In situ observation of the electrochemical lithiation of a single SnO₂ nanowire electrode

We report the creation of a nanoscale electrochemical device inside a transmission electron microscope--consisting of a single tin dioxide (SnO(2)) nanowire anode, an ionic liquid electrolyte, and a bulk lithium cobalt dioxide (LiCoO(2)) cathode--and the in situ observation of the lithiation of the SnO(2) nanowire during electrochemical charging. Upon charging, a reaction front propagated progressively along the nanowire, causing the nanowire to swell, elongate, and spiral. The reaction front is a "Medusa zone" containing a high density of mobile dislocations, which are continuously nucleated and absorbed at the moving front. This dislocation cloud indicates large in-plane misfit stresses and is a structural precursor to electrochemically driven solid-state amorphization. Because lithiation-induced volume expansion, plasticity, and pulverization of electrode materials are the major mechanical effects that plague the performance and lifetime of high-capacity anodes in lithium-ion batteries, our observations provide important mechanistic insight for the design of advanced batteries.     

Magnetic domain-wall racetrack memory

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.     

Nanoribbon waveguides for subwavelength photonics integration

Although the electrical integration of chemically synthesized nanowires has been achieved with lithography, optical integration, which promises high speeds and greater device versatility, remains unexplored. We describe the properties and functions of individual crystalline oxide nanoribbons that act as subwavelength optical waveguides and assess their applicability as nanoscale photonic elements. The length, flexibility, and strength of these structures enable their manipulation on surfaces, including the optical linking of nanoribbon waveguides and other nanowire elements to form networks and device components. We demonstrate the assembly of ribbon waveguides with nanowire light sources and detectors as a first step toward building nanowire photonic circuitry.     

Dislocation-driven nanowire growth and Eshelby twist

Hierarchical nanostructures of lead sulfide nanowires resembling pine trees were synthesized by chemical vapor deposition. Structural characterization revealed a screwlike dislocation in the nanowire trunks with helically rotating epitaxial branch nanowires. It is suggested that the screw component of an axial dislocation provides the self-perpetuating steps to enable one-dimensional crystal growth, in contrast to mechanisms that require metal catalysts. The rotating trunks and branches are the consequence of the Eshelby twist of screw dislocations with a dislocation Burgers vector along the 110 directions having an estimated magnitude of 6 +/- 2 angstroms for the screw component. The results confirm the Eshelby theory of dislocations, and the proposed nanowire growth mechanism could be general to many materials.     

Breaking the speed limits of phase-change memory

Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.     

不同成分和结构的CoCu纳米线阵列的沉积规律

利用直流电化学沉积法通过调节沉积参数在多孔阳极氧化铝模板中沉积制备出了一系列不同成分和结构的磁性CoCu纳米线阵列.XRD和TEM的结果显示,沉积溶液的pH值对纳米线的成分比例和相结构的影响表现出了明显的规律性.笔者认为pH值对纳米线成分比例和相结构的控制主要源于它对溶液中Co^2＋沉积速率的影响.基于此沉积规律,沉积出了立方结构与六角结构共存的复相结构的CoCu纳米线.由于复相结构的CoCu纳米线中包含较多的相边界,因此它们具有远好于单相结构CoCu纳米线的磁性,其矫顽力和剩磁比均是单相结构纳米线的3倍.     

Dislocations in complex materials

Deformation of metals and alloys by dislocations gliding between well-separated slip planes is a well-understood process, but most crystal structures do not possess such simple geometric arrangements. Examples are the Laves phases, the most common class of intermetallic compounds and exist with ordered cubic, hexagonal, and rhombohedral structures. These compounds are usually brittle at low temperatures, and transformation from one structure to another is slow. On the basis of geometric and energetic considerations, a dislocation-based mechanism consisting of two shears in different directions on adjacent atomic planes has been used to explain both deformation and phase transformations in this class of materials. We report direct observations made by Z-contrast atomic resolution microscopy of stacking faults and dislocation cores in the Laves phase Cr2Hf. These results show that this complex dislocation scheme does indeed operate in this material. Knowledge gained of the dislocation core structure will enable improved understanding of deformation mechanisms and phase transformation kinetics in this and other complex structures.     

