Polycrystalline CVD Diamond Films with High Electrical Mobility

Advances in the deposition process have led to dramatic improvements in the electronic properties of polycrystalline diamond films produced by chemical vapor deposition (CVD). It is now possible to produce CVD diamond with properties approaching those of IIa natural diamonds. The combined electron-hole mobility, as measured by transient photoconductivity at low carrier density, is 4000 square centimeters per volt per second at an electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds. Carrier lifetimes measured under the same conditions are 150 picoseconds for the CVD diamond and 300 picoseconds for single-crystal diamond. The collection distance at a field of 10 kilovolts per centimeter is 15 micrometers for the CVD diamond as compared to 30 micrometers for natural diamonds. The electrical qualities appear to correlate with the width of the diamond Raman peak. Also, although the collection distance at the highest fields in the films nearly equals the average grain size, there is no evidence of deleterious grain boundary effects.     

Electrical Transport Properties of Undoped CVD Diamond Films

Polycrystalline diamond films synthesized by microwave-assisted chemical vapor deposition (MACVD) were examined with transient photoconductivity, and two fundamental electrical transport properties, the carrier mobility and lifetime, were measured. The highest mobility measured is 50 centimeters squared per volt per second at low initial carrier densities (<10(15) per cubic centimeter). Electron-hole scattering causes the carrier mobility to decrease at higher carrier densities. Although not measured directly, the carrier lifetime was inferred to be 40 picoseconds. The average drift length of the carriers is smaller than the average grain size and appears to be limited by defects within the grains. The carrier mobility in the MACVD films is higher than values measured in lower quality dc-plasma films but is much smaller than that of single-crystal natural diamond.     

Ambipolar pentacene field-effect transistors and inverters

Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per second at room temperature up to 1200 and 320 square centimeters per volt per second at low temperatures for hole and electron transport, respectively, following a power-law dependence. The possible simplification of the fabrication process of complementary logic circuits with these transistors, together with the high carrier mobilities, may be seen as another step toward applications of plastic electronics.     

Gallium arsenide transistors: realization through a molecularly designed insulator

A GaAs-based transistor, analogous to commercial silicon devices, has been fabricated with vapor-deposited cubic GaS as the insulator material. The n-channel, depletion mode, GaAs field-effect transistor shows, in addition to classical transistor characteristics, a channel mobility of 4665.6 square centimeters per volt per second, an interfacial trap density of 10(11) per electron volt per square centimeter, and a transconductance of 7 millisiemens for a 5-micrometer gate length at a gate voltage of 8 volts. Furthermore, the GaAs transistor shows an on-to-off resistance ratio comparable to that of commercial devices.     

Fractional quantum hall effect in organic molecular semiconductors

High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 10(4) square centimeters per volt per second. The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate voltage. Well-defined Shubnikov-de Haas oscillations and quantized Hall plateaus were observed for two-dimensional carrier densities in the range of 10(11) per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as approximately 2 kelvin.     

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.     

High-resolution inkjet printing of all-polymer transistor circuits

Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10(5) were achieved.     

Integrated optoelectronic devices based on conjugated polymers

An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10(6). The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.     

Mesoscale ocean eddies in the north pacific: westward propagation

A set of subsurface temperature measurements in the trade wind region northeast of Hawaii reveals large perturbations about the mean state, with zonal wavelengths of 480 kilometers. The perturbations are identified as mesoscale baroclinic eddies, and they appear to drift westward at a rate of 4.7 +/- 2.0 centimeters per second. The large-scale ( 1000 kilometers) baroclinic flow at a depth of 200 meters is 1.5 +/- 0.7 centimeters per second, also toward the west, and comparable in magnitude with the eddy drift velocity; this finding suggests that the eddy drift is strongly influenced by the large-scale flow. Mesoscale eddies have been discovered in the tropical and subtropical Atlantic Ocean. Their existence in the Pacific Ocean is now confirmed.     

Radium-226 and radon-222: concentration in atlantic and pacific oceans

Measurements of radon-222 in seawater suggest the following. The radium-226 content of surface water in both the Atlantic and Pacific oceans is uniformly close to about 4 x 10(-14) gram per liter. The deep Pacific has a concentration of radium-226 that is four times higher and the deep Atlantic a concentration twice as high as that of the surface. These distribution profiles can be explained by the same particle-settling rate for radium-226 from surface to depth for the two oceans and by a threefold longer residence time of water in the deep Pacific than in the deep Atlantic. The vertical distribution of the deficiency of radon-222 in the surface water of the northwest Pacific Ocean suggests a coefficient of vertical eddy diffusion as high as 120 square centimeters per second and a gas-exchange rate for carbon dioxide in surface water between 14 and 60 moles per square meter per year. Vertical profiles of the excess of radon-222 in near-bottom water of the South Atlantic give coefficients of vertical eddy diffusion ranging from 1.5 to more than 50 square centimeters per second.     

Oceanic electric fields: perception by american eels?

American eels, long-distance migrating fish, consistently exhibited conditioned cardiac deceleration responses to electric fields as small as 0.167 x 10(-2) microampere per square centimeter in water of resistivity 4000 ohm centimeters (6.7 microvolts per centimeter) and 400 ohm centimeters (0.67 microvolt per centimeter). Fewer responses were shown at this current density (0.167 x 10(-2) microampere per square centimeter) in more saline water (40 ohm centimeters, 0.067 microvolt per centimeter) and at a lower current density (0.167 x 10(-3) microampere per square centimeter) in fresh water. Thus, eels have sufficient sensitivity to utilize geoelectric information for orientation.     

