Electromechanical resonators from graphene sheets

Nanoelectromechanical systems were fabricated from single- and multilayer graphene sheets by mechanically exfoliating thin sheets from graphite over trenches in silicon oxide. Vibrations with fundamental resonant frequencies in the megahertz range are actuated either optically or electrically and detected optically by interferometry. We demonstrate room-temperature charge sensitivities down to 8 x 10(-4) electrons per root hertz. The thinnest resonator consists of a single suspended layer of atoms and represents the ultimate limit of two-dimensional nanoelectromechanical systems.     

红肖梨丰产优质栽培试验及示范

为推广科学合理的栽培管理技术,北京市怀柔区怀北镇于2004年分别在大水峪、河防口村建立红肖梨丰产优质栽培试验及示范园,总结出一套丰产优质的栽培管理方案,进一步提高红肖梨的品质和产量。     

Transformation optics using graphene

Metamaterials and transformation optics play substantial roles in various branches of optical science and engineering by providing schemes to tailor electromagnetic fields into desired spatial patterns. We report a theoretical study showing that by designing and manipulating spatially inhomogeneous, nonuniform conductivity patterns across a flake of graphene, one can have this material as a one-atom-thick platform for infrared metamaterials and transformation optical devices. Varying the graphene chemical potential by using static electric field yields a way to tune the graphene conductivity in the terahertz and infrared frequencies. Such degree of freedom provides the prospect of having different "patches" with different conductivities on a single flake of graphene. Numerous photonic functions and metamaterial concepts can be expected to follow from such a platform.     

Wafer-scale graphene integrated circuit

A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.     

Dislocation-driven deformations in graphene

The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materials. Studies of dislocations have focused on three-dimensional materials, and there is little experimental evidence regarding the dynamics of dislocations and their impact at the atomic level on the lattice structure of graphene. We studied the dynamics of dislocation pairs in graphene, recorded with single-atom sensitivity. We examined stepwise dislocation movement along the zig-zag lattice direction mediated either by a single bond rotation or through the loss of two carbon atoms. The strain fields were determined, showing how dislocations deform graphene by elongation and compression of C-C bonds, shear, and lattice rotations.     

Gate-variable optical transitions in graphene

Two-dimensional graphene monolayers and bilayers exhibit fascinating electrical transport behaviors. Using infrared spectroscopy, we find that they also have strong interband transitions and that their optical transitions can be substantially modified through electrical gating, much like electrical transport in field-effect transistors. This gate dependence of interband transitions adds a valuable dimension for optically probing graphene band structure. For a graphene monolayer, it yields directly the linear band dispersion of Dirac fermions, whereas in a bilayer, it reveals a dominating van Hove singularity arising from interlayer coupling. The strong and layer-dependent optical transitions of graphene and the tunability by simple electrical gating hold promise for new applications in infrared optics and optoelectronics.     

Layer-by-layer removal of graphene for device patterning

The patterning of graphene is useful in fabricating electronic devices, but existing methods do not allow control of the number of layers of graphene that are removed. We show that sputter-coating graphene and graphene-like materials with zinc and dissolving the latter with dilute acid removes one graphene layer and leaves the lower layers intact. The method works with the four different types of graphene and graphene-like materials: graphene oxide, chemically converted graphene, chemical vapor-deposited graphene, and micromechanically cleaved ("clear-tape") graphene. On the basis of our data, the top graphene layer is damaged by the sputtering process, and the acid treatment removes the damaged layer of carbon. When used with predesigned zinc patterns, this method can be viewed as lithography that etches the sample with single-atomic-layer resolution.     

Controlling the electronic structure of bilayer graphene

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.     

