Single-Electron Transport in Ropes of Carbon Nanotubes

The electrical properties of individual bundles, or "ropes," of single-walled carbon nanotubes have been measured. Below about 10 kelvin, the low-bias conductance was suppressed for voltages less than a few millivolts. In addition, dramatic peaks were observed in the conductance as a function of a gate voltage that modulated the number of electrons in the rope. These results are interpreted in terms of single-electron charging and resonant tunneling through the quantized energy levels of the nanotubes composing the rope.     

Spin-polarized resonant tunneling in magnetic tunnel junctions

Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling. The amplitude of the oscillation is so large that even the sign of the tunnel magnetoresistance alternates. The oscillation period depends on the applied bias voltage, reflecting the energy band structure of Cu. The results are encouraging for the development of spin-dependent resonant tunneling devices.     

Room temperature-operating spin-valve transistors formed by vacuum bonding

Functional integration between semiconductors and ferromagnets was demonstrated with the spin-valve transistor. A ferromagnetic multilayer was sandwiched between two device-quality silicon substrates by means of vacuum bonding. The emitter Schottky barrier injected hot electrons into the spin-valve base. The collector Schottky barrier accepts only ballistic electrons, which makes the collector current very sensitive to magnetic fields. Room temperature operation was accomplished by preparing Si-Pt-Co-Cu-Co-Si devices. The vacuum bonding technique allows the realization of many ideas for vertical transport devices and forms a permanent link that is useful in demanding adhesion applications.     

Formation of nanometer-scale grooves in silicon with a scanning tunneling microscope

Grooves a few nanometers wide can be formed on a Si(111) surface with a scanning tunneling microscope when the tip is above a critical voltage. This may provide a promising approach to nanodevice fabrication. The dependence of the critical voltage on tunneling current, tip polarity, and tip material was studied with silver, gold, platinum, and tungsten tips. The results are consistent with field emission of positive and negative silicon ions. The variation of critical voltage with current is explained quantitatively by a simple tunneling equation that includes the effect of the contact potential between tip and sample.     

Inducing and viewing the rotational motion of a single molecule

Tunneling electrons from the tip of a scanning tunneling microscope were used to induce and monitor the reversible rotation of single molecules of molecular oxygen among three equivalent orientations on the platinum(111) surface. Detailed studies of the rotation rates indicate a crossover from a single-electron process to a multielectron process below a threshold tunneling voltage. Values for the energy barrier to rotation and the vibrational relaxation rate of the molecule were obtained by comparing the experimental data with a theoretical model. The ability to induce the controlled motion of single molecules enhances our understanding of basic chemical processes on surfaces and may lead to useful single-molecule devices.     

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.     

Current-induced hydrogen tautomerization and conductance switching of naphthalocyanine molecules

The bistability in the position of the two hydrogen atoms in the inner cavity of single free-base naphthalocyanine molecules constitutes a two-level system that was manipulated and probed by low-temperature scanning tunneling microscopy. When adsorbed on an ultrathin insulating film, the molecules can be switched in a controlled fashion between the two states by excitation induced by the inelastic tunneling current. The tautomerization reaction can be probed by resonant tunneling through the molecule and is expressed as considerable changes in the conductivity of the molecule. We also demonstrated a coupling of the switching process so that the charge injection in one molecule induced tautomerization in an adjacent molecule.     

An on-demand coherent single-electron source

We report on the electron analog of the single-photon gun. On-demand single-electron injection in a quantum conductor was obtained using a quantum dot connected to the conductor via a tunnel barrier. Electron emission was triggered by the application of a potential step that compensated for the dot-charging energy. Depending on the barrier transparency, the quantum emission time ranged from 0.1 to 10 nanoseconds. The single-electron source should prove useful for the use of quantum bits in ballistic conductors. Additionally, periodic sequences of single-electron emission and absorption generate a quantized alternating current.     

