Ultrahigh-density nanowire lattices and circuits

We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits. The technique is based on translating thin film growth thickness control into planar wire arrays. Nanowires were fabricated with diameters and pitches (center-to-center distances) as small as 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 10(6)), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 10(11) per square centimeter. The nanowires can also be used in nanomechanical devices; a high-frequency nanomechanical resonator is demonstrated.     

Room-temperature ultraviolet nanowire nanolasers

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.     

Nanowire array composites

Long, nanometer-size metallic wires can be synthesized by injection of the conducting melt into nanochannel insulating plates. Large-area arrays of parallel wires 200 nanometers in diameter and 50 micrometers long with a packing density of 5 x 10(8) per square centimeter have been fabricated in this way. When charged, the ends of the wires generate strong, short-range electric fields. The nanowire electric fields have been imaged at high spatial resolution with a scanning force microscope.     

A laser ablation method for the synthesis of crystalline semiconductor nanowires

A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.     

String tension and stability of magic tip-suspended nanowires

Multishell helical gold nanowires were recently imaged by electron microscopy. We show theoretically that the contact with the gold tips at either end of the wire plays a crucial role and that local minima in the string tension rather than the total wire free energy determine the nanowire stability. Density functional electronic structure calculations of the simplest and thinnest coaxial gold and silver wires of variable radius and chirality were carried out. We found a string tension minimum for a single-tube gold nanowire that is chiral and consists of seven strands, in striking agreement with observation. In contrast, no such minimum was found for silver, where the s-d competition leading to surface reconstruction is lacking.     

Molybdenum nanowires by electrodeposition

Metallic molybdenum (Mo(o)) wires with diameters ranging from 15 nanometers to 1.0 micrometers and lengths of up to 500 micrometers (0.5 millimeters) were prepared in a two-step procedure. Molybdenum oxide wires were electrodeposited selectively at step edges and then reduced in hydrogen gas at 500 degrees C to yield Mo(o). The hemicylindrical wires prepared by this technique were self-uniform, and the wires prepared in a particular electrodeposition (in batches of 10(5) to 10(7)) were narrowly distributed in diameter. Wires were obtained size selectively because the mean wire diameter was directly proportional to the square root of the electrolysis time. The metal nanowires could be embedded in a polystyrene film and lifted off the graphite electrode surface. The conductivity and mechanical resiliency of individual embedded wires were similar to those of bulk molybdenum.     

Subnanometer-Diameter Wires Isolated in a Polymer Matrix by Fast Polymerization

The preparation and analysis of inorganic-organic polymer nanocomposites consisting of inorganic nanowires and multiwire "cables" in a random-coil organic polymer host is reported. Dissolution of inorganic (LiMo3Se3)n wires in a strongly coordinating monomer, vinylene carbonate, and the use of a rapid polymerization in the presence of a cross-linking agent produce nanocomposites without phase separation. Polymerization of dilute solutions yields a material containing mostly (Mo3Se3(-))n mono- and biwires, 6 to 20 angstroms in diameter and 50 to 100 nanometers long. Polymerization of more concentrated liquid crystalline solutions yields a nanocomposite containing oriented multiwire cables, 20 to 40 angstroms in diameter and up to 1500 nanometers long, that display optical anisotropy and electrical conductivity.     

Encoding electronic properties by synthesis of axial modulation-doped silicon nanowires

We describe the successful synthesis of modulation-doped silicon nanowires by achieving pure axial elongation without radial overcoating during the growth process. Scanning gate microscopy shows that the key properties of the modulated structures-including the number, size, and period of the differentially doped regions-are defined in a controllable manner during synthesis, and moreover, that feature sizes to less than 50 nanometers are possible. Electronic devices fabricated with designed modulation-doped nanowire structures demonstrate their potential for lithography-independent address decoders and tunable, coupled quantum dots in which changes in electronic properties are encoded by synthesis rather than created by conventional lithography-based techniques.     

Ultrathin single-crystalline silver nanowire arrays formed in an ambient solution phase

We report the synthesis of single-crystalline silver nanowires of atomic dimensions. The ultrathin silver wires with 0.4 nanometer width grow up to micrometer-scale length inside the pores of self-assembled calix[4]hydroquinone nanotubes by electro-/photochemical redox reaction in an ambient aqueous phase. The present subnanowires are very stable under ambient air and aqueous environments, unlike previously reported metal wires of approximately 1 nanometer diameter, which existed only transiently in ultrahigh vacuum. The wires exist as coherently oriented three-dimensional arrays of ultrahigh density and thus could be used as model systems for investigating one-dimensional phenomena and as nanoconnectors for designing nanoelectronic devices.     

Electrical resistance of long conjugated molecular wires

The charge transport mechanism of a wire can be revealed by how its electrical resistance varies with length. We have measured the resistance and current-voltage characteristics of conjugated molecular wires ranging in length from 1 to 7 nanometers, connected between metal electrodes. We observe the theoretically predicted change in direct-current transport from tunneling to hopping as a function of systematically controlled wire length. We also demonstrate that site-specific disruption of conjugation in the wires greatly increases resistance in the hopping regime but has only a small effect in the tunneling regime. These nanoscale transport measurements elucidate the role of molecular length and bond architecture on molecular conductivity and open opportunities for greater understanding of electrical transport in conjugated polymer films.     

