Unconventional sequence of fractional quantum Hall states in suspended graphene

Graphene provides a rich platform to study many-body effects, owing to its massless chiral charge carriers and the fourfold degeneracy arising from their spin and valley degrees of freedom. We use a scanning single-electron transistor to measure the local electronic compressibility of suspended graphene, and we observed an unusual pattern of incompressible fractional quantum Hall states that follows the standard composite fermion sequence between filling factors ν = 0 and 1 but involves only even-numerator fractions between ν = 1 and 2. We further investigated this surprising hierarchy by extracting the corresponding energy gaps as a function of the magnetic field. The sequence and relative strengths of the fractional quantum Hall states provide insight into the interplay between electronic correlations and the inherent symmetries of graphene.     

Low-frequency spin dynamics in a canted antiferromagnet

Resistively detected nuclear spin relaxation measurements in closely separated two-dimensional electron systems reveal strong low-frequency electron-spin fluctuations in the quantum Hall regime. As the temperature is decreased, the spin fluctuations, manifested by a sharp enhancement of the nuclear spin-lattice relaxation rate 1/T1, continue to grow down to the lowest temperature of 66 millikelvin. The observed divergent behavior of 1/T1 signals a gapless spin excitation mode and is a hallmark of canted antiferromagnetic order. Our data demonstrate the realization of a two-dimensional system with planar broken symmetry, in which fluctuations do not freeze out when approaching the zero temperature limit.     

Evidence of soft-mode quantum phase transitions in electron double layers

Inelastic light scattering by low-energy spin-excitations reveals three distinct configurations of spin of electron double layers in gallium arsenide quantum wells at even-integer quantum Hall states. The transformations among these spin states appear as quantum phase transitions driven by the interplay between Coulomb interactions and Zeeman splittings. One of the transformations correlates with the emergence of a spin-flip intersubband excitation at vanishingly low energy and provides direct evidence of a link between quantum phase transitions and soft collective excitations in a two-dimensional electron system.     

Single photon-induced symmetry breaking of H2 dissociation

H2, the smallest and most abundant molecule in the universe, has a perfectly symmetric ground state. What does it take to break this symmetry? We found that the inversion symmetry can be broken by absorption of a linearly polarized photon, which itself has inversion symmetry. In particular, the emission of a photoelectron with subsequent dissociation of the remaining H+2 fragment shows no symmetry with respect to the ionic H+ and neutral H atomic fragments. This lack of symmetry results from the entanglement between symmetric and antisymmetric H+2 states that is caused by autoionization. The mechanisms behind this symmetry breaking are general for all molecules.     

Emerging chirality in artificial spin ice

Artificial spin ice, made up of planar nanostructured arrays of simple ferromagnetic bars, is a playground for rich physics associated with the spin alignment of the bars and spin texture associated with the magnetic frustration at the bar vertices. The phase diagram is exotic, showing magnetic monopole-like defects and liquid and solid phases of spins arranged in loop states with predicted chiral order. We show that magnetotransport measurements in connected honeycomb structures yield the onset of an anomalous Hall signal at 50 kelvin. The temperature scale can be attributed to the long-range dipolar ice phase. The topological Hall signal arises because chiral loops form at the sample edges, indicating a generic route to exotic states via nanoarray edge structure.     

The coexistence of superconductivity and topological order in the Bi₂Se₃ thin films

Three-dimensional topological insulators (TIs) are characterized by their nontrivial surface states, in which electrons have their spin locked at a right angle to their momentum under the protection of time-reversal symmetry. The topologically ordered phase in TIs does not break any symmetry. The interplay between topological order and symmetry breaking, such as that observed in superconductivity, can lead to new quantum phenomena and devices. We fabricated a superconducting TI/superconductor heterostructure by growing dibismuth triselenide (Bi(2)Se(3)) thin films on superconductor niobium diselenide substrate. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we observed the superconducting gap at the Bi(2)Se(3) surface in the regime of Bi(2)Se(3) film thickness where topological surface states form. This observation lays the groundwork for experimentally realizing Majorana fermions in condensed matter physics.     

Scattering and interference in epitaxial graphene

A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.     

Interaction-driven spectrum reconstruction in bilayer graphene

The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities (greater than 10(6) square centimers per volt-second). Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra, and the high quality of our samples allowed us to observe strong spectrum reconstructions and electron topological transitions that can be attributed to a nematic phase transition and a decrease in rotational symmetry. These results are especially surprising because no interaction effects have been observed so far in bilayer graphene in the absence of an applied magnetic field.     

