电磁波场中木材的介质损耗与电学性质

一、前言 湿木材是半导体。木材的损耗机构为电导和极化弛豫(磁损耗可略去)。因此,在讨论电磁波场中木材的介质损耗时,既要讨沦由电导所生产的焦耳楞次热,也要讨论由极化弛豫所产生的能量损耗。 木材是类晶体材料,它的导电性质和介电性质的表达将不同于各向同性物质,要用电导率张量和介电张量。因极化弛豫介质损耗的存在,介电张量是复张量。而且介电张量是电磁波场频率的函数,即存在色散。     

2-2型多层BaTiO_3/CoFe_2O_4磁电复合薄膜的制备及其性能表征

采用流延法制备了2-2型多层钛酸钡/铁酸钴(BaTiO_3/CoFe_2O_4)复合薄膜材料,并通过X射线衍射仪、扫描电镜、振动样品磁强计、铁电分析仪等对试样结构与性能进行了分析和表征。制备的复合薄膜材料相界清晰,颗粒大小均匀,形貌为类球形,随处理温度的升高晶粒尺寸有所增大。磁滞回线测试结果表明,当铁酸钴相比例增加时,复合材料磁性增强,在钛酸钡/铁酸钴的膜层厚度比为1∶2时,复合材料的铁磁性能值和铁电性能值都取得试样中的最大值:饱和磁化强度Ms为63.34emu/cm~3,剩余磁化强度Mr为32.04emu/cm~3,矫顽力Hc为1170.88Oe,最大剩磁比为0.51;矫顽电场强度Ec为39.78kV/cm,剩余极化强度Pr为109.04μC/cm~2,多层复合材料薄膜具有良好的铁电/铁磁性能。     

一维梯度铁纳米线的制备与表征

用氧化铝模板法和电化学沉积法控制合成了一维梯度直径铁纳米线.通过匀速减小氧化铝模板二次氧化的氧化电压,获得了具有一维梯度孔径的氧化铝模板,在此模板中利用电化学沉积法生长了具有一维梯度直径的铁纳米线.用扫描电镜和透射电镜对梯度直径铁纳米线进行表征,结果显示:铁纳米线呈细长锥形结构;沿长度方向,铁纳米线的直径具有梯直径变化,直径变化范围为12~31 nm.     

黄土丘陵区3种典型人工阔叶纯林枯落物分解对土壤性质极化的影响

【目的】探讨黄土丘陵区3种典型人工阔叶纯林枯落物分解对土壤性质极化的影响,为防治森林土壤退化和连栽障碍提供科学依据。【方法】在位于黄土高原中部半湿润黄土丘陵区的陕西黄陵县,选择刺槐、辽东栎和小叶杨3种典型人工阔叶纯林为研究对象,采集林地腐殖质层土壤和枯落物（当年枯落叶及细根）,分别设“土壤+枯落叶”、“土壤+根系”、“土壤＋枯落叶+根系”和土壤不与任何枯落物混合（对照）4种处理方式,进行室内混合培养试验,共培养120 d,分析枯落物分解对土壤生物学和化学性质极化的影响。【结果】1）在刺槐林地,枯落叶分解主要引起土壤pH值、过氧化氢酶活性和微生物数量负向极化,根系分解主要引起pH值、速效磷含量负向极化;但就土壤总体性质而言,枯落叶和根系均引起了正向极化,且根系影响大于枯落叶,二者混合分解对土壤的影响总体表现为相互抑制。2）在辽东栎林地,枯落叶分解主要引起蔗糖酶、多酚氧化酶、过氧化氢酶活性及速效磷、速效钾含量负向极化,根系分解主要引起过氧化氢酶活性和速效钾含量负向极化;但就土壤总体性质而言,枯落叶分解引起了负向极化,而根系分解引起了较弱的正向极化,且二者混合分解对土壤的影响总体表现为较弱抑制作用。3）在小叶杨林地,枯落叶分解主要引起蛋白酶、过氧化氢酶活性及速效磷含量负向极化,根系分解主要引起蛋白酶、过氧化氢酶活性及微生物数量和速效磷含量负向极化;就土壤总体性质而言,枯落叶和根系均引起了负向极化,且根系影响较明显,二者混合分解对土壤的影响总体表现为相互促进。【结论】从枯落物分解对土壤性质极化影响的总体结果来看,刺槐比较适宜在该地区一定时间内继续连栽,其次为辽东栎,而小叶杨不适宜。     

