Dislocation avalanches, strain bursts, and the problem of plastic forming at the micrometer scale

Under stress, many crystalline materials exhibit irreversible plastic deformation caused by the motion of lattice dislocations. In plastically deformed microcrystals, internal dislocation avalanches lead to jumps in the stress-strain curves (strain bursts), whereas in macroscopic samples plasticity appears as a smooth process. By combining three-dimensional simulations of the dynamics of interacting dislocations with statistical analysis of the corresponding deformation behavior, we determined the distribution of strain changes during dislocation avalanches and established its dependence on microcrystal size. Our results suggest that for sample dimensions on the micrometer and submicrometer scale, large strain fluctuations may make it difficult to control the resulting shape in a plastic-forming process.     

Visualization of dislocation dynamics in colloidal crystals

The dominant mechanism for creating large irreversible strain in atomic crystals is the motion of dislocations, a class of line defects in the crystalline lattice. Here we show that the motion of dislocations can also be observed in strained colloidal crystals, allowing detailed investigation of their topology and propagation. We describe a laser diffraction microscopy setup used to study the growth and structure of misfit dislocations in colloidal crystalline films. Complementary microscopic information at the single-particle level is obtained with a laser scanning confocal microscope. The combination of these two techniques enables us to study dislocations over a range of length scales, allowing us to determine important parameters of misfit dislocations such as critical film thickness, dislocation density, Burgers vector, and lattice resistance to dislocation motion. We identify the observed dislocations as Shockley partials that bound stacking faults of vanishing energy. Remarkably, we find that even on the scale of a few lattice vectors, the dislocation behavior is well described by the continuum approach commonly used to describe dislocations in atomic crystals.     

Real-space observation of helical spin order

Helical spin order in magnetic materials has been investigated only in reciprocal space. We visualized the helical spin order and dynamics in a metal silicide in real space by means of Lorentz electron microscopy. The real space of the helical spin order proves to be much richer than that expected from the averaged structure; it exhibits a variety of magnetic defects similar to atomic dislocations in the crystal lattice. The application of magnetic fields allows us to directly observe the deformation processes of the helical spin order accompanied by nucleation, movement, and annihilation of the magnetic defects.     

Observation of giant diffusivity along dislocation cores

Diffusion of atoms in a crystalline lattice is a thermally activated process that can be strongly accelerated by defects such as grain boundaries or dislocations. When carried by dislocations, this elemental mechanism is known as "pipe diffusion." Pipe diffusion has been used to explain abnormal diffusion, Cottrell atmospheres, and dislocation-precipitate interactions during creep, although this rests more on conjecture than on direct demonstration. The motion of dislocations between silicon nanoprecipitates in an aluminum thin film was recently observed and controlled via in situ transmission electron microscopy. We observed the pipe diffusion phenomenon and measured the diffusivity along a single dislocation line. It is found that dislocations accelerate the diffusion of impurities by almost three orders of magnitude as compared with bulk diffusion.     

Large-scale molecular dynamics simulations of dislocation intersection in copper

The results of massively parallel three-dimensional molecular dynamics simulations of the perpendicular intersection of extended dislocations in copper are reported. The intersection process, which involves three of the four possible 111 glide planes in the face-centered cubic lattice, begins with junction formation, followed by unzipping, partial dislocation bowing, cutting, and, finally, unit jog formation. The investigation provides insights into this complex atomistic process, which is currently not accessible to experimental investigation.     

Formation and subdivision of deformation structures during plastic deformation

During plastic deformation of metals and alloys, dislocations arrange in ordered patterns. How and when these self-organization processes take place have remained elusive, because in situ observations have not been feasible. We present an x-ray diffraction method that provided data on the dynamics of individual, deeply embedded dislocation structures. During tensile deformation of pure copper, dislocation-free regions were identified. They showed an unexpected intermittent dynamics, for example, appearing and disappearing with proceeding deformation and even displaying transient splitting behavior. Insight into these processes is relevant for an understanding of the strength and work-hardening of deformed materials.     

