首页 | 本学科首页   官方微博 | 高级检索  
     检索      

七子花愈伤组织诱导初探
引用本文:刘鹏,徐根娣,张杰.七子花愈伤组织诱导初探[J].北京林业大学学报,2001,23(6):63-65.
作者姓名:刘鹏  徐根娣  张杰
作者单位:浙江师范大学生命与环境科学学院
基金项目:浙江省自然科学基金 ;399277;
摘    要:对七子花愈伤组织的培养途径作了初步的探索,研究了以七子花的越冬芽及嫩叶诱导的愈伤组织、无菌短枝扦插和叶柄培养3条组织培养的途径来进行的七子花种质资源保护.结果表明:作为外植体,栽培的七子花叶片较野生的七子花越冬芽好;以MS+2,4-D2+ZT2培养基最利于幼叶的愈伤组织诱导;短枝无菌扦插培养的存活率高于叶柄培养.比较和分析了各条途径的优点及存在的问题,并对七子花的组织培养作了新的展望.

关 键 词:七子花  组织培养  愈伤组织  种质资源保护
修稿时间:2001年4月15日

Preliminary studies on callus inducement of Heptacodium miconioides Rehd
Liu Peng, Xu Gendi, Zhang Jie.College of Life and Environment Science,Zhejiang Normal Univ.,P.R.China..Preliminary studies on callus inducement of Heptacodium miconioides Rehd[J].Journal of Beijing Forestry University,2001,23(6):63-65.
Authors:Liu Peng  Xu Gendi  Zhang JieCollege of Life and Environment Science  Zhejiang Normal Univ    PRChina
Institution:Liu Peng, Xu Gendi, Zhang Jie.College of Life and Environment Science,Zhejiang Normal Univ.,321004,P.R.China.
Abstract:The avenues of the callus tissue culture of \%Heptacodium miconioides\% Rehd. were preliminarily explored in this paper. Three relevant ways which could be used in the protection of the germplasm resource of \%Heptacodium miconioides\% Rehd.were studied (inducing callus with overwintering buds and tender leaves, bacteria\|free brachyblast cutting and leafstalk culture). The result showed that tender leaves of cultured \%Heptacodium miconioides\% were better than overwintering buds of wild \%Heptacodium miconioides\% as explants of callus;MS+2,4\|D2+ZT2 culture medium was the most beneficial medium to callus inducement of tender leaves; survival rate of bacteria\|free brachyblast cutting culture was higher than that of leafstalk culture.The advantages and disadvantages of each way were analyzed. This study showed the great potentiality of the tissue culture of \%Heptacodium miconioides\% Rehd.
Keywords:Heptacodium miconioides  Rehd      tissue culture  callus  protection of germ plasm resource
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号