Silicon device scaling to the sub-10-nm regime

In the next decade, advances in complementary metal-oxide semiconductor fabrication will lead to devices with gate lengths (the region in the device that switches the current flow on and off) below 10 nanometers (nm), as compared with current gate lengths in chips that are now about 50 nm. However, conventional scaling will no longer be sufficient to continue device performance by creating smaller transistors. Alternatives that are being pursued include new device geometries such as ultrathin channel structures to control capacitive losses and multiple gates to better control leakage pathways. Improvement in device speed by enhancing the mobility of charge carriers may be obtained with strain engineering and the use of different crystal orientations. Here, we discuss challenges and possible solutions for continued silicon device performance trends down to the sub-10-nm gate regimes.     

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.     

What makes a good computer device?

Numerous development projects aimed at replacing the silicon technology that dominates computer logic with a faster alternative have been conducted throughout the past 25 years. None has succeeded. The alternatives are usually based on a device that switches very rapidly, and they neglect many other requirements of computer logic. In this article the essential physical factors that account for the success of transistors in digital applications are identified, as are the factors that are absent in proposed alternative devices.     

Nanoelectromechanical systems

Nanoelectromechanical systems are evolving, with new scientific studies and technical applications emerging. Mechanical devices are shrinking in thickness and width to reduce mass, increase resonant frequency, and lower the force constants of these systems. Advances in the field include improvements in fabrication processes and new methods for actuating and detecting motion at the nanoscale. Lithographic approaches are capable of creating freestanding objects in silicon and other materials, with thickness and lateral dimensions down to about 20 nanometers. Similar processes can make channels or pores of comparable dimensions, approaching the molecular scale. This allows access to a new experimental regime and suggests new applications in sensing and molecular interactions.     

Low-voltage, low-power, organic light-emitting transistors for active matrix displays

Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.     

An integrated logic circuit assembled on a single carbon nanotube

Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.     

Small-diameter silicon nanowire surfaces

Small-diameter (1 to 7 nanometers) silicon nanowires (SiNWs) were prepared, and their surfaces were removed of oxide and terminated with hydrogen by a hydrofluoric acid dip. Scanning tunneling microscopy (STM) of these SiNWs, performed both in air and in ultrahigh vacuum, revealed atomically resolved images that can be interpreted as hydrogen-terminated Si (111)-(1 x 1) and Si (001)-(1 x 1) surfaces corresponding to SiH3 on Si (111) and SiH2 on Si (001), respectively. These hydrogen-terminated SiNW surfaces seem to be more oxidation-resistant than regular silicon wafer surfaces, because atomically resolved STM images of SiNWs were obtained in air after several days' exposure to the ambient environment. Scanning tunneling spectroscopy measurements were performed on the oxide-removed SiNWs and were used to evaluate the electronic energy gaps. The energy gaps were found to increase with decreasing SiNW diameter from 1.1 electron volts for 7 nanometers to 3.5 electron volts for 1.3 nanometers, in agreement with previous theoretical predictions.     

Rapid vapor deposition of highly conformal silica nanolaminates

Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.     

Laser-focused atomic deposition

The ability to fabricate nanometer-sized structures that are stable in air has the potential to contribute significantly to the advancement of new nanotechnologies and our understanding of nanoscale systems. Laser light can be used to control the motion of atoms on a nanoscopic scale. Chromium atoms were focused by a standing-wave laser field as they deposited onto a silicon substrate. The resulting nanostructure consisted of a series of narrow lines covering 0.4 millimeter by 1 millimeter. Atomic force microscopy measurements showed a line width of 65 +/- 6 nanometers, a spacing of 212.78 nanometers, and a height of 34 +/-+ 10 nanometers. The observed line widths and shapes are compared with the predictions of a semiclassical atom optical model.     

Chemically derived, ultrasmooth graphene nanoribbon semiconductors

We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges with possibly well-defined zigzag or armchair-edge structures. Electrical transport experiments showed that, unlike single-walled carbon nanotubes, all of the sub-10-nanometer GNRs produced were semiconductors and afforded graphene field effect transistors with on-off ratios of about 10(7) at room temperature.     

Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources

A chemical approach to atomic layer deposition (ALD) of oxide thin films is reported here. Instead of using water or other compounds for an oxygen source, oxygen is obtained from a metal alkoxide, which serves as both an oxygen and a metal source when it reacts with another metal compound such as a metal chloride or a metal alkyl. These reactions generally enable deposition of oxides of many metals. With this approach, an alumina film has been deposited on silicon without creating an interfacial silicon oxide layer that otherwise forms easily. This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.     

Electrochemistry and electrogenerated chemiluminescence from silicon nanocrystal quantum dots

Reversible electrochemical injection of discrete numbers of electrons into sterically stabilized silicon nanocrystals (NCs) (approximately 2 to 4 nanometers in diameter) was observed by differential pulse voltammetry (DPV) in N,N'-dimethylformamide and acetonitrile. The electrochemical gap between the onset of electron injection and hole injection-related to the highest occupied and lowest unoccupied molecular orbitals-grew with decreasing nanocrystal size, and the DPV peak potentials above the onset for electron injection roughly correspond to expected Coulomb blockade or quantized double-layer charging energies. Electron transfer reactions between positively and negatively charged nanocrystals (or between charged nanocrystals and molecular redox-active coreactants) occurred that led to electron and hole annihilation, producing visible light. The electrogenerated chemiluminescence spectra exhibited a peak maximum at 640 nanometers, a significant red shift from the photoluminescence maximum (420 nanometers) of the same silicon NC solution. These results demonstrate that the chemical stability of silicon NCs could enable their use as redox-active macromolecular species with the combined optical and charging properties of semiconductor quantum dots.     

