| 流体静压原位调节单量子点中单双激子能量及精细结构劈裂 |
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| 引用本文： | 孙丙西,;武雪飞,;窦秀明,;丁琨,;孙宝权.流体静压原位调节单量子点中单双激子能量及精细结构劈裂[J].河北农业技术师范学院学报,2014(4):1-5. |
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| 作者姓名： | 孙丙西 ;武雪飞 ;窦秀明 ;丁琨 ;孙宝权 |
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| 作者单位： | [1]内蒙古民族大学物理与电子信息学院,内蒙古通辽028043; [2]中国科学院半导体研究所,内蒙古通辽028043; |
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| 基金项目： | 国家自然科学基金项目（项目编号：11074246）. |
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| 摘 要： | 在对InAs单量子点施加流体静压的实验中,使用了带有压电陶瓷的连续加压装置,在低温连续施加流体静压的情况下,可以调节量子点单激子能量兰移约320meV.在对不同流体静压下单激子发光的二阶关联函数测量之后,证明流体静压并不影响单激子发光的单光子特性.同时通过流体静压,可以实现量子点双激子态由反束缚态到束缚态的转变,并且给出了这一过程的偏振分辨光谱图.最后观察到单量子点精细结构劈裂随流体静压的增加而增加,而且精细结构劈裂的增加量可以达到约150μeV.
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| 关 键 词： | 单量子点 流体静压 双激子束缚能 精细结构劈裂 |
On Situ Tuning Biexciton Antibinding-binding Transition and Fine-structure Splitting Through Hydrostatic Pressure in Single InAs Quantum Dots |
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| Institution: | SUN Bing-xi ,WU Xue-fei, DOU Xiu-ming, DING Kun ,SUN Bao-quan ( 1 College of Physics and Electronic Information, Inner Mongolia University for Nationalities, Tongliao Inner Mongolia,028043 ;2 Institute of Semiconductors, Chinese Academy of Sciences ; China) |
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| Abstract: | Exciton and biexciton emission energies as well as excitonic fine-structure splitting（FSS） in single InAs/GaAs quantum dots （QDs） have been continuously tuned using hydrostaticpressure up to 4.4 GPa. The blue shift of excitonic emission and the increase of FSS are 320 meV and 150 μeV, respectively, which are significantly greater than those that could beachieved by previously reported techniques. The biexciton binding energy linearly increases with increasing pressure and tends to be sublinearat high pressure. |
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| Keywords: | single quantum dots hydrostatic pressure biexciton binding energy fine-structure splitting |
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