Observation of the spin Hall effect in semiconductors

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.     

A gate-controlled bidirectional spin filter using quantum coherence

We demonstrate a quantum coherent electron spin filter by directly measuring the spin polarization of emitted current. The spin filter consists of an open quantum dot in an in-plane magnetic field; the in-plane field gives the two spin directions different Fermi wavelengths resulting in spin-dependent quantum interference of transport through the device. The gate voltage is used to select the preferentially transmitted spin, thus setting the polarity of the filter. This provides a fully electrical method for the creation and detection of spin-polarized currents. Polarizations of emitted current as high as 70% for both spin directions (either aligned or anti-aligned with the external field) are observed.     

Unconventional sequence of fractional quantum Hall states in suspended graphene

Graphene provides a rich platform to study many-body effects, owing to its massless chiral charge carriers and the fourfold degeneracy arising from their spin and valley degrees of freedom. We use a scanning single-electron transistor to measure the local electronic compressibility of suspended graphene, and we observed an unusual pattern of incompressible fractional quantum Hall states that follows the standard composite fermion sequence between filling factors ν = 0 and 1 but involves only even-numerator fractions between ν = 1 and 2. We further investigated this surprising hierarchy by extracting the corresponding energy gaps as a function of the magnetic field. The sequence and relative strengths of the fractional quantum Hall states provide insight into the interplay between electronic correlations and the inherent symmetries of graphene.     

Spin-torque switching with the giant spin Hall effect of tantalum

Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.     

Giant nonlocality near the Dirac point in graphene

Transport measurements have been a powerful tool for discovering electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observed a large nonlocal response near the Dirac point in fields as low as 0.1 tesla, which persisted up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by the lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point.     

Quantum spin Hall effect and topological phase transition in HgTe quantum wells

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.     

Spin-transistor action via tunable Landau-Zener transitions

Spin-transistor designs relying on spin-orbit interaction suffer from low signal levels resulting from low spin-injection efficiency and fast spin decay. Here, we present an alternative approach in which spin information is protected by propagating this information adiabatically. We demonstrate the validity of our approach in a cadmium manganese telluride diluted magnetic semiconductor quantum well structure in which efficient spin transport is observed over device distances of 50 micrometers. The device is turned "off" by introducing diabatic Landau-Zener transitions that lead to a backscattering of spins, which are controlled by a combination of a helical and a homogeneous magnetic field. In contrast to other spin-transistor designs, we find that our concept is tolerant against disorder.     

Observation of the spin hall effect of light via weak measurements

We have detected a spin-dependent displacement perpendicular to the refractive index gradient for photons passing through an air-glass interface. The effect is the photonic version of the spin Hall effect in electronic systems, indicating the universality of the effect for particles of different nature. Treating the effect as a weak measurement of the spin projection of the photons, we used a preselection and postselection technique on the spin state to enhance the original displacement by nearly four orders of magnitude, attaining sensitivity to displacements of approximately 1 angstrom. The spin Hall effect can be used for manipulating photonic angular momentum states, and the measurement technique holds promise for precision metrology.     

Spin chirality, Berry phase, and anomalous Hall effect in a frustrated ferromagnet

An electron hopping on non-coplanar spin sites with spin chirality obtains a complex phase factor (Berry phase) in its quantum mechanical amplitude that acts as an internal magnetic field, and is predicted to manifest itself in the Hall effect when it is not cancelled. The present combined work of transport measurement, neutron scattering, and theoretical calculation provides evidence that the gigantic anomalous Hall effect observed in Nd2Mo2O7, a pyrochlore ferromagnet with geometrically frustrated lattice structure, is mostly due to the spin chirality and the associated Berry phase originating from the Mo spin tilting.     

Experimental spin ratchet

Spintronics relies on the ability to transport and use the spin properties of an electron rather than its charge. We describe a spin ratchet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground-state energetics of a single-electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. We demonstrate spin transport and quantify the spin ratchet efficiency by using ferromagnetic leads with known spin polarization. Our results are modeled theoretically and provide a robust route to the generation and manipulation of pure spin currents.     

Semiconductor alternating-current motor drives and energy conservation

The concentration of electrical energy usage in alternating-current motor drives presents an opportunity for substantial conservation. Emerging advances in power semiconductor transistor systems will support a major commerical effort to this end. An alternating-current synthesizer for this purpose may soon be available. The synthesizer produces electricial power of variable and programmable frequency, voltage, and wave form so that performance can be optimized. This technology provides the additional opportunity for fundamental improvements in electrical distribution and usage systems in the longer term. Power processing with semiconductor a-c motor controls is expected to become widespread in the near future.     