A liquid-solution-phase synthesis of crystalline silicon

A liquid-solution-phase technique for preparing submicrometer-sized silicon single crystals is presented. The synthesis is based on the reduction of SiCl(4) and RSiCl(3) (R = H, octyl) by sodium metal in a nonpolar organic solvent at high temperatures (385 degrees C) and high pressures (> 100 atmospheres). For R = H, the synthesis produces hexagonal-shaped silicon single crystals ranging from 5 to 3000 nanometers in size. For R = octyl, the synthesis also produces hexagonal-shaped silicon single crystals; however, the size range is controlled to 5.5 +/- 2.5 nanometers.     

Self-aligned,vertical-channel,polymer field-effect transistors

The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar and vertical configurations. Embossing is used for the controlled microcutting of vertical sidewalls into polymer multilayer structures without smearing. Vertical-channel polymer field-effect transistors on flexible poly(ethylene terephthalate) substrates were fabricated, in which the critical channel length of 0.7 to 0.9 micrometers was defined by the thickness of a spin-coated insulator layer. Gate electrodes were self-aligned to minimize overlap capacitance by inkjet printing that used the embossed grooves to define a surface-energy pattern.     

Solar constant: first direct measurements

The solar constant was directly measured from an altitude of about 82 kilometers-apparently the first such determination. The total solar intensity was 136.1 milliwatts per square centimeter, or 1.952 calories per square centimeter, per minute-about 2.5 percent less than Johnson's derived value. Energy in the ultraviolet and visible regions (for lambda less than 607 nanometers) was 7.0 percent less than that obtained by integration over Johnson'Scurve; for integral flux of lambda greater than 607 nanometers there was almost perfect agreement. Seven supporting series of measurements from lower altitudes agreed extremely well with these results after correction for atmospheric extinction.     

Synthesis and characterization of anisometric cobalt nanoclusters

Sonication of aqueous Co(2+) and hydrazine resulted in the formation of anisometric (disk-shaped) cobalt nanoclusters that averaged about 100 nanometers in width and 15 nanometers in thickness. Electron diffraction from single particles revealed that they were oriented (001) crystals that conformed to a trigonal or hexagonal unit cell four times the size of the cell adopted by bulk alpha-cobalt. Lorentz microscopy indicated that these were single-magnetic domain particles, with the axis of magnetization located in the (101) plane, offset at some appreciable angle from the (001) axis.     

Stepwise formation of multilayered nanostructural films from macromolecular precursors

Sequential adsorption of a cationic polyelectrolyte and individual sheets of the silicate mineral hectorite has allowed controlled, stepwise formation of multilayered films on silicon wafers. Each component adsorbs rapidly by an ion-exchange mechanism, and x-ray diffractometry indicates structural order even in films with thicknesses greater than 0.2 micrometer. The large lateral extent of the silicate sheets (about 25 to 35 nanometers) allows each layer to cover any packing defects in the underlying layer, thus preserving structural order in the growing film. With careful choice of component materials, this method should allow for the preparation of multilayered films with a variety of technologically important properties.     

Exsolution of hornblende and the solubility limits of calicum in orthoamphibole

Exsolution between orthorhombic and monoclinic amphibole has been postulated for many years on the basis of crystal-chemical and structural differences. Transmission and analytical electron microscope examination of calium-rich gedrite specimens from southwestern New Hampshire has now revealed evidence for exsolution of calcic clinoamphibole (hornblende) from ferromagnesian orthoamphibole. Analytical electron microscopy data suggests that calcium has a low solubility limit in the orthoamphibole structure. The hornblende lamellae range from only a few unit cells in thickness to about 80 nanometers. The formation of the calcic amphibole lamellae resulted from heterogeneous nucleation and growth along pre-existing (100) stacking faults. Thus, the deformation processes producing the stacking faults played a key role in preparing the sites for exsolution.     

高精度大尺寸硅晶片的双面研磨抛光机改进设计

随着IC设计技术和制造技术的发展和进步,集成电路芯片的集成度在不断提高,芯片密度呈指数增长趋势。硅晶片作为集成电路芯片的主要材料,尺寸越来越大。在分析国内双面抛光机典型机型原理和特点的基础上,针对运用于大尺寸甚至是直径400 mm的硅晶片,提出高精度双面研磨抛光机在机械结构和控制系统等方面的改进措施,很好地解决了国内目前对大尺寸硅晶片加工难、加工精度不高等难题。     

Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes

Chemical vapor deposition of germanium onto the silicon (001) surface at atmospheric pressure and 600 degrees Celsius has previously been shown to produce distinct families of smaller (up to 6 nanometers high) and larger (all approximately 15 nanometers high) nanocrystals. Under ultrahigh-vacuum conditions, physical vapor deposition at approximately the same substrate temperature and growth rate produced a similar bimodal size distribution. In situ scanning tunneling microscopy revealed that the smaller square-based pyramids transform abruptly during growth to significantly larger multifaceted domes, and that few structures with intermediate size and shape remain. Both nanocrystal shapes have size-dependent energy minima that result from the interplay between strain relaxation at the facets and stress concentration at the edges. A thermodynamic model similar to a phase transition accounts for this abrupt morphology change.