Electrical Transport Properties of Undoped CVD Diamond Films

Polycrystalline diamond films synthesized by microwave-assisted chemical vapor deposition (MACVD) were examined with transient photoconductivity, and two fundamental electrical transport properties, the carrier mobility and lifetime, were measured. The highest mobility measured is 50 centimeters squared per volt per second at low initial carrier densities (<10(15) per cubic centimeter). Electron-hole scattering causes the carrier mobility to decrease at higher carrier densities. Although not measured directly, the carrier lifetime was inferred to be 40 picoseconds. The average drift length of the carriers is smaller than the average grain size and appears to be limited by defects within the grains. The carrier mobility in the MACVD films is higher than values measured in lower quality dc-plasma films but is much smaller than that of single-crystal natural diamond.     

Three-dimensional hydrogen microscopy in diamond

A microprobe of protons with an energy of 17 million electron volts is used to quantitatively image three-dimensional hydrogen distributions at a lateral resolution better than 1 micrometer with high sensitivity. Hydrogen images of a <110>-textured undoped polycrystalline diamond film show that most of the hydrogen is located at grain boundaries. The average amount of hydrogen atoms along the grain boundaries is (8.1 +/- 1.5) x 10(14) per square centimeter, corresponding to about a third of a monolayer. The hydrogen content within the grain is below the experimental sensitivity of 1.4 x 10(16) atoms per cubic centimeter (0.08 atomic parts per million). The data prove a low hydrogen content within chemical vapor deposition-grown diamond and the importance of hydrogen at grain boundaries, for example, with respect to electronic properties of polycrystalline diamond.     

High carrier mobility in single-crystal plasma-deposited diamond

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.     

Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation

Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is reported. The gadolinium oxide film has a cubic structure isomorphic to manganese oxide and is (110)-oriented in single domain on the (100) gallium arsenide surface. The gadolinium oxide film has a dielectric constant of approximately 10, with low leakage current densities of about 10(-9) to 10(-10) amperes per square centimeter at zero bias. Typical breakdown field is 4 megavolts per centimeter for an oxide film 185 angstroms thick and 10 megavolts per centimeter for an oxide 45 angstroms thick. Both accumulation and inversion layers were observed in the gadolinium oxide-gallium arsenide metal oxide semiconductor diodes, using capacitance-voltage measurements. The ability to grow thin single-crystal oxide films on gallium arsenide with a low interfacial density of states has great potential impact on the electronic industry of compound semiconductors.     

Diamond from the dabie shan metamorphic rocks and its implication for tectonic setting

Diamond occurs in ultrahigh pressure metamorphic rocks from Dabie Shan, Anhui Province, eastern China. Diamond-bearing rocks include eclogite, gamet-pyroxenite, and jadeitite. Diamond occurs in a mineral assemblage with coesite and jadeite. The diamonds and diamondiferous rocks of Dabie Shan are interpreted to be the products of ultrahigh pressure metamorphism in the undérthrust basement of the Yangtze continental plate during the early Mesozoic, at greater than 4.0 gigapascals and 900 degrees C. This interpretation is based on the distribution of rock units, the stability field of diamond, and isotopic data indicating a crustal origin for the rocks. Most diamonds occur as euhedral inclusions in garnets and are 10 to 60 micrometers across, although some are up to 700 micrometers across.     

MgB2 superconducting thin films with a transition temperature of 39 kelvin

We fabricated high-quality c axis-oriented epitaxial MgB2 thin films using a pulsed laser deposition technique. The thin films grown on (1 i 0 2) Al2O3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is approximately 6 x 10(6) amperes per cubic centimeter at 5 kelvin and approximately 3 x 10(5) amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, x-ray diffraction patterns indicate a highly c axis-oriented crystal structure perpendicular to the substrate surface.     

Epitaxial cuprate superconductor/ferroelectric heterostructures

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.     

Tailoring electrical transport across grain boundaries in polycrystalline graphene

Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and scattering of charge carriers at grain boundaries (GBs) could degrade its performance relative to exfoliated, single-crystal graphene. However, the electrical properties of GBs have so far been addressed indirectly without simultaneous knowledge of their locations and structures. We present electrical measurements on individual GBs in CVD graphene first imaged by transmission electron microscopy. Unexpectedly, the electrical conductance improves by one order of magnitude for GBs with better interdomain connectivity. Our study suggests that polycrystalline graphene with good stitching may allow for uniformly high electrical performance rivaling that of exfoliated samples, which we demonstrate using optimized growth conditions and device geometry.     

