N+离子束注入诱变选育桑黄菌株的研究

目的]研究N+离子注入诱变选育桑黄菌株,提高桑黄菌的产量。方法]通过对N+离子注入诱变后桑黄孢子的存活率以及突变率的研究确定离子注入的最适剂量,诱变后用拮抗试验结合酯酶同工酶酶谱分析验证菌株发生突变,之后分别以菌丝形态、菌丝生长速度、液体发酵菌丝体生物量以及液体发酵胞外多糖产量为参数进行变异菌株的筛选。结果]确定了离子注入诱变桑黄适宜参数:注入剂量2.00×1016ions/cm2,注入能量20 KeV。得到1株高产桑黄菌株PI 126,其生物量和多糖产量分别为23.7和7.6 g/L,比出发菌株相应产量显著提高。经平板传代,10代后变异菌株的遗传性状较稳定,无明显回复突变。结论]低能离子束注入技术用于桑黄育种是可行的。

Study on Breeding Phellinus igniarius by N+ Implantation

Objective] To breed Phellinus igniarius and improved P. igniarius yield by N＋ implantation. Method] The optimum dosage of ion implantation was obtained through research on survival rate and mutation rate of P. igniarius spore after induction of N ＋ implantation. Af- ter mutation, antagonistic test combined with analysis of esterase isozymes to verify strain mutation, with mycelial morphology, growth rate, liquid fermentation mycelial biomass and extracellnlar polysaccharide yield as parameters to screen variant strain. Result ] The appropriate parameters of the ion implantation mutagenesis P. igniarius were determined： implantation dosage 2.00 × 1016 ions/cm2, injection energy 20 KeV. A high-yielding strain of P. igniarius called PI 126 was obtained, whose biomass and polysaccharide production are 23.7 g/L and 7.6 g/L respectively, and the mutant genetic traits are stable after ten generation. Conclusion] Low energy ion beam implantation is feasible for breeding of P. igniarius.