Resonant tunneling in the quantum Hall regime: measurement of fractional charge

In experiments on resonant tunneling through a "quantum antidot" (a potential hill) in the quantum Hall (QH) regime, periodic conductance peaks were observed as a function of both magnetic field and back gate voltage. A combination of the two periods constitutes a measurement of the charge of the tunneling particles and implies that charge deficiency on the antidot is quantized in units of the charge of quasi-particles of the surrounding QH condensate. The experimentally determined value of the electron charge e is 1.57 x 10(-19) coulomb = (0.98 +/- 0.03) e for the states v = 1 and v = 2 of the integer QH effect, and the quasi-particle charge is 5.20 x 10(-20) coulomb = (0.325 +/- 0.01)e for the state v = (1/3) of the fractional QH effect.     

Probing the carrier capture rate of a single quantum level

The performance of many semiconductor quantum-based structures is governed by the dynamics of charge carriers between a localized state and a band of electronic states. Using scanning tunneling spectroscopy, we studied the transport of inelastic tunneling electrons through a prototypical localized state: an isolated dangling-bond state on a Si(111) surface. From the saturation of the current at an energy resonant with this state, the hole capture rate by the dangling bond was determined. By further mapping the spatial extension of its wave function, the localized nature of the level was found to be consistent with the small magnitude of its cross section. This approach illustrates how the microscopic environment of a single defect critically affects its carrier dynamics.     

Controlling the dynamics of a single atom in lateral atom manipulation

We studied the dynamics of a single cobalt (Co) atom during lateral manipulation on a copper (111) surface in a low-temperature scanning tunneling microscope. The Co binding site locations were revealed in a detailed image that resulted from lateral Co atom motion within the trapping potential of the scanning tip. Random telegraph noise, corresponding to the Co atom switching between hexagonal close-packed (hcp) and face-centered cubic (fcc) sites, was seen when the tip was used to try to position the Co atom over the higher energy hcp site. Varying the probe tip height modified the normal copper (111) potential landscape and allowed the residence time of the Co atom in these sites to be varied. At low tunneling voltages (less than approximately 5 millielectron volts), the transfer rate between sites was independent of tunneling voltage, current, and temperature. At higher voltages, the transfer rate exhibited a strong dependence on tunneling voltage, indicative of vibrational heating by inelastic electron scattering.     

The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer

A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 x 10(-5) e/hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/f-noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 Planck's over 2pi.     

Spin-dependent tunneling in self-assembled cobalt-nanocrystal superlattices

Self-assembled devices composed of periodic arrays of 10-nanometer-diameter cobalt nanocrystals display spin-dependent electron transport. Current-voltage characteristics are well described by single-electron tunneling in a uniform array. At temperatures below 20 kelvin, device magnetoresistance ratios are on the order of 10%, approaching the maximum predicted for ensembles of cobalt islands with randomly oriented preferred magnetic axes. Low-energy spin-flip scattering suppresses magnetoresistance with increasing temperature and bias-voltage.     

Atomic-resolution microscopy in water

The scanning tunneling microscope is revolutionizing the study of surfaces. In ultra-high vacuum it is capable not only of imaging individual atoms but also of determining energy states on an atom-by-atom basis. It is now possible to operate this instrument in water. Aqueous optical microscopy is confined to a lateral resolution limit of about 2000 angstroms, and aqueous x-ray microscopy has yielded a lateral resolution of 75 angstroms. With a scanning tunneling microscope, an image of a graphite surface immersed in deionized water was obtained with features less than 3 angstroms apart clearly resolved. Further, an image measured in saline solution demonstrated that the instrument can be operated under conditions useful for many biological samples.     

Rotation of a single molecule within a supramolecular bearing

Experimental visualization and verification of a single-molecule rotor operating within a supramolecular bearing is reported. Using a scanning tunneling microscope, single molecules were observed to exist in one of two spatially defined states laterally separated by 0.26 nanometers. One was identified as a rotating state and the other as an immobilized state. Calculations of the energy barrier for rotation of these two states show that it is below the thermal energy at room temperature for the rotating state and above it for the immobilized state.     