基于嵌入式系统的机电控制系统开发研究

近年来,社会的不断进步与发展,使嵌入式系统在机电控制领域中的应用变得越来越广泛,嵌入式系统的应用在很大程度上促进了机电控制领域的发展,提高了机电控制设备的工作性能。鉴于此,本文便基于嵌入式系统对机电控制系统的开发进行深入的研究,以期能够为机电控制领域的进一步发展做出贡献。     

智能制造中机电一体化技术的应用研究

随着如今科技的快速发展,在社会经济的发展过程中有更多的制造产业也都开始应用全新的科技手段来帮助企业进行更好的生产制造。在企业制造过程中出现的这些全新的技术手段中,智能制造已经算作最前沿的科技手段,智能制造的应用有效的提高了我国企业的机械制造水平和产品制造能力,帮助我国企业得到更好的发展。而在智能制造中,机电一体化的技术也得到了更多的研究和关注,对我国智能制造的研究有着非常重要的意义。     

Carbon-based supercapacitors produced by activation of graphene

Supercapacitors, also called ultracapacitors or electrochemical capacitors, store electrical charge on high-surface-area conducting materials. Their widespread use is limited by their low energy storage density and relatively high effective series resistance. Using chemical activation of exfoliated graphite oxide, we synthesized a porous carbon with a Brunauer-Emmett-Teller surface area of up to 3100 square meters per gram, a high electrical conductivity, and a low oxygen and hydrogen content. This sp(2)-bonded carbon has a continuous three-dimensional network of highly curved, atom-thick walls that form primarily 0.6- to 5-nanometer-width pores. Two-electrode supercapacitor cells constructed with this carbon yielded high values of gravimetric capacitance and energy density with organic and ionic liquid electrolytes. The processes used to make this carbon are readily scalable to industrial levels.     

Room-temperature quantum Hall effect in graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occurs on a truly macroscopic scale, has attracted intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE has been observed only at liquid-helium temperatures. We show that in graphene, in a single atomic layer of carbon, the QHE can be measured reliably even at room temperature, which makes possible QHE resistance standards becoming available to a broader community, outside a few national institutions.     

Hot carrier-assisted intrinsic photoresponse in graphene

We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.     

Scattering and interference in epitaxial graphene

A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.     

基于非线性分析的复杂机电系统故障特征提取

针对复杂机电系统振动信号呈现复杂非平稳性的特点,采用Hilbert-Huang变换(HHT)和基于小波包分解的频带能量比例非线性分析方法,对机电转子系统碰摩和不对中故障试验信号进行分析.分析结果表明:基于非线性分析的HHT和小波包频带能量比例方法弥补了原有传统频谱分析的不足,可以清晰的表征故障的瞬时和局部特性,实现故障特征的有效提取.     

Phase-coherent transport in graphene quantum billiards

As an emergent electronic material and model system for condensed-matter physics, graphene and its electrical transport properties have become a subject of intense focus. By performing low-temperature transport spectroscopy on single-layer and bilayer graphene, we observe ballistic propagation and quantum interference of multiply reflected waves of charges from normal electrodes and multiple Andreev reflections from superconducting electrodes, thereby realizing quantum billiards in which scattering only occurs at the boundaries. In contrast to the conductivity of conventional two-dimensional materials, graphene's conductivity at the Dirac point is geometry-dependent because of conduction via evanescent modes, approaching the theoretical value 4e(2)/pih (where e is the electron charge and h is Planck's constant) only for short and wide devices. These distinctive transport properties have important implications for understanding chaotic quantum systems and implementing nanoelectronic devices, such as ballistic transistors.     

Chaotic Dirac billiard in graphene quantum dots

The exceptional electronic properties of graphene, with its charge carriers mimicking relativistic quantum particles and its formidable potential in various applications, have ensured a rapid growth of interest in this new material. We report on electron transport in quantum dot devices carved entirely from graphene. At large sizes (>100 nanometers), they behave as conventional single-electron transistors, exhibiting periodic Coulomb blockade peaks. For quantum dots smaller than 100 nanometers, the peaks become strongly nonperiodic, indicating a major contribution of quantum confinement. Random peak spacing and its statistics are well described by the theory of chaotic neutrino billiards. Short constrictions of only a few nanometers in width remain conductive and reveal a confinement gap of up to 0.5 electron volt, demonstrating the possibility of molecular-scale electronics based on graphene.     

Visualizing individual nitrogen dopants in monolayer graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.     

Chemically derived, ultrasmooth graphene nanoribbon semiconductors

We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges with possibly well-defined zigzag or armchair-edge structures. Electrical transport experiments showed that, unlike single-walled carbon nanotubes, all of the sub-10-nanometer GNRs produced were semiconductors and afforded graphene field effect transistors with on-off ratios of about 10(7) at room temperature.