氮化镓(GaN)纳米材料的制备

通过直流电弧等离子体方法制备了氮化镓纳米晶,并研究了制备的样品的基本特性。使用N2和NH3的混合气体进行反应,并对样品进行了电子显微镜扫描(SEM),X射线衍射(XRD)和Raman散射分析。试验发现,样品为纤锌矿结构,平均大小为50nm左右,晶格常数为a=3.186,c=5.174。

Preparation of GaN Nano-materials

Gallium nitride is a direct broad band gap semiconductor,which has very wide application foreground.Here the Gallium nitride nanocrystalline is synthesized,by dc arc plasma method and studying the crystal growth process,structure and optical properties of the gallium nitride is synthesized.In the experiment,the mixture of N_2 and NH_3 is used as the reaction gas,then the sample by the methods of scanning electron microscope (SEM),X-ray diffraction (XRD) and Raman scanning is analyzed.It is found the structure of the sample is wurtzite structure with the size of about 50nm and the lattice constant is a=3.186,c=5.174.