Electron tunneling through organic molecules in frozen glasses

Reaction rates extracted from measurements of donor luminescence quenching by randomly dispersed electron acceptors reveal an exponential decay constant of 1.23 per angstrom for electron tunneling through a frozen toluene glass (with a barrier to tunneling of 1.4 electron volts). The decay constant is 1.62 per angstrom (the barrier, 2.6 electron volts) in a frozen 2-methyl-tetrahydrofuran glass. Comparison to decay constants for tunneling across covalently linked xylyl (0.76 per angstrom) and alkyl (1.0 per angstrom) bridges leads to the conclusion that tunneling between solvent molecules separated by approximately 2 angstroms (van der Waals contact) is 20 to 50 times slower than tunneling through a comparable length of a covalently bonded bridge. Our results provide experimental confirmation that covalently bonded pathways can facilitate electron flow through folded polypeptide structures.     

Methylhydroxycarbene: tunneling control of a chemical reaction

Chemical reactivity is conventionally understood in broad terms of kinetic versus thermodynamic control, wherein the decisive factor is the lowest activation barrier among the various reaction paths or the lowest free energy of the final products, respectively. We demonstrate that quantum-mechanical tunneling can supersede traditional kinetic control and direct a reaction exclusively to a product whose reaction path has a higher barrier. Specifically, we prepared methylhydroxycarbene (H(3)C-C-OH) via vacuum pyrolysis of pyruvic acid at about 1200 kelvin (K), followed by argon matrix trapping at 11 K. The previously elusive carbene, characterized by ultraviolet and infrared spectroscopy as well as exacting quantum-mechanical computations, undergoes a facile [1,2]hydrogen shift to acetaldehyde via tunneling under a barrier of 28.0 kilocalories per mole (kcal mol(-1)), with a half-life of around 1 hour. The analogous isomerization to vinyl alcohol has a substantially lower barrier of 22.6 kcal mol(-1) but is precluded at low temperature by the greater width of the potential energy profile for tunneling.     

Photodetection with active optical antennas

Nanoantennas are key optical components for light harvesting; photodiodes convert light into a current of electrons for photodetection. We show that these two distinct, independent functions can be combined into the same structure. Photons coupled into a metallic nanoantenna excite resonant plasmons, which decay into energetic, "hot" electrons injected over a potential barrier at the nanoantenna-semiconductor interface, resulting in a photocurrent. This dual-function structure is a highly compact, wavelength-resonant, and polarization-specific light detector, with a spectral response extending to energies well below the semiconductor band edge.     

滴头堵塞率及堵塞位置对灌水均匀度的影响

采用控制堵塞试验的方法,在压力恒定的条件下,分析了堵塞率、堵塞位置对灌水均匀度的影响规律。试验结果表明：当压力在4～10 m变化时,压力对于灌水均匀度的影响不显著,其变化范围在1%以内,生产实际中可以适当降低滴灌带的工作压力达到降低造价的目的;堵塞率是影响灌水均匀度的主要原因,堵塞率越高灌水均匀度越差,当堵塞率超过10%时,灌水均匀度CU已经远低于规范的最低值;只有当堵塞率不大于10%时,堵塞位置才对灌水均匀度有一定的影响,当堵塞位置分布在滴灌带前三分之一段和全段时,对灌水均匀度的影响较明显,此时灌水均匀度最小。     

Box-Behnken 设计 - 响应面法优化感应静电喷雾参数

为了探究静电喷雾过程中多因素对荷质比的影响,采用感应荷电方式,先对4种孔径喷嘴的荷质比进行试验,选取一个荷质比变化较显著的喷嘴,然后采用单因素试验方法,分别对充电电压、喷雾压力、药液电导率3个因素进行试验,探讨各因素对荷质比的影响规律。在此基础上采用Box-Behnken设计-响应面法以TXVK-3型喷嘴的充电电压、喷雾压力、药液电导率进行3因素3水平的优化试验,确定最优参数。结果表明,在电压6.9 kV、喷雾压力0.3 MPa、药液电导率13.9 mS/cm时,平均荷质比为-0.227 mC/kg,相对误差不到2%。