Polymer gate dielectric surface viscoelasticity modulates pentacene transistor performance

Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials. We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) performance discontinuities at well-defined growth temperatures. The changes reflect the higher chain mobility of the dielectric in its rubbery state and are independent of dielectric film thickness. Optimization of organic TFT performance must recognize this fundamental buried interface viscoelasticity effect, which is detectable in the current-voltage response.     

Designed synthesis of 3D covalent organic frameworks

Three-dimensional covalent organic frameworks (3D COFs) were synthesized by targeting two nets based on triangular and tetrahedral nodes: ctn and bor. The respective 3D COFs were synthesized as crystalline solids by condensation reactions of tetrahedral tetra(4-dihydroxyborylphenyl) methane or tetra(4-dihydroxyborylphenyl)silane and by co-condensation of triangular 2,3,6,7,10,11-hexahydroxytriphenylene. Because these materials are entirely constructed from strong covalent bonds (C-C, C-O, C-B, and B-O), they have high thermal stabilities (400 degrees to 500 degrees C), and they also have high surface areas (3472 and 4210 square meters per gram for COF-102 and COF-103, respectively) and extremely low densities (0.17 grams per cubic centimeter).     

MgB2 superconducting thin films with a transition temperature of 39 kelvin

We fabricated high-quality c axis-oriented epitaxial MgB2 thin films using a pulsed laser deposition technique. The thin films grown on (1 i 0 2) Al2O3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is approximately 6 x 10(6) amperes per cubic centimeter at 5 kelvin and approximately 3 x 10(5) amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, x-ray diffraction patterns indicate a highly c axis-oriented crystal structure perpendicular to the substrate surface.     

Intra- and intermolecular band dispersion in an organic crystal

The high crystallinity of many inorganic materials allows their band structures to be determined through angle-resolved photoemission spectroscopy (ARPES). Similar studies of conjugated organic molecules of interest in optoelectronics are often hampered by difficulties in growing well-ordered and well-oriented crystals or films. We have grown crystalline films of uniaxially oriented sexiphenyl molecules and obtained ARPES data. Supported by density-functional calculations, we show that, in the direction parallel to the principal molecular axis, a quasi-one-dimensional band structure of a system of well-defined finite size develops out of individual molecular orbitals. In contrast, perpendicular to the molecules, the band structure reflects the periodicity of the molecular crystal, and continuous bands with a large dispersion were observed.     

Atomic-Scale Images of the Growth Surface of Ca1-xSrxCuO2 Thin Films

The surface microstructure of c-axis (Ca,Sr)CuO(2) thin films, grown by laser molecular beam epitaxy on SrTiO(3)(001) substrates, was studied by ultrahigh-vacuum scanning tunneling microscopy (STM). Images were obtained for codeposited Ca1-xSrxCuO(2) thin films, which show a layered-type growth mode. The surfaces consist of atomically flat terraces separated by steps that are one unit cell high. A pronounced dependence of the growth mechanism on the Sr/Ca ratio of the films was observed. Atomic resolution STM images of the CuO(2) sheets in the ab plane show a square lattice with an in-plane spacing of 4 angstroms; the lattice contains different concentrations of point defects, depending on the polarity of the sample-tip bias.     

Synthesis of zeolite as ordered multicrystal arrays

Zeolites are crystalline nanoporous aluminosilicates widely used in industry. In order for zeolites to find applications as innovative materials, they need to be organized into large two- and three-dimensional (2D and 3D) arrays. We report that uniformly aligned polyurethane films can serve as templates for the synthesis of uniformly aligned 2D and possibly 3D arrays of silicalite-1 crystals, in which the orientations of the crystals are controlled by the nature of the polymers. We propose that the supramolecularly organized organic-inorganic composites that consist of the hydrolyzed organic products and the seed crystals are responsible for this phenomenon.     