黄土残塬沟壑区林粮间作树种枯落叶对连作麦田土壤极化的防治效应

连作引起的农田土壤性质极化是导致土壤退化和连作障碍的重要原因之一,防治的途径除了进行施加有机肥外,引入种间关系协调的其他树种形成林粮间作复合系统是重要的生态举措。作者通过野外采集黄土残塬沟壑区典型麦田耕层土壤、麦秸和不同树种当年枯落叶后进行室内混合培养试验的方法,对当地连作麦田土壤性质的极化趋势和引入不同林粮间作树种后的种间土壤关系进行了研究。结果表明,①小麦连作会引起土壤有效锌和有机质含量的持续增加和土壤多种酶活性不断提高的正向极化,但同时会引起土壤向贫养化发展。②引入苹果、核桃等8个树种进行林粮间作后,其枯落叶分解均可以防止连作麦田土壤碱解氮不断减少这一负向极化;除桃树、核桃树种外,引入其他树种可以防止土壤脲酶活性不断降低这一负向极化;除杏树外,引入其他树种可以防止土壤速效P含量不断减少这一负向极化;除桑树外,引入其他树种可以防止土壤有效铁含量连续减少这一负向极化。③从枯落叶对麦田土壤的影响角度考虑,最适合进行林粮间作的树种是桃树、核桃,其次是枣树、桑树,较不适宜进林粮间作的树种是柿树、苹果、花椒、杏树。     

Pt／PZT／Pt结构铁电场效应晶体管性能研究

目的 研究金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的p沟道铁电场效应晶体管的性能.方法 制备金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的p沟道铁电场效应晶体管并对其性能进行测量分析.结果 具有顺时针的Id-Vg滞回曲线的p沟道PZT铁电场效应晶体管能实现极化存储性能,并且在-5V到+5V的Vg电压下从Id-Vg滞回曲线中都得到了1V的存储窗口.存储窗口随-Vg的增大而增大.结论 MFMIS结构的p沟道PZT铁电场效应晶体管适合在大规模、高密度、高速度铁电存储器上使用.     

含铁材料修复砷污染土壤的研究进展

介绍了含铁材料修复砷污染土壤的研究进展,对土壤中砷的不同形态以及含铁材料固砷的效果、机理及其影响因素进行了分析.分析表明,含铁材料治理砷污染土壤具有较好的效果,且含铁材料固化砷的效果顺序大致为三价铁＞二价铁＞铁的氢氧化物、铁的氧化物、聚合硫酸铁;固砷的机理主要是铁砷沉淀、离子交换和吸附等作用;影响含铁材料固砷效果的因素主要有含铁材料的种类及添加量、土壤pH和氧化还原电位以及离子竞争等作用.     

操作条件对吸附分离辅助电渗透脱水特性的影响

[目的]考察不同操作条件对吸附分离辅助电渗透脱水特性的影响。[方法]以经重力浓缩、絮凝和离心脱水后的污泥为试材,研究初始电压梯度对电渗透脱水效果、对电渗透脱水能耗的影响以及对电渗透脱水最大电流密度的影响,探讨电渗透脱水时间的优化方法。[结果]在12～24 V/cm电压梯度作用下,脱水10 min时,污泥含水率由79.9%脱水至64.7%～52.5%,同时污泥电渗透脱水能耗随脱水时间呈指数型增长。通过优化得到,在污泥电渗透脱水电压梯度为16 V/cm,脱水8 min时,污泥含水率从79.9%降到61.8%,脱水能耗为0.076 kWh/kg.H2O。[结论]增加电压梯度有利于污泥电渗透脱水,但电压梯度越高脱水能耗及极板所承受的电流密度越大。综合考虑,电压梯度应选择16 V/cm,污泥电渗透脱水时间以8 min为最佳。     

磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究

采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。     

梯度硬质合金齿渗碳工艺对其梯度层厚度的影响

提出了一种新颖的制备梯度硬质合金材料的方法,其优点是将不含η相、钴均匀分布的硬质合金基体在一定的气氛中进行渗碳处理,从而在其表面得到一定厚度、外硬内韧的梯度硬质合金材料,其心部结构均匀且不存在η相,不降低硬质合金原材料的性能,同时其制备方法简单,有利于工业化生产和批量应用。研究了渗碳温度、渗碳时间和渗碳气氛对硬质合金齿梯度层厚度的影响。结果表明,随着梯度处理温度的升高,硬质合金齿梯度层厚度就越大;当硬质合金齿梯度处理时间短时,硬质合金齿不会形成梯度层,随着时间的增加,梯度层厚度也会增加;随着硬质合金齿梯度处理甲烷流量的增加,梯度层厚度也会随之增加。     

Mechanical writing of ferroelectric polarization

Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.     

