基于分子印迹膜的电流型传感器检测伏草隆残留

以邻苯二胺为功能单体,伏草隆为模板分子,在金电极表面通过电聚合的方法制备对伏草隆具有特异识别能力的分子印迹膜,利用门效应原理对伏草隆进行测定。采用电化学手段对分子印迹膜进行表征,对试验条件进行优化并且考察传感器的抗干扰能力。结果发现:传感器对伏草隆具有很好的特异识别能力,在试验的最优条件下,伏草隆浓度在5×10-9~2×10-7 mol/L范围内与电流的响应信号呈良好的线性关系;方法的检出限达到1.7×10-9 mol/L。该传感器应用于实际样品的检测,加标回收率为103.0%~105.6%,结果令人满意。

An Amperometric Sensor Based on Molecularly Imprinted Membrane for Detecting Fluometuron Residual

A sensitive molecularly imprinted electrochemical sensor based on gate-controlled effect was prepared with o-phenylenediamine as functional monomer for the detection of fluometuron. The performance of molecularly imprinted polymer and the electrochemical behavior in molecular imprinted sensor were investigated, the assay conditions and interference factors were tested. The sensor exhibited good selectivity to fluometuron, the decrease of current intensities was linear to the concentrations of fluometuron under the optimal conditions. The detection range was 5×10-9 to 2×10-7 mol/L, with a detection limit of 1.7×10-9 mol/L. When the sensor was used in the determination of real samples, the recoveries could reach 103.0%-105.6%.