Mars: Mariner 9 Spectroscopic Evidence for H2O Ice Clouds

Spectral features observed with the Mariner 9 interferometer spectrometer are identified as those of H(2)O ice. The measured spectra are compared with theoretical calculations for the transfer of radiation through clouds of ice particles with variations in size distribution and integrated cloud mass. Comparisons with an observed spectrum from the Tharsis Ridge region indicate H(2)O ice clouds composed of particles with a mean radius of 2.0 micrometers and an integrated cloud mass of 5 x 10(-5) grain per square centimeter.     

Laser method for synthesis and processing of continuous diamond films on nondiamond substrates

A laser method based upon carbon ion implantation and pulsed laser melting of copper has been used to produce continuous diamond thin film. Carbon ions were implanted with ion energies in the range of 60 to 120 keV, and doses of 1.0 x 10(18) to 2.0 x 10(18) ions cm(-2). The ion-implanted specimens were treated with nanosecond excimer laser pulses with the following parameters: energy density, 3.0 to 5.0 J cm(-2); wavelength, 0.308 microm; pulse width, 45 nanoseconds. The specimens were characterized with scanning electron microscopy (SEM), x-ray diffraction, Rutherford backscattering/ion channeling, Auger, and Raman spectroscopy. The macroscopic Raman spectra contained a strong peak at 1332 cm(-1) with full width at half maximum of 5 cm(-1), which is very close to the quality of the spectra obtained from single-crystal diamond. The selected area electron diffraction patterns and imaging confirmed the films to be defect-free single crystal over large areas of up to several square micrometers with no grain boundaries. Low voltage SEM imaging of surface features indicated the film to be continuous with presence of growth steps.     

Use of taylor-aris dispersion for measurement of a solute diffusion coefficient in thin capillaries

A method for the fast measurement of the diffusion coefficients of both small and large molecules in thin capillaries is reported. The method relies on Taylor-Aris dispersion theory and uses standard instrumentation for capillary zone electrophoresis. With this equipment, which consists of thin capillaries (50 to 100 micrometers in inner diameter), an injection system, detector ports, and computer data acquisition, a sample plug is pumped through the capillary at known velocity and the peak dispersion coefficient (D(*)) is measured. With the experimentally measured values of D(*) and flow velocity, and knowledge of the inner diameter of the capillary, the molecular diffusion coefficient (D) can be rapidly derived. For example, for ovalbumin a D value of 0.759 x 10(-6) square centimeter per second is found versus a tabulated value of 0.776 x 10(-6) square centimeter per second (error, 2 percent). For hemoglobin a D value of 0.676 x 10(-6) square centimeter per second is obtained versus a literature value of 0.690 x 10(-6) square centimeter per second (error, 1.5 percent).     

Dislocations and Flux Pinning in YBa2Cu3O7-delta

Bulk YBa(2)Cu(3)O(7-delta) superconductors, under certain processing conditions such as melt texturing, exhibit a very high dislocation density of 10(9) to 10(10) per square centimeter. In addition, the density of low-angle grain boundaries in such samples can be significantly increased (to less than 700-nanometer spacing) through a dispersion of submicrometer-sized Y(2)BaCuO(5) inclusions. These defect densities are comparable to those in high critical current thin films as revealed through scanning tunneling microscopy, and yet the critical current densities in the bulk materials (at 77 kelvin and a field of 1 tesla for example) remain at a 10(4) amperes per square centimeter level, about two orders of magnitude lower than in thin films. The results imply that these defect density levels are not significant enough to explain the difference in flux pinning strength between the thin film and bulk materials. The observation of spiral-like growth of the superconductor phase in bulk Y-Ba-Cu-O is also reported.     

Spontaneous ordering of oxide nanostructures

We report the spontaneous formation of uniformly distributed arrays of "tips" (tall conical hillocks) upon oxidation of palladium (Pd) thin films. The formation of the palladium oxide tips depended on the thickness and granularity of the Pd film and on annealing and oxidation conditions. As the Pd film thickness increased from 40 to 200 nanometers, the average height of the tips increased from 0.5 to 1.2 micrometers, their height distribution became broader, and their density decreased from 55 x 10(6) to 12 x 10(6) per square centimeter. Enhanced photoelectron emission from locations corresponding to the tips suggests their possible use in field emission applications.     

