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铝胁迫下大豆根尖细胞铝的微区分布与耐铝性分析
引用本文:俞慧娜,刘鹏,徐根娣,蔡妙珍.铝胁迫下大豆根尖细胞铝的微区分布与耐铝性分析[J].作物学报,2009,35(4):695-703.
作者姓名:俞慧娜  刘鹏  徐根娣  蔡妙珍
作者单位:浙江师范大学植物学实验室,浙江金华321004
基金项目:国家科技攻关计划,国家自然科学基金,浙江省自然科学基金 
摘    要:以浙春3号为实验材料, 利用透射电镜(TEM: Transmission Electron Microscope)-X-射线能谱(EDS: Energy Dispersive X-ray), 调查铝胁迫下大豆根尖铝的微区分布及耐铝性。结果表明,Al3+胁迫导致根尖细胞细胞壁不规则加厚, 线粒体数量增多, 核膜膨胀, 液泡中存在较多的电子致密沉淀物。90 mg L-1 Al3+处理的根尖细胞内含物完全降解消失, 仅剩细胞壁。10 mg L-1 Al3+处理的线粒体、细胞壁和液泡电子致密沉淀物中均检测到Al;随着Al3+处理浓度的增大, 各细胞器中Al的质量和原子数百分比逐渐增大。线粒体在60 和90 mg L-1Al3+处理下, 液泡电子致密沉淀物在90 mg L-1Al3+处理下,均未被检测出Al。在60 mg L-1Al3+处理下唯一一次在细胞核中检测到Al。Al3+抑制了根系生长, 根系细胞中细胞壁的Al3+含量受影响最明显。P/Al在细胞壁和线粒体中的相对原子数随Al3+浓度的增大而下降。研究结果表明X–射线能谱对铝在亚显微结构上的定位是一种快速、有效的方法。铝最先积累在细胞壁上, 随Al3+处理浓度增大逐渐积累于部分细胞器和细胞核中, 且含量在细胞中的分布亦由外向里呈递减趁势。

关 键 词:铝胁迫  大豆  根类细胞  透射电镜-X-射线能谱分析  根系生长
收稿时间:2008-06-07

Distribution of Al3+ in Subcellular Structure of Root Tips Cells and Aluminum Tolerance in Soybean
YU Hui-Na,LIU Peng,XU Gen-Di,CAI Miao-Zhen.Distribution of Al3+ in Subcellular Structure of Root Tips Cells and Aluminum Tolerance in Soybean[J].Acta Agronomica Sinica,2009,35(4):695-703.
Authors:YU Hui-Na  LIU Peng  XU Gen-Di  CAI Miao-Zhen
Institution:Key laboratory of Botany,Zhejiang Normal University,Jinhua321004,China
Abstract:Aluminum(Al) toxicity is a major limiting factor for yield and quality in crop production in acid soil. Micromolar concentrations of Al3+ may inhibit root elongation and consequently influence water and nutrient uptake, resulting in poor plant growth. The microanalysis of the elements was conducted on Zhechun 3 by using Transmission Electron Microscope (TEM) and Energy Dispersive X-ray (EDS) to examine the distribution of Al3+ in root tips and Al resistance of soybean. We found that Al3+ stresses resulted in irregularly thickened cell wall, increased number of mitochondria, expanded nuclear membrane, and densified precipitates of vacuole. Under the highest Al3+ concentration, the mitochondria and other organelles disappeared but cell wall. We detected Al in cell wall, mitochondria and electron-dense precipitates of vacuole of root tip cell under the 10 mg L-1Al3+ stresses by EDS. With the increase of external Al3+ concentration treated, the weight and atomic percentage of Al in the organelles increased. The Al3+ was found in nuclei when the external Al3+ was over 60 mg L-1. And there was no Al3+ in mitochondrion under 60 mg L-1 and 90 mg L-1Al3+ treatments and electron-dense precipitates of vacuole under the 90 mg L-1 Al3+ stresses. The 14 days Al3+ stresses significantly inhibited the growth of root system. The content of Al3+ in cell wall was most significantly impacted by the external Al3+ concentration. The atomic number of P / Al in cell wall and mitochondria decreased with increased Al3+ content. EDS can be used to determine the subcellular location of Al3+. As the treatment concentrations of Al3+ increased, Al3+ primarily accumulated in the cell wall, gradually gathered in part of the organelles and nuclei. The Al3+ concentrations also decreased from out layer to insider in the cell.
Keywords:Al3+ stresses  Soybean  Root tip cell  Transmission Electron Microscope-Energy Dispersive X-ray Analysis  Root growth
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