SILICON MITIGATES ULTRAVIOLET-B RADIATION STRESS ON SOYBEAN BY ENHANCING CHLOROPHYLL AND PHOTOSYNTHESIS AND REDUCING TRANSPIRATION

The aim of this study was to investigate the potential of silicon (Si) for alleviating Ultraviolet-B (UV-B) radiation stress based on changes in biomass, physiological attributes and photosynthetic characteristics of two soybean (Glycine max L.) cultivars, Kenjiandou 43 (‘K 43’) and Zhonghuang 35 (‘ZH 35’). The cultivars were raised with and without Si in the greenhouse, and then subjected to ambient, ambient + 2.7 kJ m^?2d^?1and ambient + 5.4 kJ m^?2d^?1of UV-B radiation. Depending on cultivar, plants suffered severe growth limitations under UV-B radiation, but the application of Si alleviated the adverse effects on growth and development by increasing the stem length, net photosynthetic rate (P_N) and leaf chlorophyll content. Concurrently, it decreased the stomatal conductance (Sc) and intercellular carbon dioxide (CO₂) concentration (Ci). In response to the UV-B radiation stress, the antioxidant enzyme activities of superoxide dismutase (SOD) increased by 41.2–72.7%, peroxidases (POD) by 49.5–85.7%, malodialdehyde (MDA) by 6.7–20.4% and soluble protein by 4.2–7.6%. The overall results indicated that media treatment with Si might improve soybean growth under elevated UV-B radiation through positive changes in biomass and some physiological attributes that were dependent on cultivar.