The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes

REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 x 10(8) to 1 x 10(12) cm-2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.     

Physics and device applications of optical microcavities

Optical microcavities are resonators that have at least one dimension on the order of a single optical wavelength. These structures enable one to control the optical emission properties of materials placed inside them. They can, for example, modify the spatial distribution of radiation power, change the spectral width of the emitted light, and enhance or suppress the spontaneous emission rate. In addition to being attractive for studying the fundamental physics of the interaction between materials and vacuum field fluctuations, optical microcavities hold technological promise for constructing novel kinds of light-emitting devices. One of their most dramatic potential features is thresholdless lasing. In this way and others, controlled spontaneous emission is expected to play a key role in a new generation of optical devices.     

Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices

We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene layers by using high-density, vertically aligned zinc oxide nanowalls as an intermediate layer. The nitride thin films on graphene layers show excellent optical characteristics at room temperature, such as stimulated emission. As one of the examples for device applications, LEDs that emit strong electroluminescence emission under room illumination were fabricated. Furthermore, the layered structure of a graphene substrate made it possible to easily transfer GaN thin films and GaN-based LEDs onto foreign substrates such as glass, metal, or plastic.     

Micrometer- and nanometer-sized polymeric light-emitting diodes

A method for the fabrication of micrometer-and submicrometer-sized polymeric light-emitting diodes is presented. Such diodes have a variety of applications. Light sources of dimensions around 100 nanometers are required for subwavelength, near-field optical microscopy. Another possible application is patterning on the micrometer and nanometer scale. The diodes have been made in the form of a sandwich structure, with the conductive polymer poly(3,4-ethylene-dioxythiophene) polymerized in the pores of commercially available microfiltration membranes defining the hole-injecting contacts, poly[3-(4-octylphenyl)-2,2;-bithiophene] as the light-emitting layer, and a thin film of calcium-aluminum as the electron injector.     

Directionally controlled fluorescence emission in butterflies

Recently developed, high-efficiency, light-emitting diodes use two-dimensional photonic crystals to enhance the extraction of otherwise internally trapped light and multilayer reflectors to control the direction of light emission. This work describes the characterization of a naturally evolved light-extraction system on the wing scales of a small group of Papilio butterflies. The efficient extraction of fluorescence from these scales is facilitated by a two-dimensional photonic crystal slab that uses a multilayer to help control emission direction. Its light-extraction function is analogous to that of the light-emitting diode.     

Luminescence Enhancement by the Introduction of Disorder into Poly(p-phenylene vinylene)

A method is described for increasing luminescence in poly(p-phenylene vinylene) (PPV) light-emitting diodes. Cis linkages were engineered into the PPV chain. These linkages interrupt conjugation and interfere with the packing of the polymer chains, which results in the formation of amorphous PPV. Large-area electroluminescent devices were prepared from this polymer. Devices made of an aluminum electrode, PPV as the luminescent layer, and an electron-transporting layer have internal quantum efficiencies of 2 percent, a turn-on voltage of 20 volts, and can carry current densities of 2000 milliamperes per square centimeter. The current density is at least an order of magnitude higher than previously obtained.     

Quantum cascade surface-emitting photonic crystal laser

We combine photonic and electronic band structure engineering to create a surface-emitting quantum cascade microcavity laser. A high-index contrast two-dimensional photonic crystal is used to form a micro-resonator that simultaneously provides feedback for laser action and diffracts light vertically from the surface of the semiconductor surface. A top metallic contact allows electrical current injection and provides vertical optical confinement through a bound surface plasmon wave. The miniaturization and tailorable emission properties of this design are potentially important for sensing applications, while electrical pumping can allow new studies of photonic crystal and surface plasmon structures in nonlinear and near-field optics.     

Förster energy transfer in an optical microcavity

By studying the transfer of excitation energy between dye molecules confined within an optical microcavity, we demonstrate experimentally that F?rster energy transfer is influenced by the local photonic mode density. Locating donor and acceptor molecules at well-defined positions allows the transfer rate to be determined as a function of both mutual separation and cavity length. The results show that the F?rster transfer rate depends linearly on the donor emission rate and hence photonic mode density, providing the potential to control energy transfer by modification of the optical environment.     

Efficient near-infrared polymer nanocrystal light-emitting diodes

Conjugated polymers and indium arsenide-based nanocrystals were used to create near-infrared plastic light-emitting diodes. Emission was tunable from 1 to 1.3 micrometers--a range that effectively covers the short-wavelength telecommunications band--by means of the quantum confinement effects in the nanocrystals. The external efficiency value (photons out divided by electrons in) is approximately 0.5% (that is, >1% internal) and is mainly limited by device architecture. The near-infrared emission did not overlap the charge-induced absorption bands of the polymer.     

Multilayer white light-emitting organic electroluminescent device

Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Here, the fabrication of a white light-emitting organic electroluminescent device made from vacuum-deposited organic thin films is reported. In this device, three emitter layers with different carrier transport properties, each emitting blue, green, or red light, are used to generate white light. Bright white light, over 2000 candelas per square meter, nearly as bright as a fluorescent lamp, was successfully obtained at low drive voltages such as 15 to 16 volts. The applications of such a device include paper-thin light sources, which are particularly useful for places that require lightweight illumination devices, such as in aircraft and space shuttles. Other uses are a backlight for liquid crystal display as well as full color displays, achieved by combining the emitters with micropatterned color filters.     

Bose-Einstein condensation of microcavity polaritons in a trap

We have created polaritons in a harmonic potential trap analogous to atoms in optical traps. The trap can be loaded by creating polaritons 50 micrometers from its center that are allowed to drift into the trap. When the density of polaritons exceeds a critical threshold, we observe a number of signatures of Bose-Einstein condensation: spectral and spatial narrowing, a peak at zero momentum in the momentum distribution, first-order coherence, and spontaneous linear polarization of the light emission. The polaritons, which are eigenstates of the light-matter system in a microcavity, remain in the strong coupling regime while going through this dynamical phase transition.     

