Quantized Transport in Graphene p-n Junctions in a Magnetic Field

Recent experimental work on locally gated graphene layers resulting in p-n junctions has revealed the quantum Hall effect in their transport behavior. We explain the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime, the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot-noise plateaus similar to those of conductance, whereas in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle/hole interplay manifest in mode mixing and noise in the bipolar regime.     

Hot carrier-assisted intrinsic photoresponse in graphene

We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.     

Quantum spin hall insulator state in HgTe quantum wells

Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2e(2)/h, where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field-induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.     

Broken-symmetry states in doubly gated suspended bilayer graphene

The single-particle energy spectra of graphene and its bilayer counterpart exhibit multiple degeneracies that arise through inherent symmetries. Interactions among charge carriers should spontaneously break these symmetries and lead to ordered states that exhibit energy gaps. In the quantum Hall regime, these states are predicted to be ferromagnetic in nature, whereby the system becomes spin polarized, layer polarized, or both. The parabolic dispersion of bilayer graphene makes it susceptible to interaction-induced symmetry breaking even at zero magnetic field. We investigated the underlying order of the various broken-symmetry states in bilayer graphene suspended between top and bottom gate electrodes. We deduced the order parameter of the various quantum Hall ferromagnetic states by controllably breaking the spin and sublattice symmetries. At small carrier density, we identified three distinct broken-symmetry states, one of which is consistent with either spontaneously broken time-reversal symmetry or spontaneously broken rotational symmetry.     

Field-effect tunneling transistor based on vertical graphene heterostructures

An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.     

Detection of quantum noise from an electrically driven two-level system

The electrical noise of mesoscopic devices can be strongly influenced by the quantum motion of electrons. To probe this effect, we have measured the current fluctuations at high frequency (5 to 90 gigahertz) using a superconductor-insulator-superconductor tunnel junction as an on-chip spectrum analyzer. By coupling this frequency-resolved noise detector to a quantum device, we can measure the high-frequency, nonsymmetrized noise as demonstrated for a Josephson junction. The same scheme is used to detect the current fluctuations arising from coherent charge oscillations in a two-level system, a superconducting charge qubit. A narrow band peak is observed in the spectral noise density at the frequency of the coherent charge oscillations.     

Scattering and interference in epitaxial graphene

A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.     

Manipulating the quantum state of an electrical circuit

We have designed and operated a superconducting tunnel junction circuit that behaves as a two-level atom: the "quantronium." An arbitrary evolution of its quantum state can be programmed with a series of microwave pulses, and a projective measurement of the state can be performed by a pulsed readout subcircuit. The measured quality factor of quantum coherence Qphi approximately 25,000 is sufficiently high that a solid-state quantum processor based on this type of circuit can be envisioned.     

Chaotic Dirac billiard in graphene quantum dots

The exceptional electronic properties of graphene, with its charge carriers mimicking relativistic quantum particles and its formidable potential in various applications, have ensured a rapid growth of interest in this new material. We report on electron transport in quantum dot devices carved entirely from graphene. At large sizes (>100 nanometers), they behave as conventional single-electron transistors, exhibiting periodic Coulomb blockade peaks. For quantum dots smaller than 100 nanometers, the peaks become strongly nonperiodic, indicating a major contribution of quantum confinement. Random peak spacing and its statistics are well described by the theory of chaotic neutrino billiards. Short constrictions of only a few nanometers in width remain conductive and reveal a confinement gap of up to 0.5 electron volt, demonstrating the possibility of molecular-scale electronics based on graphene.     

The focusing of electron flow and a Veselago lens in graphene p-n junctions

The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.     

提莫菲维小麦和偏凸山羊草不育细胞质对小麦旗叶光合功能的影响

 本文研究了提莫菲维小麦（Triticum timopheevi）和偏凸山羊草（Aegilops ventricosa）雄性不育细胞质对小麦旗叶光合功能的影响。研究结果表明，与普通小麦细胞质相比，提莫菲维小麦和偏凸山羊草细胞质会在不同程度上对小麦旗叶的光合速率、量子效率、气孔导度、叶肉导度、水分利用效率、光系统Ⅰ活性及Hill反应活性产生负效应，提莫菲维小麦细胞质的负效应小于偏凸山羊草。旗叶全展初期，普通小麦细胞质的RuBPCase初始活性和总活性显著高于提莫菲维小麦细胞质，提莫菲维小麦细胞质又显著高于偏凸山羊草细胞质；而在RuBPCase初始比活性及总比活性方面，普通小麦细胞质和提莫菲维小麦细胞质相近，这两者显著高于偏凸山羊草细胞质。异源细胞质雄性不育系育性恢复后，旗叶光合速率、RuBPCase初始活性和初始比活性等均有显著提高。     

Visualizing individual nitrogen dopants in monolayer graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.     

Quantum mechanics of a macroscopic variable: the phase difference of a josephson junction

Experiments to investigate the quantum behavior of a macroscopic degree of freedom, namely the phase difference across a Josephson tunnel junction, are described. The experiments involve measurements of the escape rate of the junction from its zero voltage state. Low temperature measurements of the escape rate for junctions that are either nearly undamped or moderately damped agree very closely with predictions for macroscopic quantum tunneling, with no adjustable parameters. Microwave spectroscopy reveals quantized energy levels in the potential well of the junction in excellent agreement with quantum-mechanical calculations. The system can be regarded as a "macroscopic nucleus with wires."     