Structural Memory in Pressure-Amorphized AlPO4

Molecular dynamics simulations reveal the mechanism of the structural memory effect in alpha-berlinite (AlPO(4)), where a single crystal transforms to an amorphous solid by compression and then reverts to the original crystalline structure upon release of pressure. The enhanced oxygen coordination around the aluminum atoms in AlPO(4) at high pressure leads to a mechanical instability that causes the phase transformation. The difference in the structural memory behavior between AlPO(4) and isostructural alpha-quartz, for which the pressure-induced amorphized phase is recoverable, can be attributed to the presence of the PO(4) units, which remain essentially four-coordinated even when severely distorted.     

Piezoelectric nanogenerators based on zinc oxide nanowire arrays

We have converted nanoscale mechanical energy into electrical energy by means of piezoelectric zinc oxide nanowire (NW) arrays. The aligned NWs are deflected with a conductive atomic force microscope tip in contact mode. The coupling of piezoelectric and semiconducting properties in zinc oxide creates a strain field and charge separation across the NW as a result of its bending. The rectifying characteristic of the Schottky barrier formed between the metal tip and the NW leads to electrical current generation. The efficiency of the NW-based piezoelectric power generator is estimated to be 17 to 30%. This approach has the potential of converting mechanical, vibrational, and/or hydraulic energy into electricity for powering nanodevices.     

基于全基因组和转录组的绿豆谷胱甘肽转移酶基因及其对镉胁迫的响应

以绿豆为材料,运用生物信息学、转录组学和酶学等分析方法,对绿豆GST家族基因结构及其表达蛋白的特征进行分析,并检测镉（Cd）胁迫下GST基因表达谱和酶活性变化。结果表明,绿豆基因组中包含有93个GST基因,分为Tau、Phi、Lambda、Theta、Zeta、DHAR、EF1Bg、GHRs、mPGES2和TCHQD等10类,以Phi和Tau类基因数最多;不同类基因结构存在较大差异,Tau类和TCHQD类含有2个外显子,Phi类和GHRs类分别含3和5个外显子,其余基因外显子数目在6~10个。其中只有40个基因在绿豆中表达,31个基因在根、茎、叶中都有表达,6个基因选择性表达。Cd胁迫上调大多数基因的表达量,根、茎、叶中被显著上调的GST基因分别为10、8和4个,平均上调倍数为2.17、2.25和3.26;Cd胁迫显著升高根和茎中GST酶活分别达2.14和1.27倍,与基因表达量的变化一致。表明绿豆根中GST基因及其酶活在Cd胁迫响应中起最主要作用。研究结果为植物GST基因的进一步研究和在植物抗逆中生物技术应用提供了科学资料。     

Grain boundary-mediated plasticity in nanocrystalline nickel

The plastic behavior of crystalline materials is mainly controlled by the nucleation and motion of lattice dislocations. We report in situ dynamic transmission electron microscope observations of nanocrystalline nickel films with an average grain size of about 10 nanometers, which show that grain boundary-mediated processes have become a prominent deformation mode. Additionally, trapped lattice dislocations are observed in individual grains following deformation. This change in the deformation mode arises from the grain size-dependent competition between the deformation controlled by nucleation and motion of dislocations and the deformation controlled by diffusion-assisted grain boundary processes.     