Diamond genesis,seismic structure,and evolution of the Kaapvaal-Zimbabwe craton

The lithospheric mantle beneath the Kaapvaal-Zimbabwe craton of southern Africa shows variations in seismic P-wave velocity at depths within the diamond stability field that correlate with differences in the composition of diamonds and their syngenetic inclusions. Middle Archean mantle depletion events initiated craton keel formation and early harzburgitic diamond formation. Late Archean accretionary events involving an oceanic lithosphere component stabilized the craton and contributed a younger Archean generation of eclogitic diamonds. Subsequent Proterozoic tectonic and magmatic events altered the composition of the continental lithosphere and added new lherzolitic and eclogitic diamonds to the Archean diamond suite.     

汽相生长金刚石微粒及金刚石薄膜分析

用化学汽相沉积法已长出金刚石微粒及金刚石薄膜,并对它进行了扫描电镜观查,X-射线衍射分析,喇曼光谱分析,硬度测试,证明它确是金刚石并具有金刚石的性能.     

C, N, and noble gas isotopes in grain size separates of presolar diamonds from efremovka

Nanometer-size presolar diamonds from the Efremovka CV3 chondrite were physically separated into several grain size fractions by ultracentrifugation. The coarsest size fraction is the most enriched in carbon-12; the others have broadly similar carbon isotopic compositions. Measurement of noble gases shows that their concentration decreases with decreasing grain size. This effect is attributed to ion implantation. Such an episode could occur in the envelope of a supernova that produced the diamonds, or in interstellar space; in either case, ions with energies above a certain threshold pass completely through the smaller diamond grains without being captured. Concentrations of nitrogen show only minor variations with grain size, indicating a different mechanism of incorporation into the diamonds.     

钾肥对砂姜黑土不同粒型冬小麦穗粒发育及生理特性的影响

 采用盆栽和大田试验的方法 ,研究了钾肥对不同粒型冬小麦穗粒发育和生理特性的影响。结果表明 ,在砂姜黑土区 ,施钾肥能促进各粒型冬小麦的幼穗发育 ,增加穗粒数 ,提高 SOD酶活性、自由水含量和茎秆充实度 ,同时能有效地降低 MDA和叶片束缚水含量 ,延缓衰老 ,促进可溶性糖的转化与淀粉的积累。其中 ,施钾对小粒型品种温 2 540的影响最大。     

Evidence for multiple sources of diamond from primitive chondrites

Fine-grained diamonds, the most abundant form of circumstellar dust isolated from primitive meteorites, have elemental and isotopic characteristics that are dependent on the host meteorite type. Carbon isotopic compositions vary from -32 to -38 per mil, and nitrogen associated with the diamond changes in overall abundance by over a factor of four from 0.2 to 0.9 weight percent, between ordinary and CM2-type chondrites. Although the ratio of carbon to nitrogen evolves in a distinctive way during combustion of diamond separates, metamorphic degassing of nitrogen is not the main cause of the differences in nitrogen content. The data suggest that intrinsic differences must have been inherited by the diamonds at the time of their formation and that the diamonds were distributed heterogeneously in the solar nebula during condensation. However, the hypothesis that a distinct nitrogen carrier remains hidden within the diamond cannot be ruled out.     

Solar particle tracks in glass from the surveyor 3 spacecraft

A glass filter from Surveyor 3 has a surface density of approximately 1 x 10(6) tracks per square centimeter from heavy solar flare particles. The variation with depth is best fitted with a solar particle spectrum dN/dE = 2.42 x 10(6) E(-2) [in particles per square centimeter per year per steradian per (million electron volts per nucleon)], where E is the energy and N is the number of particles, from 2 million electron volts per nucleon to approximately 7 million electron volts per nucleon and dN/dE = 1.17 x 10(7) E(-3) at higher energies. Not much difference is observed between 0.5 and 5 micrometers, an indication that there is a lack of track-registering particles below 0.5 million electron volts per nucleon. The Surveyor data are compatible with track results in lunar rocks, provided an erosion rate of approximately 10(-7) centimeter per year is assumed for the latter. The results also suggest a small-scale erosion process in lunar rocks.     

A nucleation site and mechanism leading to epitaxial growth of diamond films

A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor deposition (CVD) is identified in high-resolution transmission electron microscopic images. Other sites in the same sample leading to polycrystalline growth, but deleterious to epitaxial CVD growth, are also described. A mechanism for the heteroepitaxial growth of diamond is suggested, in which etching of the nondiamond carbon binder exposes and removes nonadherent nanodiamond nuclei, leaving intact only those directly nucleated on the silicon substrate. This work enhances our understanding of diamond nucleation and heteroepitaxial growth and its potential applications.