三体磨料磨损试验机设计研究

饲料环模制粒机在挤压加工苜蓿草颗粒成型过程中会对环模产生严重的磨损,为探究环模失效的磨损机理,新设计了一种三体磨料磨损试验机,模拟制粒工况.该试验机具有加热及相应的控制系统,温度偏差小于2%,可用于100℃左右温度条件下草粉等磨料与不同金属试样的磨损试验.     

The Role of excited-state topology in three-body dissociation of sym-triazine

Molecular fragmentation into three products poses an analytical challenge to theory and experiment alike. We used translational spectroscopy and high-level ab initio calculations to explore the highly debated three-body dissociation of sym-triazine to three hydrogen cyanide molecules. Dissociation was induced by charge exchange between the sym-triazine radical cation and cesium. Calculated state energies and electronic couplings suggest that reduction initially produces a population of sym-triazine partitioned between the 3s Rydberg and pi* <-- n electronically excited manifolds. Analysis of the topology of these manifolds, along with momentum correlation in the dissociation products, suggests that a conical intersection of two potential energy surfaces in the 3s Rydberg manifold leads to stepwise dissociation, whereas a four-fold glancing intersection in the pi* <-- n manifold leads to a symmetric concerted reaction.     

Laser-focused atomic deposition

The ability to fabricate nanometer-sized structures that are stable in air has the potential to contribute significantly to the advancement of new nanotechnologies and our understanding of nanoscale systems. Laser light can be used to control the motion of atoms on a nanoscopic scale. Chromium atoms were focused by a standing-wave laser field as they deposited onto a silicon substrate. The resulting nanostructure consisted of a series of narrow lines covering 0.4 millimeter by 1 millimeter. Atomic force microscopy measurements showed a line width of 65 +/- 6 nanometers, a spacing of 212.78 nanometers, and a height of 34 +/-+ 10 nanometers. The observed line widths and shapes are compared with the predictions of a semiclassical atom optical model.     

True atomic resolution by atomic force microscopy through repulsive and attractive forces

The (1014) cleavage plane of calcite has been investigated by atomic force microscopy in water at room temperature. True lateral atomic-scale resolution was achieved; the atomic-scale periodicities as well as the expected relative positions of the atoms within each unit cell were obtained. Along monoatomic step lines, atomic-scale kinks, representing point-like defects, were resolved. Attractive forces on the order of 10(-11) newton acting between single atomic sites on the sample and the front atoms of the tip were directly measured and provided the highest, most reliable resolution on a flat, well-ordered surface.     

Negative differential resistance on the atomic scale: implications for atomic scale devices

Negative differential resistance (NDR) is the essential property that allows fast switching in certain types of electronic devices. With scanning tunneling microscopy (STM) and scanning tunneling spectroscopy, it is shown that the current-voltage characteristics of a diode configuration consisting of an STM tip over specific sites of a boron-exposed silicon(111) surface exhibit NDR. These NDR-active sites are of atomic dimensions ( approximately 1 nanometer). NDR in this case is the result of tunneling through localized, atomic-like states. Thus, desirable device characteristics can be obtained even on the atomic scale.     

Laser spectroscopy of trapped atomic ions

Recent developments in laser spectroscopy of atomic ions stored in electromagnetic traps are reviewed with emphasis on techniques that appear to hold the greatest promise of attaining extremely high resolution. Among these techniques are laser cooling and the use of single, isolated ions as experimental samples. Doppler shifts and other perturbing influences can be largely eliminated. Atomic resonances with line widths of a few parts in 10(11) have been observed at frequencies ranging from the radio frequency to the ultraviolet. Experimental accuracies of one part in 10(18) appear to be attainable.     

Spin coupling in engineered atomic structures

We used a scanning tunneling microscope to probe the interactions between spins in individual atomic-scale magnetic structures. Linear chains of 1 to 10 manganese atoms were assembled one atom at a time on a thin insulating layer, and the spin excitation spectra of these structures were measured with inelastic electron tunneling spectroscopy. We observed excitations of the coupled atomic spins that can change both the total spin and its orientation. Comparison with a model spin-interaction Hamiltonian yielded the collective spin configuration and the strength of the coupling between the atomic spins.     

Imaging phonon excitation with atomic resolution

Inelastic electron tunneling spectroscopy at low temperatures was used to investigate vibrations of Au(111) and Cu(111). The low-energy peaks at 9 millielectron volts (meV) on Au(111) and 21 meV on Cu(111) are attributed to phonons at surfaces. On Au(111), the phonon energy is not influenced by the different stacking of the surface atoms, but it is considerably influenced by different atomic distances within the surface layer. The spatial variation of the phonon excitation is measured in inelastic electron tunneling maps on Au(111), which display atomic resolution. This atomic resolution is explained in terms of site-specific phonon excitation probabilities.     

Ohm's law survives to the atomic scale

As silicon electronics approaches the atomic scale, interconnects and circuitry become comparable in size to the active device components. Maintaining low electrical resistivity at this scale is challenging because of the presence of con?ning surfaces and interfaces. We report on the fabrication of wires in silicon--only one atom tall and four atoms wide--with exceptionally low resistivity (~0.3 milliohm-centimeters) and the current-carrying capabilities of copper. By embedding phosphorus atoms within a silicon crystal with an average spacing of less than 1 nanometer, we achieved a diameter-independent resistivity, which demonstrates ohmic scaling to the atomic limit. Atomistic tight-binding calculations con?rm the metallicity of these atomic-scale wires, which pave the way for single-atom device architectures for both classical and quantum information processing.