Studies on Electrical Activation of Porcine Oocytes Matured in vitro and Embryo Culture Systems

Conditions for electrical parthenogenetic activation of porcine oocytes matured in vitro and in vitro culture systems of porcine embryo were studied. The best results were achieved under the conditions of electrical field strength and the pulse duration at 130Vmm-1/80 μs, with a blastocyst development rate of (20.12 ± 8.18)% (P ＞ 0.05). No significant difference was found between treatments of multiple pulses and a single pulse ( P ＞ 0.05). Parthenogenetic embryos were cultured with different methods and air conditions for 7 days in vitro, blastocyst development rate of embryos with changed culture media [ (26.44 ± 8.35)% ] or changed media with 10% fetal bovine serum (FBS) [ (17.68 ± 5.39)% ] on the fifth day showing no significant difference from that of embryos without change of culture media [ (25.30 ± 7.55) %, P ＞ 0.05 ], while cell numbers of blastocysts from embryos with changed culture media (15.78 ± 5.46 and 14.55 ± 4.81) were significantly lower than number of blastocysts from embryos without change of culture media (18.01 ± 6.79,P ＜ 0.01 ). Blastocyst development rate and blastocyst cell number of embryos cultured in lower O2 (5 % CO2:7%O2:88%N2) also showed no significant difference from those in high O2 (5% CO2 in air) [ (20.78 ± 8.80) % and 17.00 ± 6.12 vs. (25.30 ± 7.55) % and 18.01 ± 6.79, P ＞ 0.05 ]. It is concluded that change of culture media with the same new one or changing over to media with 10% fetal bovine serum (FBS) on the fifth day and low O2 environment are not necessary for porcine embryos development.     

聚乙二醇胁迫对假俭草谷胱甘肽转硫酶活性的影响

为探明谷胱甘肽转硫酶(GST)在水分胁迫中的作用，分别用聚乙二醇6000模拟干旱处理假俭草不同时间后，测定假俭草植株的质膜电解质渗透率，GST活性，H2O2和还原型谷胱甘肽(GSH)含量．结果表明：PEG胁迫使幼苗H2O2积累，质膜电解质渗透率增加，GSH含量升高；胁迫处理后幼苗中GST活性明显高于对照，在4d内，随着水分胁迫处理时间的延长，GST活性逐渐升高．GST活性与H2O2的含量相关，表明GST不但能清除H2O2引起的有害物质，同时还很可能受H2O2的调节．     

A superconducting field-effect switch

We report here on a novel realization of a field-effect device that allows switching between insulating and superconducting states, which is the widest possible variation of electrical properties of a material. We chose C(60) as the active material because of its low surface state density and observed superconductivity in alkali metal-doped C(60). We induced three electrons per C(60) molecule in the topmost molecular layer of a crystal with the field-effect device, creating a superconducting switch operating up to 11 kelvin. An insulator was thereby transformed into a superconductor. This technique offers new opportunities for the study of superconductivity as a function of carrier concentration.     

NiTi形状记忆合金的拉伸实验与物理模型

根据NiTi丝的拉伸实验结果,基于滞后元方法,建立了拉伸状态下应力-应变曲线的唯象物理模型,并进行了数值模拟。研究结果表明(1)SMA丝在马氏体相变,特别是R相变时出现一系列物理、力学性质的异常变化,其应力-应变关系呈现高度非线性;(2)在NiTi丝断裂之前没有明显的屈服现象;(3)物理模型的数值模拟结果与实验结果吻合较好。     