Grain boundary-mediated plasticity in nanocrystalline nickel

The plastic behavior of crystalline materials is mainly controlled by the nucleation and motion of lattice dislocations. We report in situ dynamic transmission electron microscope observations of nanocrystalline nickel films with an average grain size of about 10 nanometers, which show that grain boundary-mediated processes have become a prominent deformation mode. Additionally, trapped lattice dislocations are observed in individual grains following deformation. This change in the deformation mode arises from the grain size-dependent competition between the deformation controlled by nucleation and motion of dislocations and the deformation controlled by diffusion-assisted grain boundary processes.     

New technique for decorating dislocations in olivine

Oxidation of iron-rich olivine induced in the laboratory causes preferential precipitation on lattice dislocations. This simple dislocation decoration technique greatly reduces the cost and time involved in surveying the dislocation structures of deformed olivine crystals and opens the way to a more thorough understanding of the deformation of this important geologic material.     

Dislocation-driven nanowire growth and Eshelby twist

Hierarchical nanostructures of lead sulfide nanowires resembling pine trees were synthesized by chemical vapor deposition. Structural characterization revealed a screwlike dislocation in the nanowire trunks with helically rotating epitaxial branch nanowires. It is suggested that the screw component of an axial dislocation provides the self-perpetuating steps to enable one-dimensional crystal growth, in contrast to mechanisms that require metal catalysts. The rotating trunks and branches are the consequence of the Eshelby twist of screw dislocations with a dislocation Burgers vector along the 110 directions having an estimated magnitude of 6 +/- 2 angstroms for the screw component. The results confirm the Eshelby theory of dislocations, and the proposed nanowire growth mechanism could be general to many materials.     

Electrical wind force-driven and dislocation-templated amorphization in phase-change nanowires

Phase-change materials undergo rapid and reversible crystalline-to-amorphous structural transformation and are being used for nonvolatile memory devices. However, the transformation mechanism remains poorly understood. We have studied the effect of electrical pulses on the crystalline-to-amorphous phase change in a single-crystalline Ge(2)Sb(2)Te(5) (GST) nanowire memory device by in situ transmission electron microscopy. We show that electrical pulses produce dislocations in crystalline GST, which become mobile and glide in the direction of hole-carrier motion. The continuous increase in the density of dislocations moving unidirectionally in the material leads to dislocation jamming, which eventually induces the crystalline-to-amorphous phase change with a sharp interface spanning the entire nanowire cross section. The dislocation-templated amorphization explains the large on/off resistance ratio of the device.     

Ultrahigh strength in nanocrystalline materials under shock loading

Molecular dynamics simulations of nanocrystalline copper under shock loading show an unexpected ultrahigh strength behind the shock front, with values up to twice those at low pressure. Partial and perfect dislocations, twinning, and debris from dislocation interactions are found behind the shock front. Results are interpreted in terms of the pressure dependence of both deformation mechanisms active at these grain sizes, namely dislocation-based plasticity and grain boundary sliding. These simulations, together with new shock experiments on nanocrystalline nickel, raise the possibility of achieving ultrahard materials during and after shock loading.     

Dislocations in complex materials

Deformation of metals and alloys by dislocations gliding between well-separated slip planes is a well-understood process, but most crystal structures do not possess such simple geometric arrangements. Examples are the Laves phases, the most common class of intermetallic compounds and exist with ordered cubic, hexagonal, and rhombohedral structures. These compounds are usually brittle at low temperatures, and transformation from one structure to another is slow. On the basis of geometric and energetic considerations, a dislocation-based mechanism consisting of two shears in different directions on adjacent atomic planes has been used to explain both deformation and phase transformations in this class of materials. We report direct observations made by Z-contrast atomic resolution microscopy of stacking faults and dislocation cores in the Laves phase Cr2Hf. These results show that this complex dislocation scheme does indeed operate in this material. Knowledge gained of the dislocation core structure will enable improved understanding of deformation mechanisms and phase transformation kinetics in this and other complex structures.     

Visualizing individual nitrogen dopants in monolayer graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.     

