| 一种互补式LVTSCR的CMOS芯片ESD保护方法 |
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| 引用本文： | 申莎莎.一种互补式LVTSCR的CMOS芯片ESD保护方法[J].吉林林学院学报,2014(5):697-700. |
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| 作者姓名： | 申莎莎 |
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| 作者单位： | 运城学院物理与电子工程系,山西运城044000 |
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| 摘 要： | 为实现对CMOS芯片进行ESD防护提出了一种互补式LVTSCR结构,给出了该结构横切面电路模型以及等效电路,分析了工作原理及可行性,并与现有的ESD保护结构进行对比分析,采用ISE-TCAD工具进行仿真实验.结果表明：该结构具有占用面积小,单位面积防护效率高的特性,可有效降低成本.
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| 关 键 词： | ESD保护 可控硅 CMOS集成电路 LVTSCR |
ESD Protection Method of CMOS Chips Based on LVTSCR |
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| Authors: | Shen Shasha |
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| Institution: | Shen Shasha ( Department of Physics and Electronic Engineering of Yuncheng University, Yuncheng 044000, China ) |
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| Abstract: | This paper presents a new type of complementary LVTSCR structure for ESD protection of CMOS chips. It describes the circuit model of the transverse section and the equivalent circuit,and then analyzes the working principles. It proves the feasibility of the structure and compares it with the existing ESD protection structure. ISE-TCAD tools are used for the simulation experiments,which shows that the structure occupies smaller area and has a high protection efficiency per unit area. |
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| Keywords: | ESD protection SCR CMOS Ics LVTSCR |
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