Phylogenetic Analysis on SLG and SRK Genes in Brassica and Raphanus

S-locus genes were cloned from three Brassica napus and three B. campestris lines by using PCR walking and homologue sequence methods. A phylogenetic gene tree was constructed based on the six cloned genes and fifty-one previously reported SLG/SRK genes of Brassica and Raphanus. The SLGs from R. sativus were dispersed in the phylogenetic tree intermingling with SLG/SRKs from B. oleracea, B. napus and B. campestris. The SLG/SRK genes of class Ⅱ clustered independently in one group. The SLG/SRK genes of class Ⅰ showed to be more divergent than class Ⅱ genes. These results suggested that the divergence of class Ⅰ and class Ⅱ should have occurred before the differentiation of the genera Brassica and Raphanus. In addition, SLG and SRK of the same S haplotypes belonged to the same class. It suggested that class-Ⅰ and class-Ⅱ group divergence occurred first, and then SLG and SRK diverged. The three SC SRK genes from B. napus and B. campestris were grouped into one cluster, displaying difference from the SC SLG of B.oleracea. These three SC SRK genes were close to SI SRK of SI1300, SI271 and guanyou in phylogenetic relationships.These results indicated that SC and SI genes diverged more recently. It is not clear yet whether the differentiation of SC and SI genes was earlier than the differentiation of Brassica and Raphanus. Studies based on more genes are necessary for a comprehensive elucidation of the phylogenetic relationships in Brassicaceae.     

甘蓝自交不亲和细胞信号转导的功能基因研究进展

自交不亲和性是开花植物防止近亲繁殖而广泛存在的一种遗传屏障,在育种工作中意义重大,它在遗传上受一个带有复等位基因的多态性S基因座所控制。本文综述了近年来在甘蓝自交不亲和信号转导途径中相关功能基因的研究进展。SRK基因和SP11/SCR基因是控制甘蓝自交不亲和性的两个关键因子。SRK基因是雌蕊柱头中自交不亲和反应的专一决定因子,编码SP11/SCR基因的蛋白在花药壁和花粉中特异表达。编码SLG基因的蛋白在自交不亲和反应中起增强SRK活性的作用。另外也对信号传导途径中下游蛋白质的作用模式作了展望。     

Porous, crystalline, covalent organic frameworks

Covalent organic frameworks (COFs) have been designed and successfully synthesized by condensation reactions of phenyl diboronic acid {C6H4[B(OH)2]2} and hexahydroxytriphenylene [C18H6(OH)6]. Powder x-ray diffraction studies of the highly crystalline products (C3H2BO)6.(C9H12)1 (COF-1) and C9H4BO2 (COF-5) revealed expanded porous graphitic layers that are either staggered (COF-1, P6(3)/mmc) or eclipsed (COF-5, P6/mmm). Their crystal structures are entirely held by strong bonds between B, C, and O atoms to form rigid porous architectures with pore sizes ranging from 7 to 27 angstroms. COF-1 and COF-5 exhibit high thermal stability (to temperatures up to 500 degrees to 600 degrees C), permanent porosity, and high surface areas (711 and 1590 square meters per gram, respectively).     

Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices

We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene layers by using high-density, vertically aligned zinc oxide nanowalls as an intermediate layer. The nitride thin films on graphene layers show excellent optical characteristics at room temperature, such as stimulated emission. As one of the examples for device applications, LEDs that emit strong electroluminescence emission under room illumination were fabricated. Furthermore, the layered structure of a graphene substrate made it possible to easily transfer GaN thin films and GaN-based LEDs onto foreign substrates such as glass, metal, or plastic.     

Growth Mechanism of Sputtered Films of YBa2Cu3O7 Studied by Scanning Tunneling Microscopy

The surface microstructures of c-axis-oriented films of YBa(2)Cu(3)O(7), deposited by off-axis magnetron sputtering on MgO and SrTiO(3) single crystal (100) substrates, have been investigated with scanning tunneling microscopy and atomic force microscopy. There is strong evidence that the films nucleate as islands and grow by adding material to the edge of a spirally rising step. This results in columnar grains, each of which contains a screw dislocation at its center. This microstructure may be of significance in determining superconducting properties such as critical current, and represents a significant difference between thin films (especially those grown in situ) and bulk materials.     

Epitaxial and Smooth Films of a-Axis YBa2Cu3O7

YBa(2)Cu(3)O(7) films have been grown epitaxially on SrTiO(3) (100) and LaAlO(3) (100) substrates with nearly pure a-axis orientation and with transition temperature T(c) (R = 0) of 85 K. A unique feature of these films is their smooth surface. These smooth surfaces enable the growth of short-period superlattices with well-defined modulations. The films are untwinned and the grains grow with their c-axis along one of two perpendicular directions on the substrate ([100] or [010]). The fabrication of sandwich-type Josephson junctions with good characteristics may now be possible because unlike c-axis-oriented films, the superconducting coherence length of these smooth films is appreciably large perpendicular to their surfaces.     

