扫描电镜X射线能谱分析法测定低能重离子注入黄豆种子的深度 |
| |
引用本文: | 高清祥,杨汉民,李文建,颉红梅,卫增泉.扫描电镜X射线能谱分析法测定低能重离子注入黄豆种子的深度[J].核农学报,1996,10(4):239-243. |
| |
作者姓名: | 高清祥 杨汉民 李文建 颉红梅 卫增泉 |
| |
作者单位: | [1]兰州大学生物系 [2]中国科学院兰州代物理研究所 |
| |
摘 要: | 利用200kV 离子注入机产生的 Fe~+、Cu~+和 Zn~+3种重离子分别对黄豆种子进行直流注入,以扫描电镜X射线能谱分析法测定低能重离子的注入深度。测量定结果表明,Fe~+的最大注入深度未超过18μm,Cu~+、Zn~+的最大注入深度可达25μm。
|
关 键 词: | 低能重离子 直流注入 扫描电镜 X 射线能谱分析 黄豆 |
收稿时间: | 2009-12-31 |
修稿时间: | 2009-12-31 |
THE DEPTH OF LOW ENERGY HEAVY IONS Fe~+,Cu~+ AND Zn~+ INTO SOYBEAN SEEDS DETECTED BY SEM-EDAX |
| |
Abstract: | The soybean seeds were implanted with Fe~+,Cu~+ and Zn~+ low energy ions which were pro- duced by 200kV implantation ion installation at Institute of Modern Physics,Lanzhou.The im- plantation depth of ions was determined by means of a scanning energy dispersive analysis of X- ray(SEM-EDAX).The analysis results showed that the depth of Fe~+ ions implantation was not more than 18 μm,the deepest depth of Cu~+ and Zn~+ ions implantation reached was 25μm. |
| |
Keywords: | heavy ion ion implanting SEM-EDAX soybean |
本文献已被 维普 等数据库收录! |
| 点击此处可从《核农学报》浏览原始摘要信息 |
| 点击此处可从《核农学报》下载免费的PDF全文 |