Interlayer tunneling mechanism for high-tc superconductivity: comparison with C axis infrared experiments

Recent c axis-polarized infrared measurements in the high-transition temperature (high-T(c)) cuprate superconductor (La,Sr)(2)CuO(4) can be interpreted on the basis that the entire condensation energy comes from the interlayer Josephson coupling. This gives a parameter-free determination of penetration depth lambda and coherence length xi for this superconductor that are in agreement with experiment.     

Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices

Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and one superconducting (niobium titanium nitride) electrode. Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields on the order of 100 millitesla, we observe bound, midgap states at zero bias voltage. These bound states remain fixed to zero bias, even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.     

Quantum dynamics of a d-wave Josephson junction

Here we present the direct observation of macroscopic quantum properties in an all high-critical-temperature superconductor d-wave Josephson junction. Although dissipation caused by low-energy excitations is expected to strongly suppress macroscopic quantum effects, we demonstrate energy level quantization in our d-wave Josephson junction. The result indicates that the role of dissipation mechanisms in high-temperature superconductors has to be revised, and it may also have consequences for the class of solid-state "quiet" quantum bits with superior coherence time.     

Electronic liquid crystal state in the high-temperature superconductor YBa2Cu3O6.45

Electronic phases with symmetry properties matching those of conventional liquid crystals have recently been discovered in transport experiments on semiconductor heterostructures and metal oxides at millikelvin temperatures. We report the spontaneous onset of a one-dimensional, incommensurate modulation of the spin system in the high-transition-temperature superconductor YBa2Cu3O6.45 upon cooling below approximately 150 kelvin, whereas static magnetic order is absent above 2 kelvin. The evolution of this modulation with temperature and doping parallels that of the in-plane anisotropy of the resistivity, indicating an electronic nematic phase that is stable over a wide temperature range. The results suggest that soft spin fluctuations are a microscopic route toward electronic liquid crystals and that nematic order can coexist with high-temperature superconductivity in underdoped cuprates.     

c-axis electrodynamics as evidence for the interlayer theory of high-temperature superconductivity

In the interlayer theory of high-temperature superconductivity, the interlayer pair tunneling energy (similar to the Josephson or Lawrence-Doniach energy) is the motivation for superconductivity. This connection requires two experimentally verifiable identities: the coherent normal-state conductance must be smaller than the "Josephson" coupling energy, and the Josephson coupling energy must be equal to the condensation energy of the superconductor. The first condition is well satisfied in the only case that is relevant, (La, Sr)2CuO4, but the second condition has been questioned. It is satisfied for all dopings in (La,Sr)2CuO4 and also in optimally doped Hg(Ba)2CuO5, which was measured recently, but seems to be strongly violated in measurements on single crystals of Tl2Ba2CuO6.     

Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide

The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field-induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O(2), by means of electric double-layer gating with high-density electron accumulation (>10(14) per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.     

Suppressing spin qubit dephasing by nuclear state preparation

Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant component of nuclear spin fluctuations below its equilibrium value by a factor of approximately 70, extending the inhomogeneous dephasing time for the two-electron spin state beyond 1 microsecond. The nuclear state can be readily prepared by electrical gate manipulation and persists for more than 10 seconds.     

Toward the realization of a josephson computer

High-quality Josephson junctions, with both electrodes made from niobium and with an aluminum-oxide insulating barrier, were introduced in 1983. This niobium junction is very stable, reliable, controllable, and reproducible. Because of these excellent characteristics, these junctions can be applied to large-scale integrated (LSI) circuits, such as microprocessors having a few thousand gates and a few kilobits of memory. These circuits operate much faster and consume less power than any semiconductor circuit now available. Integrated Josephson circuits are now being tested in a closed-cycle refrigerator. The next step is to design a special-purpose, small-scale Josephson computer and to demonstrate its high performance.     

Room-temperature ultraviolet nanowire nanolasers

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.     

Functional nanoscale electronic devices assembled using silicon nanowire building blocks

Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.     

Josephson junctions with tunable weak links

The electrical properties of organic molecular crystals, such as polyacenes or C60, can be tuned from insulating to superconducting by application of an electric field. By structuring the gate electrode of such a field-effect switch, the charge carrier density, and therefore also the superfluid density, can be modulated. Hence, weak links that behave like Josephson junctions can be fabricated between two superconducting regions. The coupling between the superconducting regions can be tuned and controlled over a wide range by the applied gate bias. Such devices might be used in superconducting circuits, and they are a useful scientific tool to study superconducting material parameters, such as the superconducting gap, as a function of carrier concentration or transition temperature.     

Ultrahigh-density nanowire lattices and circuits

We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits. The technique is based on translating thin film growth thickness control into planar wire arrays. Nanowires were fabricated with diameters and pitches (center-to-center distances) as small as 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 10(6)), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 10(11) per square centimeter. The nanowires can also be used in nanomechanical devices; a high-frequency nanomechanical resonator is demonstrated.     

