Epitaxial growth of diamond films on si(111) at room temperature by mass-selected low-energy c+ beams

Diamond films ( approximately 0.7 micrometer thick) have been epitaxially grown on Si(111) substrates at room temperature with mass-selected 120-electronvolt C(+) ions. The diamond reflections observed in x-ray diffraction are well localized at their predicted positions, indicating that (i) the diamond(111) and (220) planes are parallel to the Si(111) and (220), respectively; (ii) the diamond rotational spread around its (111) normal is approximately 1.7 degrees ; and (iii) the mosaic block size is approximately 150 A. The film growth is discussed in terms of subplantation-a shallow subsurface implantation model. This discovery is an important step toward diamond semiconductor devices.