG Wan-lu  MA Ping  CHEN Song-ling
Abstract:The laser induce damage threshold electric field instensity strengths of different materials used in the ultraviolet region, have been calculated by the model of multiphoton absorption ionization, avalanche model and a combination of the two. Avalanche model can not be used in the ultraviolet region, the result of the combination model can be used as reference. The authors analyze the relations between the laser induce damage electric field strengths to optical thin film and laser frequency, pulse duration. The relations between materials band gap and damage threshold electric field strengths is analyzed.
Keywords:optical thin films  damage threshold electric field instensity  ultraviolet
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