Label-free, single-molecule detection with optical microcavities

Current single-molecule detection techniques require labeling the target molecule. We report a highly specific and sensitive optical sensor based on an ultrahigh quality (Q) factor (Q > 10(8)) whispering-gallery microcavity. The silica surface is functionalized to bind the target molecule; binding is detected by a resonant wavelength shift. Single-molecule detection is confirmed by observation of single-molecule binding events that shift the resonant frequency, as well as by the statistics for these shifts over many binding events. These shifts result from a thermo-optic mechanism. Additionally, label-free, single-molecule detection of interleukin-2 was demonstrated in serum. These experiments demonstrate a dynamic range of 10(12) in concentration, establishing the microcavity as a sensitive and versatile detector.     

Design and application of electron-transporting organic materials

Operating lifetime is the main problem that complicates the use of polymeric light-emitting diodes (LEDs). A class of electron transport (ET) polymers [poly(aryl acrylate) and poly(aryl ether)s] is reported in which moieties with high electron affinities are covalently attached to stable polymer backbones. Devices based on poly(p-phenylenevinylene) (PPV) prepared with these materials exhibited a 30-fold improvement in stability and, in one case, dramatically lower (10 volts versus about 30 volts) operating voltage relative to those having conventional ET layers. The current-carrying capacity of indium tin oxide-PPV-polymeric ET layer-aluminum LEDs was also increased by a factor of 30. These improvements lead to an enhancement in power efficiency of nearly an order of magnitude. Choosing polymers with high glass transition temperatures increases device lifetime.     

Video-rate far-field optical nanoscopy dissects synaptic vesicle movement

We present video-rate (28 frames per second) far-field optical imaging with a focal spot size of 62 nanometers in living cells. Fluorescently labeled synaptic vesicles inside the axons of cultured neurons were recorded with stimulated emission depletion (STED) microscopy in a 2.5-micrometer by 1.8-micrometer field of view. By reducing the cross-sectional area of the focal spot by about a factor of 18 below the diffraction limit (260 nanometers), STED allowed us to map and describe the vesicle mobility within the highly confined space of synaptic boutons. Although restricted within boutons, the vesicle movement was substantially faster in nonbouton areas, consistent with the observation that a sizable vesicle pool continuously transits through the axons. Our study demonstrates the emerging ability of optical microscopy to investigate intracellular physiological processes on the nanoscale in real time.     

Visible Light from Semiconductors: Luminescence from p-n junctions and potential uses of solid state light sources are discussed

Electroluminescence from semiconductor diode light sources can occur as a result of the application of a direct current at a low voltage to a suitably doped crystal containing a p-n junction. In recent years, it has become apparent that in some materials the efficiency of conversion of electric energy to visible light can be appreciably high. Since light-emitting diodes are compatible with the present electronic circuitry, they have many potential applications.     

Chlorinated indium tin oxide electrodes with high work function for organic device compatibility

In organic light-emitting diodes (OLEDs), a stack of multiple organic layers facilitates charge flow from the low work function [~4.7 electron volts (eV)] of the transparent electrode (tin-doped indium oxide, ITO) to the deep energy levels (~6 eV) of the active light-emitting organic materials. We demonstrate a chlorinated ITO transparent electrode with a work function of >6.1 eV that provides a direct match to the energy levels of the active light-emitting materials in state-of-the art OLEDs. A highly simplified green OLED with a maximum external quantum efficiency (EQE) of 54% and power efficiency of 230 lumens per watt using outcoupling enhancement was demonstrated, as were EQE of 50% and power efficiency of 110 lumens per watt at 10,000 candelas per square meter.     

Quasars, blazars, and gamma rays

Before the launch of the Compton Gamma Ray Observatory (CGRO), the only source of >100-megaelectron volt (MeV) gamma radiation known outside our galaxy was the quasar 3C 273. After less than a year of observing, 13 other extragalactic sources have been discovered with the Energetic Gamma Ray Experiment Telescope (EGRET) on CGRO, and it is expected that many more will be found before the full sky survey is complete. All 14 sources show evidence of blazar properties at other wavelengths; these properties include high optical polarization, extreme optical variability, flat-spectrum radio emission associated with a compact core, and apparent superluminal motion. Such properties are thought to be produced by those few, rare extragalactic radio galaxies and quasars that are favorably aligned to permit us to look almost directly down a relativistically outflowing jet of matter expelled from a supermassive black hole. Although the origin of the gamma rays from radio jets is a subject of much controversy, the gamma-ray window probed by CGRO is providing a wealth of knowledge about the central engines of active galactic nuclei and the most energetic processes occurring in nature.     

High-luminosity blue and blue-green gallium nitride light-emitting diodes

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.     

有机光电材料与有机光电器件

近年来,有机光电子学在基础研究和应用方面取得了突飞猛进的发展,已经成为一个较为成熟的跨学科新兴领域。主要介绍有机光电材料的分子结构、导电与发光机理、有机光电器件的分类与工作原理以及有机光电材料在光电器件方面的应用,包括有机发光二极管和发光电化学池、有机太阳能电池、有机场效应晶体管、有机生物化学传感器、有机光泵浦激光器以及有机非线性光学材料等。     

Forming electrical networks in three dimensions by self-assembly

Self-assembly of millimeter-scale polyhedra, with surfaces patterned with solder dots, wires, and light-emitting diodes, generated electrically functional, three-dimensional networks. The patterns of dots and wires controlled the structure of the networks formed; both parallel and serial connections were generated.