Epitaxial cuprate superconductor/ferroelectric heterostructures

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.     

剩磁效应对SmFe_2/PZT多铁异质结构动态磁机特性及磁场传感特性的影响

分析和测试了超磁致伸缩材料剩磁效应对动态磁机特性以及磁场传感特性的影响,提出了一种具有自偏置功能的SmFe_2/PZT多铁异质结构。利用负超磁致伸缩材料SmFe_2兼有明显铁磁性和磁致伸缩性双重特型,在材料磁滞和剩磁的作用下其压磁系数、杨氏模量及品质因数等反映动态磁机特性的参数都表现出滞回特性,并从微磁学180°畴璧能量的角度分析了各个参数滞回特性产生的根源。研究结果表明,仅依靠材料剩磁的作用下,SmFe_2/PZT异质结构在反谐振频率点120 kHz和非反谐振频率点1 kHz的灵敏度分别为0.86 V·Oe~(-1)和1.2 mV·Oe~(-1),且磁电电压输出与施加激励电流之间呈近似线性变化关系,具有较好的线性度。所提出的SmFe_2/PZT多铁异质结构摆脱了传统磁电传感器对外加永磁体作为偏置磁场的束缚,减小了封装磁传感器件的体积,有利于实现器件的微型化,并具有制作简单、成本低以及灵敏度高等优点。     

Ferroelectricity at the nanoscale: local polarization in oxide thin films and heterostructures

Ferroelectric oxide materials have offered a tantalizing potential for applications since the discovery of ferroelectric perovskites more than 50 years ago. Their switchable electric polarization is ideal for use in devices for memory storage and integrated microelectronics, but progress has long been hampered by difficulties in materials processing. Recent breakthroughs in the synthesis of complex oxides have brought the field to an entirely new level, in which complex artificial oxide structures can be realized with an atomic-level precision comparable to that well known for semiconductor heterostructures. Not only can the necessary high-quality ferroelectric films now be grown for new device capabilities, but ferroelectrics can be combined with other functional oxides, such as high-temperature superconductors and magnetic oxides, to create multifunctional materials and devices. Moreover, the shrinking of the relevant lengths to the nanoscale produces new physical phenomena. Real-space characterization and manipulation of the structure and properties at atomic scales involves new kinds of local probes and a key role for first-principles theory.     

ZnO/Bi_(3.6)Eu_(0.4)Ti_3O_(12)纳米复合薄膜的光致发光性能

采用化学溶液沉积法在石英衬底上制备纳米颗粒ZnO/Bi3.6Eu0.4Ti3O12(BEu T)铁电复合薄膜.光致发光研究结果表明,通过引入ZnO纳米颗粒,BEuT薄膜中Eu3+的发光大大增强,其强度大约是单纯BEu T薄膜的35倍.这种发光强度的极大改善归因于从ZnO到Eu3+的能量传递效率高.     

Direct observation of percolation in a manganite thin film

Upon cooling, the isolated ferromagnetic domains in thin films of La0.33Pr0.34Ca0.33MnO3 start to grow and merge at the metal-insulator transition temperature TP1, leading to a steep drop in resistivity, and continue to grow far below TP1. In contrast, upon warming, the ferromagnetic domain size remains unchanged until near the transition temperature. The jump in the resistivity results from the decrease in the average magnetization. The ferromagnetic domains almost disappear at a temperature TP2 higher than TP1, showing a local magnetic hysteresis in agreement with the resistivity hysteresis. Even well above TP2, some ferromagnetic domains with higher transition temperatures are observed, indicating magnetic inhomogeneity. These results may shed more light on the origin of the magnetoresistance in these materials.     

PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically "activated" to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 10(3) to 10(4); and with current density approaching 3 x 10(4) amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.     

BiFeO3-SrBi2Nb2O9陶瓷的表征及复阻抗研究

对单相层状钙钛矿结构的xBiFeO3-(1-x)SrBi2Nb2O9(x=0,0.1)陶瓷进行了表征和复阻抗分析。结果表明,BiFeO3的掺入降低了SBN的烧结温度,陶瓷晶粒尺寸减小,致密度提高;在较高温度时,SBFN的电学响应主要来源于晶粒效应,而SBN的电学响应则是晶粒效应、晶界效应和电极与介质界面效应的共同作用。     

Epitaxial and Smooth Films of a-Axis YBa2Cu3O7

YBa(2)Cu(3)O(7) films have been grown epitaxially on SrTiO(3) (100) and LaAlO(3) (100) substrates with nearly pure a-axis orientation and with transition temperature T(c) (R = 0) of 85 K. A unique feature of these films is their smooth surface. These smooth surfaces enable the growth of short-period superlattices with well-defined modulations. The films are untwinned and the grains grow with their c-axis along one of two perpendicular directions on the substrate ([100] or [010]). The fabrication of sandwich-type Josephson junctions with good characteristics may now be possible because unlike c-axis-oriented films, the superconducting coherence length of these smooth films is appreciably large perpendicular to their surfaces.     