High-performance high-TC superconducting wires

We demonstrated short segments of a superconducting wire that meets or exceeds performance requirements for many large-scale applications of high-temperature superconducting materials, especially those requiring a high supercurrent and/or a high engineering critical current density in applied magnetic fields. The performance requirements for these varied applications were met in 3-micrometer-thick YBa2Cu3O(7-delta) films epitaxially grown via pulsed laser ablation on rolling assisted biaxially textured substrates. Enhancements of the critical current in self-field as well as excellent retention of this current in high applied magnetic fields were achieved in the thick films via incorporation of a periodic array of extended columnar defects, composed of self-aligned nanodots of nonsuperconducting material extending through the entire thickness of the film. These columnar defects are highly effective in pinning the superconducting vortices or flux lines, thereby resulting in the substantially enhanced performance of this wire.     

Coherent electronic fringe structure in incommensurate silver-silicon quantum wells

Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.     

Thousandfold change in resistivity in magnetoresistive la-ca-mn-o films

A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of perovskite-like La(0.67)Ca(0.33)MnOx. Epitaxial films that are grown on LaAIO(3) substrates by laser ablation and suitably heat treated exhibit magnetoresistance values as high as 127,000 percent near 77 kelvin and approximately 1300 percent near room temperature. Such a phenomenon could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized. Possible mechanisms for the observed effect are discussed.     

不同土壤管理对茶园氮磷径流损失的影响

为掌握不同土壤管理对茶园氮磷径流损失的影响，为茶园管理提供基础，在千岛湖地区的茶园中分别设置了常规施肥（CF）、50%有机肥替代化肥（COF）、在CF基础上施用调理剂（CFC）、在CF基础上覆盖稻草（CFM）等 4个处理3次重复的试验，在自然降雨条件下动态监测了不同处理的径流量、径流水中氮、磷浓度并计算氮、磷流失量。结果表明，茶园地表径流量介于1 049.3～1 417.3 m³·hm^-2，稻草覆盖显著降低了茶园地表径流量的25.4%～26.0%（P < 0.05）；茶园地表氮、磷径流损失量介于1.48～2.23 kg·hm^-2，0.39～0.54 kg·hm^-2，与CF相比，COF、CFC和CFM处理的氮流失量分别减少了24.8%、11.1%和33.9%，磷流失量分别降低了26.5%、24.8%和29.8%；径流水中不同形态氮、磷浓度与地表径流量呈现极显著负相关（P < 0.01），相关系数介于﹣0.55～﹣0.75。为降低茶园氮磷面源污染流失风险，今后在茶园土壤管理中可优先推广稻草覆盖措施。     

Contact adhesion of thin gold films on elastomeric supports: cold welding under ambient conditions

Thin gold films placed in contact on compliant elastomeric poly(dimethylsiloxane) supports weld together. This ;;cold welding' is remarkable both for the low loads required and for the fact that it occurs under ambient laboratory conditions, conditions in which the gold surfaces are covered with films of weakly adsorbed organic impurities. These impurities are probably displaced laterally during the welding. Welding can be prevented by the presence of a self-assembled gold(I) alkylthiolate monolayer on the gold surfaces. The welded contacts have low electrical resistivity and can be made thin enough to transmit light. This system is a promising one with which to study interaction between interfaces.     

Inclusion systems of organic molecules in restacked single-layer molybdenum disulfide

Novel materials have been obtained by restacking single-layer molybdenum disulfide (MoS(2)) with organic molecules included between the layers. A large variety of organic molecules can be included between layers of MoS(2) and other transition-metal dichalcogenides. The films with the included organics are formed at the interface between an aqueous suspension of the MoS(2) and a water-immiscible organic liquid. The organic molecules are not necessarily electron donors. A highly oriented, conducting film of restacked MoS(2) containing ferrocene is presented as an example.     

Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates

The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-access memories requires films with spontaneous polarization normal to the plane of growth. Epitaxially twinned a axis-oriented La-substituted Bi4Ti3O12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO3 as bottom electrodes. Even though the (118) orientation competes with the (100) orientation, epitaxial films with almost pure (100) orientation were grown using very thin, strained SrRuO3 electrode layers and kinetic growth conditions, including high growth rates and high oxygen background pressures to facilitate oxygen incorporation into the growing film. Films with the a-axis orientation and having their polarization entirely along the direction normal to the film plane can achieve a remanent polarization of 32 microcoulombs per square centimeter.     

Epitaxial cuprate superconductor/ferroelectric heterostructures

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.