Domain dynamics during ferroelectric switching

The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic electrode (La(0.7)Sr(0.3)MnO(3)). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.     

Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO2/Pb(Zr0.52Ti0.48)O3 Heterostructures

A ferroelectric field effect in epitaxial thin film SrCuO(2)/Pb(Zr(0.52)Ti(0.48))O(3) heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO(2) layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr(0.52)Ti(0.48))O(3) layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO(2) and Pb(Zr(0.52)Ti(0.48))O(3). This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO(2).     

Polarization-modulated smectic liquid crystal phases

Any polar-ordered material with a spatially uniform polarization field is internally frustrated: The symmetry-required local preference for polarization is to be nonuniform, i.e., to be locally bouquet-like or "splayed." However, it is impossible to achieve splay of a preferred sign everywhere in space unless appropriate defects are introduced into the field. Typically, in materials like ferroelectric crystals or liquid crystals, such defects are not thermally stable, so that the local preference is globally frustrated and the polarization field remains uniform. Here, we report a class of fluid polar smectic liquid crystals in which local splay prevails in the form of periodic supermolecular-scale polarization modulation stripes coupled to layer undulation waves. The polar domains are locally chiral, and organized into patterns of alternating handedness and polarity. The fluid-layer undulations enable an extraordinary menagerie of filament and planar structures that identify such phases.     

Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates

The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-access memories requires films with spontaneous polarization normal to the plane of growth. Epitaxially twinned a axis-oriented La-substituted Bi4Ti3O12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO3 as bottom electrodes. Even though the (118) orientation competes with the (100) orientation, epitaxial films with almost pure (100) orientation were grown using very thin, strained SrRuO3 electrode layers and kinetic growth conditions, including high growth rates and high oxygen background pressures to facilitate oxygen incorporation into the growing film. Films with the a-axis orientation and having their polarization entirely along the direction normal to the film plane can achieve a remanent polarization of 32 microcoulombs per square centimeter.     

Epitaxial BiFeO3 multiferroic thin film heterostructures

Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.     

Ferroelectric columnar liquid crystal featuring confined polar groups within core-shell architecture

Ferroelectric liquid crystals are materials that have a remnant and electrically invertible polar order. Columnar liquid crystals with a ferroelectric nature have potential use in ultrahigh-density memory devices, if electrical polarization occurs along the columnar axis. However, columnar liquid crystals having an axial nonzero polarization at zero electric field and its electrical invertibility have not been demonstrated. Here, we report a ferroelectric response for a columnar liquid crystal adopting a core-shell architecture that accommodates an array of polar cyano groups confined by a hydrogen-bonded amide network with an optimal strength. Under an applied electric field, both columns and core cyano groups align unidirectionally, thereby developing an extremely large macroscopic remnant polarization.     

Spontaneous ferroelectric order in a bent-core smectic liquid crystal of fluid orthorhombic layers

Macroscopic polarization density, characteristic of ferroelectric phases, is stabilized by dipolar intermolecular interactions. These are weakened as materials become more fluid and of higher symmetry, limiting ferroelectricity to crystals and to smectic liquid crystal stackings of fluid layers. We report the SmAP(F), the smectic of fluid polar orthorhombic layers that order into a three-dimensional ferroelectric state, the highest-symmetry layered ferroelectric possible and the highest-symmetry ferroelectric material found to date. Its bent-core molecular design employs a single flexible tail that stabilizes layers with untilted molecules and in-plane polar ordering, evident in monolayer-thick freely suspended films. Electro-optic response reveals the three-dimensional orthorhombic ferroelectric structure, stabilized by silane molecular terminations that promote parallel alignment of the molecular dipoles in adjacent layers.     

Giant electrostriction and relaxor ferroelectric behavior in electron-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

An exceptionally high electrostrictive response ( approximately 4 percent) was observed in electron-irradiated poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer. The material exhibits typical relaxor ferroelectric behavior, suggesting that the electron irradiation breaks up the coherent polarization domain (all-trans chains) in normal ferroelectric P(VDF-TrFE) copolymer into nanopolar regions (nanometer-size, all-trans chains interrupted by trans and gauche bonds) that transform the material into a relaxor ferroelectric. The expanding and contracting of these polar regions under external fields, coupled with a large difference in the lattice strain between the polar and nonpolar phases, generate an ultrahigh strain response.     

Epitaxial cuprate superconductor/ferroelectric heterostructures

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.