烟草的TMV侵染耐受性与谷胱甘肽代谢途径的关系

为了深入了解烟草对烟草花叶病毒(TMV)的抗性机制,以耐受TMV感染品种豫烟8号和具有相同遗传背景对花叶病敏感的品种NC89为材料,通过对高通量测序获得的转录组数据进行生物信息学分析发现,二者接种TMV后的差异表达基因富集通路中共同存在谷胱甘肽代谢途径,且耐受性品种豫烟8号中该途径有增强的趋势。采用荧光定量PCR和分光光度法检测了两品种接种TMV前后谷胱甘肽代谢途径中关键酶谷胱甘肽S转移酶(GST)基因表达水平、酶活性以及谷胱甘肽(GSH)含量的变化。结果表明,接种TMV后两品种中GST基因表达水平升高,GST酶活性增强,GSH含量升高,耐受性品种豫烟8号增幅更明显。通过硫元素的丰缺试验研究了接种TMV对GST基因及与TMV侵染耐受性相关基因表达水平的影响,结果显示,+S和-S处理中两品种接种病毒后这些基因的表达趋势一致,-S处理的表达量低于+S处理。GST、PR1-a、HSP90和Catalase-3这些抗病相关基因都呈上调表达,其中豫烟8号接种后的表达量均高于NC89;而Psb A和PhotosystemⅡ10 k Da polypeptide 2个涉及光合作用的基因均呈现下调表达,但是接种后豫烟8号的下调幅度小于NC89。以上表明,在耐受TMV感染的品种中,谷胱甘肽代谢增强对细胞环境的氧化还原平衡有一定的促进作用,使光系统Ⅱ中的关键成分D1蛋白基因Psb A的表达相对稳定,从而减轻光合系统的破坏程度。     

Isolated single-cycle attosecond pulses

We generated single-cycle isolated attosecond pulses around approximately 36 electron volts using phase-stabilized 5-femtosecond driving pulses with a modulated polarization state. Using a complete temporal characterization technique, we demonstrated the compression of the generated pulses for as low as 130 attoseconds, corresponding to less than 1.2 optical cycles. Numerical simulations of the generation process show that the carrier-envelope phase of the attosecond pulses is stable. The availability of single-cycle isolated attosecond pulses opens the way to a new regime in ultrafast physics, in which the strong-field electron dynamics in atoms and molecules is driven by the electric field of the attosecond pulses rather than by their intensity profile.     

Tailoring electrical transport across grain boundaries in polycrystalline graphene

Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and scattering of charge carriers at grain boundaries (GBs) could degrade its performance relative to exfoliated, single-crystal graphene. However, the electrical properties of GBs have so far been addressed indirectly without simultaneous knowledge of their locations and structures. We present electrical measurements on individual GBs in CVD graphene first imaged by transmission electron microscopy. Unexpectedly, the electrical conductance improves by one order of magnitude for GBs with better interdomain connectivity. Our study suggests that polycrystalline graphene with good stitching may allow for uniformly high electrical performance rivaling that of exfoliated samples, which we demonstrate using optimized growth conditions and device geometry.     

Giant electrocaloric effect in thin-film PbZr(0.95)Ti(0.05)O3

An applied electric field can reversibly change the temperature of an electrocaloric material under adiabatic conditions, and the effect is strongest near phase transitions. We demonstrate a giant electrocaloric effect (0.48 kelvin per volt) in 350-nanometer PbZr(0.95)Ti(0.05)O3 films near the ferroelectric Curie temperature of 222 degrees C. A large electrocaloric effect may find application in electrical refrigeration.     

干燥过程中树盘含水率的在线检测

为实现干燥过程中树盘含水率的在线精准检测,分析了环境温度对电阻应变式称质量装置测量精度的影响规律,获得了利用环境温度和电测质量计算精准质量的二元回归方程,并用其将树盘的电测质量校正为精准质量。用树盘绝干质量、干燥过程中在线测算的精准质量计算含水率实际值,对HYD-B型含水率仪进行了实验校正。探讨了纤维饱和点之下探针深度、间距、位置及材温补偿和介质温度补偿对含水率仪测量精度的影响规律,确定适宜的探针深度和间距,得到了适宜探针深度、间距下含水率测值的修正公式。结果显示:称质量装置测量精度的二元回归校正方程的相关系数达0.99;纤维饱和点以下,探针插入木材深度距离上表面为木材厚度的1/2~2/3、间距30 mm时,含水率仪检测精度高;材温补偿和介质温度补偿对检测精度影响不大,可用方便的介质温度补偿代替材温补偿。