Divergent nematic susceptibility in an iron arsenide superconductor

Within the Landau paradigm of continuous phase transitions, ordered states of matter are characterized by a broken symmetry. Although the broken symmetry is usually evident, determining the driving force behind the phase transition can be complicated by coupling between distinct order parameters. We show how measurement of the divergent nematic susceptibility of the iron pnictide superconductor Ba(Fe(1-x)Co(x))(2)As(2) distinguishes an electronic nematic phase transition from a simple ferroelastic distortion. These measurements also indicate an electronic nematic quantum phase transition near the composition with optimal superconducting transition temperature.     

Energy gaps in "metallic" single-walled carbon nanotubes

Metallic single-walled carbon nanotubes have been proposed to be good one-dimensional conductors. However, the finite curvature of the graphene sheet that forms the nanotubes and the broken symmetry due to the local environment may modify their electronic properties. We used low-temperature atomically resolved scanning tunneling microscopy to investigate zigzag and armchair nanotubes, both thought to be metallic. "Metallic" zigzag nanotubes were found to have energy gaps with magnitudes that depend inversely on the square of the tube radius, whereas isolated armchair tubes do not have energy gaps. Additionally, armchair nanotubes packed in bundles have pseudogaps, which exhibit an inverse dependence on tube radius. These observed energy gaps suggest that most "metallic" single-walled nanotubes are not true metals, and they have implications for our understanding of the electronic properties and potential applications of carbon nanotubes.     

Quantum spin Hall effect and topological phase transition in HgTe quantum wells

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.     

Quantized Transport in Graphene p-n Junctions in a Magnetic Field

Recent experimental work on locally gated graphene layers resulting in p-n junctions has revealed the quantum Hall effect in their transport behavior. We explain the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime, the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot-noise plateaus similar to those of conductance, whereas in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle/hole interplay manifest in mode mixing and noise in the bipolar regime.     

Dynamical superconducting order parameter domains in Sr2RuO4

We present direct evidence for complex p-wave order parameter symmetry and the presence of dynamical chiral order parameter domains of the form px +/- ipy in the ruthenate superconductor Sr2RuO4. The domain structure creates differences in the magnetic field modulation of the critical current of Josephson junctions fabricated on orthogonal faces of Sr2RuO4 single crystals. Transitions between the chiral states of a domain or the motion of domain walls separating them generates telegraph noise in the critical current as a function of magnetic field or time and is responsible for hysteresis observed in field sweeps of the critical current. The presence of such domains confirms the p-wave triplet spin and complex (broken time-reversal symmetry) nature of the superconducting pairing state in Sr2RuO4.     

Spin Hall effect transistor

The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer.     

Quantum spin hall insulator state in HgTe quantum wells

Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2e(2)/h, where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field-induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.     

Spin-torque switching with the giant spin Hall effect of tantalum

Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.     

Observation of the spin hall effect of light via weak measurements

We have detected a spin-dependent displacement perpendicular to the refractive index gradient for photons passing through an air-glass interface. The effect is the photonic version of the spin Hall effect in electronic systems, indicating the universality of the effect for particles of different nature. Treating the effect as a weak measurement of the spin projection of the photons, we used a preselection and postselection technique on the spin state to enhance the original displacement by nearly four orders of magnitude, attaining sensitivity to displacements of approximately 1 angstrom. The spin Hall effect can be used for manipulating photonic angular momentum states, and the measurement technique holds promise for precision metrology.     

Dissipationless quantum spin current at room temperature

Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.     

Imaging spin transport in lateral ferromagnet/semiconductor structures

We directly imaged electrical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devices, which have ferromagnetic source and drain tunnel-barrier contacts. The emission of spins from the source was observed, and a region of spin accumulation was imaged near the ferromagnetic drain contact. Both injected and accumulated spins have the same orientation (antiparallel to the contact magnetization), and we show that the accumulated spin polarization flows away from the drain (against the net electron current), indicating that electron spins are polarized by reflection from the ferromagnetic drain contact. The electrical conductance can be modulated by controlling the spin orientation of optically injected electrons flowing through the drain.     

Unraveling the spin polarization of the ν = 5/2 fractional quantum Hall state

The fractional quantum Hall (FQH) effect at filling factor ν = 5/2 has recently come under close scrutiny, as its ground state may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. However, its microscopic origin remains unknown, and candidate model wave functions include those with undesirable abelian statistics. We report direct measurements of the electron spin polarization of the ν = 5/2 FQH state using resistively detected nuclear magnetic resonance. We find the system to be fully polarized, which unambiguously rules out the most likely abelian contender and lends strong support for the ν = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first excited Landau level underlying the physics at ν = 5/2.