Phase-coherent transport in graphene quantum billiards

As an emergent electronic material and model system for condensed-matter physics, graphene and its electrical transport properties have become a subject of intense focus. By performing low-temperature transport spectroscopy on single-layer and bilayer graphene, we observe ballistic propagation and quantum interference of multiply reflected waves of charges from normal electrodes and multiple Andreev reflections from superconducting electrodes, thereby realizing quantum billiards in which scattering only occurs at the boundaries. In contrast to the conductivity of conventional two-dimensional materials, graphene's conductivity at the Dirac point is geometry-dependent because of conduction via evanescent modes, approaching the theoretical value 4e(2)/pih (where e is the electron charge and h is Planck's constant) only for short and wide devices. These distinctive transport properties have important implications for understanding chaotic quantum systems and implementing nanoelectronic devices, such as ballistic transistors.     

Gap junctional conductance and permeability are linearly related

The permeability of gap junctions to tetraethylammonium ions was measured in isolated pairs of blastomeres from Rana pipiens L. and compared to the junctional conductance. In this system, the junctional conductance is voltage-dependent and decreases with moderate transjunctional voltage of either sign. The permeability to tetraethylammonium ions was determined by injecting one cell of a pair with tetraethylammonium and monitoring its changing concentration in the prejunctional and postjunctional cells with ion-selective electrodes. Junctional conductance was determined by current-clamp and voltage-clamp techniques. For different cell pairs in which the transjunctional voltage was small and the junctional conductance at its maximum value, the permeability to tetraethylammonium ions was proportional to the junctional conductance. In individual cell pairs, a reduction in the junctional conductance induced by voltage was accompanied by a proportional reduction in the permeability of the gap junction over a wide range. The diameter of the tetraethylammonium ion (8.0 to 8.5 A, unhydrated) is larger than that of the potassium ion (4.6 A, hydrated), the predominant current-carrying species. The proportionality between the permeability to tetraethylammonium ions and the junctional conductance, measured here with exceptionally fine time resolution, indicates that a common gap junctional pathway mediates both electrical and chemical fluxes between cells, and that closure of single gap junction channels by voltage is all or none.     

Electromechanical properties of graphene drumheads

We determined the electromechanical properties of a suspended graphene layer by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements, as well as computational simulations of the graphene-membrane mechanics and morphology. A graphene membrane was continuously deformed by controlling the competing interactions with a STM probe tip and the electric field from a back-gate electrode. The probe tip-induced deformation created a localized strain field in the graphene lattice. STS measurements on the deformed suspended graphene display an electronic spectrum completely different from that of graphene supported by a substrate. The spectrum indicates the formation of a spatially confined quantum dot, in agreement with recent predictions of confinement by strain-induced pseudomagnetic fields.     

Topological phase transition and texture inversion in a tunable topological insulator

The recently discovered three-dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit interaction or the crystal lattice, driving the system through a topological quantum phase transition. By directly measuring the topological quantum numbers and invariants, we report the observation of a phase transition in a tunable spin-orbit system, BiTl(S(1-δ)Se(δ))(2), in which the topological state formation is visualized. In the topological state, vortex-like polarization states are observed to exhibit three-dimensional vectorial textures, which collectively feature a chirality transition as the spin momentum-locked electrons on the surface go through the zero carrier density point. Such phase transition and texture inversion can be the physical basis for observing fractional charge (±e/2) and other fractional topological phenomena.     

Quantum dynamics of a d-wave Josephson junction

Here we present the direct observation of macroscopic quantum properties in an all high-critical-temperature superconductor d-wave Josephson junction. Although dissipation caused by low-energy excitations is expected to strongly suppress macroscopic quantum effects, we demonstrate energy level quantization in our d-wave Josephson junction. The result indicates that the role of dissipation mechanisms in high-temperature superconductors has to be revised, and it may also have consequences for the class of solid-state "quiet" quantum bits with superior coherence time.     

Three-dimensional structure of a recombinant gap junction membrane channel

Gap junction membrane channels mediate electrical and metabolic coupling between adjacent cells. The structure of a recombinant cardiac gap junction channel was determined by electron crystallography at resolutions of 7.5 angstroms in the membrane plane and 21 angstroms in the vertical direction. The dodecameric channel was formed by the end-to-end docking of two hexamers, each of which displayed 24 rods of density in the membrane interior, which is consistent with an alpha-helical conformation for the four transmembrane domains of each connexin subunit. The transmembrane alpha-helical rods contrasted with the double-layered appearance of the extracellular domains. Although not indicative for a particular type of secondary structure, the protein density that formed the extracellular vestibule provided a tight seal to exclude the exchange of substances with the extracellular milieu.     

Carbon nanotube quantum resistors

The conductance of multiwalled carbon nanotubes (MWNTs) was found to be quantized. The experimental method involved measuring the conductance of nanotubes by replacing the tip of a scanning probe microscope with a nanotube fiber, which could be lowered into a liquid metal to establish a gentle electrical contact with a nanotube at the tip of the fiber. The conductance of arc-produced MWNTs is one unit of the conductance quantum G0 = 2e2/h = (12.9 kilohms)-1. The nanotubes conduct current ballistically and do not dissipate heat. The nanotubes, which are typically 15 nanometers wide and 4 micrometers long, are several orders of magnitude greater in size and stability than other typical room-temperature quantum conductors. Extremely high stable current densities, J > 10(7) amperes per square centimeter, have been attained.