High-resolution three-dimensional imaging of dislocations

Dislocations and their interactions govern the properties of many materials, ranging from work hardening in metals to device pathology in semiconductor laser diodes. However, conventional electron micrographs are simply two-dimensional projections of three-dimensional (3D) structures, and even stereo microscopy cannot reveal the true 3D complexity of defect structures. Here, we describe an electron tomographic method that yields 3D reconstructions of dislocation networks with a spatial resolution three orders of magnitude better than previous work. We illustrate the method's success with a study of dislocations in a GaN epilayer, where dislocation densities of 1010 per square centimeter are common.     

Dislocation mean free paths and strain hardening of crystals

Predicting the strain hardening properties of crystals constitutes a long-standing challenge for dislocation theory. The main difficulty resides in the integration of dislocation processes through a wide range of time and length scales, up to macroscopic dimensions. In the present multiscale approach, dislocation dynamics simulations are used to establish a dislocation-based continuum model incorporating discrete and intermittent aspects of plastic flow. This is performed through the modeling of a key quantity, the mean free path of dislocations. The model is then integrated at the scale of bulk crystals, which allows for the detailed reproduction of the complex deformation curves of face-centered cubic crystals. Because of its predictive ability, the proposed framework has a large potential for further applications.     

Anomalous spiral motion of steps near dislocations on silicon surfaces

We have used low-energy electron microscopy to measure step motion on Si(111) and Si(001) near dislocations during growth and sublimation. Steps on Si(111) exhibit the classic rotating Archimedean spiral motion, as predicted by Burton, Cabrera, and Frank. Steps on Si(001), however, move in a strikingly different manner. The strain-relieving anomalous behavior can be understood in detail by considering how the local step velocity is affected by the nonuniform strain field arising from the dislocation. We show how the dynamic step-flow pattern is related to the dislocation slip system.     

The role of collinear interaction in dislocation-induced hardening

We connected dislocation-based atomic-scale and continuum models of plasticity in crystalline solids through numerical simulations of dislocation intersections in face-centered cubic crystals. The results contradict the traditional assumption that strain hardening is governed by the formation of sessile junctions between dislocations. The interaction between two dislocations with collinear Burgers vectors gliding in intersecting slip planes was found to be by far the strongest of all reactions. Its properties were investigated and discussed using a multiscale approach.     

Hardening by annealing and softening by deformation in nanostructured metals

We observe that a nanostructured metal can be hardened by annealing and softened when subsequently deformed, which is in contrast to the typical behavior of a metal. Microstructural investigation points to an effect of the structural scale on fundamental mechanisms of dislocation-dislocation and dislocation-interface reactions, such that heat treatment reduces the generation and interaction of dislocations, leading to an increase in strength and a reduction in ductility. A subsequent deformation step may restore the dislocation structure and facilitate the yielding process when the metal is stressed. As a consequence, the strength decreases and the ductility increases. These observations suggest that for materials such as the nanostructured aluminum studied here, deformation should be used as an optimizing procedure instead of annealing.     

Electromechanical properties of graphene drumheads

We determined the electromechanical properties of a suspended graphene layer by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements, as well as computational simulations of the graphene-membrane mechanics and morphology. A graphene membrane was continuously deformed by controlling the competing interactions with a STM probe tip and the electric field from a back-gate electrode. The probe tip-induced deformation created a localized strain field in the graphene lattice. STS measurements on the deformed suspended graphene display an electronic spectrum completely different from that of graphene supported by a substrate. The spectrum indicates the formation of a spatially confined quantum dot, in agreement with recent predictions of confinement by strain-induced pseudomagnetic fields.     

Controlling factors for the brittle-to-ductile transition in tungsten single crystals

Materials performance in structural applications is often restricted by a transition from ductile response to brittle fracture with decreasing temperature. This transition is currently viewed as being controlled either by dislocation mobility or by the nucleation of dislocations. Fracture experiments on tungsten single crystals reported here provide evidence for the importance of dislocation nucleation for the fracture toughness in the semibrittle regime. However, it is shown that the transition itself, in general, is controlled by dislocation mobility rather than by nucleation.