BiFeO3磁性纳米粒子催化H2O2降解甲基橙的研究

通过溶胶-凝胶法成功合成了铁酸铋磁性纳米粒子(BiFeO3 MNPs),X-射线衍射结果表明,得到的BiFeO3具有高度结晶和单相钙钛矿结构.将其用于催化过氧化氢降解偶氮染料甲基橙(MO)的研究,探讨了各因素对去除率的影响;结果表明,在不调pH值的情况下,当BiFeO3 MNPs质量浓度为1.0 g/L、过氧化氢浓度为0.2 mol/L、温度为30℃、反应时间为24 h时,对MO的去除率可达到90％.     

基于梯度扩散薄膜技术评估稻田土壤中镉的生物有效性

为了给重金属污染农田土壤的安全性评估提供方法学指导,以稻田土壤-水稻体系为对象,通过比较化学提取法(土壤溶液法和0.01 mol·L~(-1)Ca Cl2提取法)和梯度扩散薄膜技术(DGT)所提取的有效态镉(Cd)含量与水稻谷粒中Cd含量(0.06~2.16 mg·kg~(-1))的相关关系,阐述DGT是否能更准确评估Cd的生物有效性及其作用机理。结果表明,土壤Cd全量与谷粒中Cd含量、几种有效态Cd提取量均未显示出显著相关性,不能真实反映Cd的生物有效性。DGT提取的Cd含量与谷粒Cd含量的相关性系数(R_(线性)~2=0.89和R_(曲线)~2=0.94)高于土壤溶液法(R_(线性)~2=0.87和R_(曲线)~2=0.92)和0.01 mol·L~(-1)Ca Cl2提取法(R_(线性)~2=0.80和R_(曲线)~2=0.83),R值分析表明DGT技术模拟了根部吸收土壤Cd过程中土壤固-液释放补给动态过程。因此,与传统化学提取法相比,DGT技术能更好地预测Cd污染土壤(0.31~10.64 mg·kg~(-1))中Cd的生物有效性。     

Colossal ionic conductivity at interfaces of epitaxial ZrO2:Y2O3/SrTiO3 heterostructures

The search for electrolyte materials with high oxygen conductivities is a key step toward reducing the operation temperature of fuel cells, which is currently above 700 degrees C. We report a high lateral ionic conductivity, showing up to eight orders of magnitude enhancement near room temperature, in yttria-stabilized zirconia (YSZ)/strontium titanate epitaxial heterostructures. The enhancement of the conductivity is observed, along with a YSZ layer thickness-independent conductance, showing that it is an interface process. We propose that the atomic reconstruction at the interface between highly dissimilar structures (such as fluorite and perovskite) provides both a large number of carriers and a high-mobility plane, yielding colossal values of the ionic conductivity.     

Enhancement of ferroelectricity in strained BaTiO3 thin films

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.     

基于薄膜传感器的横轴流脱粒滚筒实时喂入量测量系统设计

为实现水稻联合收割机脱粒滚筒实时喂入量监测,基于薄膜传感器设计了一种脱粒滚筒喂入量测量系统,其原理为通过薄膜传感器测出滚筒顶盖侧边因喂入量变化而产生的受力变化。以额定喂入量为0.8kg/s的小型横轴流脱粒滚筒为试验对象,以成熟的晚籼98和传奇丰两优1号水稻为主要试验材料,在转速分别为650、800、950、1 100r/min、喂入量为0.2～0.8kg/s的条件下开展台架试验,结果显示:薄膜传感器采集的实时信号与实时喂入量显著相关,对喂入量和传感器信号进行线性关系拟合,拟合效果较好。试验结果表明,设计的测量系统可以通过传感器信号对喂入量进行测量。     

Single-Crystal Epitaxial Thin Films of the Isotropic Metallic Oxides Sr1-xCaxRuO3 (0 le x le 1)

Single-crystal epitaxial thin films of the isotropic metallic oxides Sr1-xCaxRuO(3) (0 相似文献   

Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO2/Pb(Zr0.52Ti0.48)O3 Heterostructures

A ferroelectric field effect in epitaxial thin film SrCuO(2)/Pb(Zr(0.52)Ti(0.48))O(3) heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO(2) layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr(0.52)Ti(0.48))O(3) layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO(2) and Pb(Zr(0.52)Ti(0.48))O(3). This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO(2).