Spontaneous organization of single CdTe nanoparticles into luminescent nanowires

Nanoparticles of CdTe were found to spontaneously reorganize into crystalline nanowires upon controlled removal of the protective shell of organic stabilizer. The intermediate step in the nanowire formation was found to be pearl-necklace aggregates. Strong dipole-dipole interaction is believed to be the driving force of nanoparticle self-organization. The linear aggregates subsequently recrystallized into nanowires whose diameter was determined by the diameter of the nanoparticles. The produced nanowires have high aspect ratio, uniformity, and optical activity. These findings demonstrate the collective behavior of nanoparticles as well as a convenient, simple technique for production of one-dimensional semiconductor colloids suitable for subsequent processing into quantum-confined superstructures, materials, and devices.     

Light-induced superconductivity in a stripe-ordered cuprate

One of the most intriguing features of some high-temperature cuprate superconductors is the interplay between one-dimensional "striped" spin order and charge order, and superconductivity. We used mid-infrared femtosecond pulses to transform one such stripe-ordered compound, nonsuperconducting La(1.675)Eu(0.2)Sr(0.125)CuO(4), into a transient three-dimensional superconductor. The emergence of coherent interlayer transport was evidenced by the prompt appearance of a Josephson plasma resonance in the c-axis optical properties. An upper limit for the time scale needed to form the superconducting phase is estimated to be 1 to 2 picoseconds, which is significantly faster than expected. This places stringent new constraints on our understanding of stripe order and its relation to superconductivity.     

一维梯度铁纳米线的制备与表征

用氧化铝模板法和电化学沉积法控制合成了一维梯度直径铁纳米线.通过匀速减小氧化铝模板二次氧化的氧化电压,获得了具有一维梯度孔径的氧化铝模板,在此模板中利用电化学沉积法生长了具有一维梯度直径的铁纳米线.用扫描电镜和透射电镜对梯度直径铁纳米线进行表征,结果显示:铁纳米线呈细长锥形结构;沿长度方向,铁纳米线的直径具有梯直径变化,直径变化范围为12~31 nm.     

A gate-controlled bidirectional spin filter using quantum coherence

We demonstrate a quantum coherent electron spin filter by directly measuring the spin polarization of emitted current. The spin filter consists of an open quantum dot in an in-plane magnetic field; the in-plane field gives the two spin directions different Fermi wavelengths resulting in spin-dependent quantum interference of transport through the device. The gate voltage is used to select the preferentially transmitted spin, thus setting the polarity of the filter. This provides a fully electrical method for the creation and detection of spin-polarized currents. Polarizations of emitted current as high as 70% for both spin directions (either aligned or anti-aligned with the external field) are observed.     

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.     

Emission of coherent THz radiation from superconductors

Compact solid-state sources of terahertz (THz) radiation are being sought for sensing, imaging, and spectroscopy applications across the physical and biological sciences. We demonstrate that coherent continuous-wave THz radiation of sizable power can be extracted from intrinsic Josephson junctions in the layered high-temperature superconductor Bi2Sr2CaCu2O8. In analogy to a laser cavity, the excitation of an electromagnetic cavity resonance inside the sample generates a macroscopic coherent state in which a large number of junctions are synchronized to oscillate in phase. The emission power is found to increase as the square of the number of junctions reaching values of 0.5 microwatt at frequencies up to 0.85 THz, and persists up to approximately 50 kelvin. These results should stimulate the development of superconducting compact sources of THz radiation.     

Detection of quantum noise from an electrically driven two-level system

The electrical noise of mesoscopic devices can be strongly influenced by the quantum motion of electrons. To probe this effect, we have measured the current fluctuations at high frequency (5 to 90 gigahertz) using a superconductor-insulator-superconductor tunnel junction as an on-chip spectrum analyzer. By coupling this frequency-resolved noise detector to a quantum device, we can measure the high-frequency, nonsymmetrized noise as demonstrated for a Josephson junction. The same scheme is used to detect the current fluctuations arising from coherent charge oscillations in a two-level system, a superconducting charge qubit. A narrow band peak is observed in the spectral noise density at the frequency of the coherent charge oscillations.     

Silicon device scaling to the sub-10-nm regime

In the next decade, advances in complementary metal-oxide semiconductor fabrication will lead to devices with gate lengths (the region in the device that switches the current flow on and off) below 10 nanometers (nm), as compared with current gate lengths in chips that are now about 50 nm. However, conventional scaling will no longer be sufficient to continue device performance by creating smaller transistors. Alternatives that are being pursued include new device geometries such as ultrathin channel structures to control capacitive losses and multiple gates to better control leakage pathways. Improvement in device speed by enhancing the mobility of charge carriers may be obtained with strain engineering and the use of different crystal orientations. Here, we discuss challenges and possible solutions for continued silicon device performance trends down to the sub-10-nm gate regimes.