不同成分和结构的CoCu纳米线阵列的沉积规律

利用直流电化学沉积法通过调节沉积参数在多孔阳极氧化铝模板中沉积制备出了一系列不同成分和结构的磁性CoCu纳米线阵列.XRD和TEM的结果显示,沉积溶液的pH值对纳米线的成分比例和相结构的影响表现出了明显的规律性.笔者认为pH值对纳米线成分比例和相结构的控制主要源于它对溶液中Co^2＋沉积速率的影响.基于此沉积规律,沉积出了立方结构与六角结构共存的复相结构的CoCu纳米线.由于复相结构的CoCu纳米线中包含较多的相边界,因此它们具有远好于单相结构CoCu纳米线的磁性,其矫顽力和剩磁比均是单相结构纳米线的3倍.     

Properties of metallic nanowires: from conductance quantization to localization

Material structures of reduced dimensions exhibit electrical and mechanical properties different from those in the bulk. Measurements of room-temperature electronic transport in pulled metallic nanowires are presented, demonstrating that the conductance characteristics depend on the length, lateral dimensions, state and degree of disorder, and elongation mechanism of the wire. Conductance during the elongation of short wires (length l approximately 50 angstroms) exhibits periodic quantization steps with characteristic dips, correlating with the order-disorder states of layers of atoms in the wire predicted by molecular dynamics simulations. The resistance R of wires as long as l approximately 400 angstroms exhibits localization characteristics with In R(l) approximately l(2).     

MATERIALS SCIENCE: Weird Gold Nanowires

When the dimensions of matter are reduced to the nanometer scale and beyond, strange properties often emerge. In their Perspective, Tosatti and Prestipino discuss the weird gold nanowire structures reported by Kondo and Takayanagi. They explain why the wires may be helical and only form certain "magic" sizes. Other metals may form similarly strange structures with unusual properties.     

Direct-current nanogenerator driven by ultrasonic waves

We have developed a nanowire nanogenerator that is driven by an ultrasonic wave to produce continuous direct-current output. The nanogenerator was fabricated with vertically aligned zinc oxide nanowire arrays that were placed beneath a zigzag metal electrode with a small gap. The wave drives the electrode up and down to bend and/or vibrate the nanowires. A piezoelectric-semiconducting coupling process converts mechanical energy into electricity. The zigzag electrode acts as an array of parallel integrated metal tips that simultaneously and continuously create, collect, and output electricity from all of the nanowires. The approach presents an adaptable, mobile, and cost-effective technology for harvesting energy from the environment, and it offers a potential solution for powering nanodevices and nanosystems.     

Ultrahigh-density nanowire arrays grown in self-assembled diblock copolymer templates

We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.     

Dislocation-driven nanowire growth and Eshelby twist

Hierarchical nanostructures of lead sulfide nanowires resembling pine trees were synthesized by chemical vapor deposition. Structural characterization revealed a screwlike dislocation in the nanowire trunks with helically rotating epitaxial branch nanowires. It is suggested that the screw component of an axial dislocation provides the self-perpetuating steps to enable one-dimensional crystal growth, in contrast to mechanisms that require metal catalysts. The rotating trunks and branches are the consequence of the Eshelby twist of screw dislocations with a dislocation Burgers vector along the 110 directions having an estimated magnitude of 6 +/- 2 angstroms for the screw component. The results confirm the Eshelby theory of dislocations, and the proposed nanowire growth mechanism could be general to many materials.     

Directed assembly of one-dimensional nanostructures into functional networks

One-dimensional nanostructures, such as nanowires and nanotubes, represent the smallest dimension for efficient transport of electrons and excitons and thus are ideal building blocks for hierarchical assembly of functional nanoscale electronic and photonic structures. We report an approach for the hierarchical assembly of one-dimensional nanostructures into well-defined functional networks. We show that nanowires can be assembled into parallel arrays with control of the average separation and, by combining fluidic alignment with surface-patterning techniques, that it is also possible to control periodicity. In addition, complex crossed nanowire arrays can be prepared with layer-by-layer assembly with different flow directions for sequential steps. Transport studies show that the crossed nanowire arrays form electrically conducting networks, with individually addressable device function at each cross point.     

Fe-Co-P非晶态与晶态纳米线的磁性研究

[目的]研究双过渡金属-类金属的三元合金纳米线各成分的改变对磁学性质的影响。[方法]在氧化铝模板中用电化学沉积法制备2种体系的Fe-Co-P三元合金纳米线。[结果]用扫描电子显微镜和透射电子显微镜观测氧化铝模板和纳米线的形貌。选区电子衍射和X射线衍射结果表明,(Fe1-xCox)0.88P0.12纳米线为非晶结构,而(Fe1-xCox)0.92P0.08纳米线近似为晶态结构。用振动样品磁强计和穆斯堡尔谱仪研究了非晶态体系和晶态体系在室温下的宏观和微观磁性。随Co含量x的变化,每个体系磁参量的变化趋势基本相似,而当x相同时两体系的磁学性质又有所不同。[结论]纳米线中非晶体系的形状各向异性比晶态更明显,更适宜用于垂直磁记录中。     

Magnetic domain-wall racetrack memory

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.     

Submicrometer patterning of charge in thin-film electrets

Thin-film electrets have been patterned with trapped charge with submicrometer resolution using a flexible, electrically conductive electrode. A poly(dimethylsiloxane) stamp, patterned in bas-relief and supporting an 80-nanometer-thick gold film, is brought into contact with an 80-nanometer-thick film of poly(methylmethacrylate) supported on n-doped silicon. A voltage pulse between the gold film and the silicon transfers charge at the contact areas between the gold and the polymer electret. Areas as large as 1 square centimeter were patterned with trapped charges at a resolution better than 150 nanometers in less than 20 seconds. This process provides a new method for patterning; it suggests possible methods for high-density, charge-based data storage and for high-resolution charge-based printing.