Destruction rate of h3+ by low-energy electrons measured in a storage-ring experiment

Knowledge of the abundance of H(3)(+) is needed in interstellar and planetary atmospheric chemistry. An important destruction mechanism of H(3)(+) is low-energy electron impact followed by dissociation, but estimates of the reaction rate span several orders of magnitude. As an attempt to resolve this uncertainty, the cross section for dissociative recombination of vibrationally cold H(3)(+) has been measured with an ion storage ring down to collision energies below 1 millielectron volt. A rate coefficient of 1.15 x 10(-7) cubic centimeters per second at 300 kelvin was deduced. The cross section scaled with collision energy according to E(-1.15), giving thee rate a temperature dependence of T(-0.65).     

Lunar surface: changes in 31 months and micrometeoroid flux

Comparison of pictures of the lunar surface taken 31 months apart by Surveyor 3 and Apollo 12 show only one change in the areas disturbed by Surveyor: a 2-millimeter particle, in a footpad imprint, that may have fallen in from the rim or been kicked in by an approaching astronaut. Vertical walls 6 centimeters high did not collapse and dark ejecta remained dark. No meteorite craters as large as 1.5 millimeters in diameter were seen on a smooth soil surface 20 centimeters in diameter; this indicates a micrometeoroid flux lower than 4 x 10(-7) micrometeoroids per square meter-second at an energy equivalent to about 3 x 10(-8) gram at 20 kilometers per second. This flux is near the lower limit of previous determinations.     

Blood velocity measurements in human retinal vessels

Laser Doppler velocimetry was used to measure the velocity of blood in human retinal vessels. The mean flow velocities obtained were 1.9 centimeters per second in a retinal vein and 2.2 centimeters per second in a retinal artery. Scattered light from a weak helium-neon laser beam focused on the vessel was detected by a photomultiplier, and the temporal correlation of the intensity fluctuations was measured with a photon counting autocorrelator. Autocorrelation functions for blood flowing through glass capillaries were used for calibration.     

Lateral diffusion of visual pigment in photorecptor disk membranes

Visual pigment molecules are found to move transversely, but not longitudinally, in both rod and cone outer segments of mud puppy and frog. This is consistent with the idea that they are immersed in a two-dimensional fluid disk membrane. The diffusion coefficient for the motion is about 5 x 10(-9) square centimeters per second at 20 degrees C, corresponding to a root-mean-square molecular displacement of 0.3 micrometer in 1 second.     

Astronomy and Solar Physics: X-ray Gas Scintillation Spectrometer Experiment

The payload complement on Spacelab 1 included a spectrometer for observations of the brighter cosmic x-ray sources. The primary scientific objective was to study the detailed spectral features of cosmic x-ray sources and their associated temporal variations over a wide energy range from about 2 to 80 kiloelectron volts. The instrument, based on the gas scintillation proportional counter, had a geometrical area of some 180 square centimeters with an energy resolution of about 9 percent at 7 kiloelectron volts. The results presented here show new results from two galactic binary x-ray sources, Cygnus X-3 and Centaurus X-3, and from the Perseus cluster of galaxies. The excellent energy resolution of the instrument permits line features to be identified in these sources with unprecedented quality.     

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.     

Effects of trace gases and water vapor on the diffusion coefficient of polonium-218

The two-filter method described by Thomas and LeClare was used to investigate the effects of trace concentrations of nitric oxide and nitrogen dioxide in dry nitrogen on the diffusion coefficient of radium A (polonium-218). Charged radium A was neutralized in 10 parts per million (ppm) nitrogen dioxide in dry nitrogen, in 8.3 ppm nitric oxide in dry 92 percent nitrogen and 8 percent oxygen, and in nitrogen with 20 and 80 percent relative humidity. No neutralization was seen in dry nitrogen, dry oxygen, dry air, or 10 ppm nitric oxide in dry nitrogen. The diffusion coefficient of the neutral radium A species was found to be 0.079 square centimeters per second, regardless of the relative humidity of the nitrogen gas atmosphere. Lower values were observed for charged species.     

Electronic confinement and coherence in patterned epitaxial graphene

Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.     

Protons and Electrons in Jupiter's Magnetic Field: Results from the University of Chicago Experiment on Pioneer 10

Fluxes of high energy electrons and protons are found to be highly concentrated near the magnetic equatorial plane from distances of ~ 30 to ~ 100 Jovian radii (R(J)). The 10-hour period of planetary rotation is observed as an intensity variation, which indicates that the equatorial zone of high particle fluxes is inclined with respect to the rotation axis of the planet. At radial distances [unknown] 20 R(J) the synchrotron-radiation-producing electrons with energies greater, similar 3 million electron volts rise steeply to a maximum intensity of ~ 5 x 10(8) electrons per square centimeter per second near the periapsis at 2.8 R(J). The flux of protons with energies greater, similar 30 million electron volts reaches a maximum intensity of ~ 4 x 10(6) protons per square centimeter per second at ~ 3.5 R(J) with the intensity decreasing inside this radial distance. Only for radial distances [unknown] 20 R(J) does the radiation behave in a manner which is similar to that at the earth. Burst of electrons with energies up to 30 million electron volts, each lasting about 2 days, were observed in interplanetary space beginning approximately 1 month before encounter. This radiation appears to have escaped from the Jovian bow shock or magnetosphere.