Quantum spin hall insulator state in HgTe quantum wells

Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2e(2)/h, where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field-induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.     

Limits on silicon nanoelectronics for terascale integration

Throughout the past four decades, silicon semiconductor technology has advanced at exponential rates in both performance and productivity. Concerns have been raised, however, that the limits of silicon technology may soon be reached. Analysis of fundamental, material, device, circuit, and system limits reveals that silicon technology has an enormous remaining potential to achieve terascale integration (TSI) of more than 1 trillion transistors per chip. Such massive-scale integration is feasible assuming the development and economical mass production of double-gate metal-oxide-semiconductor field effect transistors with gate oxide thickness of about 1 nanometer, silicon channel thickness of about 3 nanometers, and channel length of about 10 nanometers. The development of interconnecting wires for these transistors presents a major challenge to the achievement of nanoelectronics for TSI.     

半导体物理学的发展及启示

半导体物理学是凝聚态物理学的一个重要分支，也是现代微电子器件工艺学的理论核心。研究和探讨半导体物理学的发展规律，对于掌握半导体科学技术今后的发展趋势具有重要意义。文章着重回顾与评述了晶体管的发明过程、半导体超晶格物理的发展以及半导体纳米量子器件的研究进展，展望了新型半导体纳米材料的发展前景，并以半导体物理学的发展历程为依据剖析了其发展规律和特点     

Imaging spin transport in lateral ferromagnet/semiconductor structures

We directly imaged electrical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devices, which have ferromagnetic source and drain tunnel-barrier contacts. The emission of spins from the source was observed, and a region of spin accumulation was imaged near the ferromagnetic drain contact. Both injected and accumulated spins have the same orientation (antiparallel to the contact magnetization), and we show that the accumulated spin polarization flows away from the drain (against the net electron current), indicating that electron spins are polarized by reflection from the ferromagnetic drain contact. The electrical conductance can be modulated by controlling the spin orientation of optically injected electrons flowing through the drain.     

Suppressing spin qubit dephasing by nuclear state preparation

Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant component of nuclear spin fluctuations below its equilibrium value by a factor of approximately 70, extending the inhomogeneous dephasing time for the two-electron spin state beyond 1 microsecond. The nuclear state can be readily prepared by electrical gate manipulation and persists for more than 10 seconds.     

Dissipationless quantum spin current at room temperature

Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.     

Nuclei-induced frequency focusing of electron spin coherence

The hyperfine interaction of an electron with the nuclei is considered as the primary obstacle to coherent control of the electron spin in semiconductor quantum dots. We show, however, that the nuclei in singly charged quantum dots act constructively by focusing the electron spin precession about a magnetic field into well-defined modes synchronized with a laser pulse protocol. In a dot with a synchronized electron, the light-stimulated fluctuations of the hyperfine nuclear field acting on the electron are suppressed. The information about electron spin precession is imprinted in the nuclei and thereby can be stored for tens of minutes in darkness. The frequency focusing drives an electron spin ensemble into dephasing-free subspaces with the potential to realize single frequency precession of the entire ensemble.     

Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation

We present a scheme that enables gigahertz-bandwidth three-dimensional control of electron spins in a semiconductor heterostructure with the use of a single voltage signal. Microwave modulation of the Landé g tensor produces frequency-modulated electron spin precession. Driving at the Larmor frequency results in g-tensor modulation resonance, which is functionally equivalent to electron spin resonance but without the use of time-dependent magnetic fields. These results provide proof of the concept that quantum spin information can be locally manipulated with the use of high-speed electrical circuits.     

Coherent control of a single electron spin with electric fields

Manipulation of single spins is essential for spin-based quantum information processing. Electrical control instead of magnetic control is particularly appealing for this purpose, because electric fields are easy to generate locally on-chip. We experimentally realized coherent control of a single-electron spin in a quantum dot using an oscillating electric field generated by a local gate. The electric field induced coherent transitions (Rabi oscillations) between spin-up and spin-down with 90 degrees rotations as fast as approximately 55 nanoseconds. Our analysis indicated that the electrically induced spin transitions were mediated by the spin-orbit interaction. Taken together with the recently demonstrated coherent exchange of two neighboring spins, our results establish the feasibility of fully electrical manipulation of spin qubits.